METHODS AND DEVICES FOR FABRICATING AND ASSEMBLING PRINTABLE SEMICONDUCTOR ELEMENTS

• US 20090294803A1
• Filed: 06/02/2005
• Published: 12/03/2009
• Est. Priority Date: 06/04/2004
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Lee, Keon Jae, Nuzzo, Ralph G., Menard, Etienne, Zhu, Zhengtao, Sun, Yugang, Khang, Dahl-Young, Meitl, Matthew, Rogers, John A.
• Granted Patent: US 7,622,367 B1
• Time in Patent Office: Days
• US Class Current: 257/213
• CPC Class Codes: B81C 2201/0185 Printing, e.g. microcontact printing
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/308 using masks H01L21/3063, H01L21/3065 take precedence
• CPC Class Codes: H01L 21/322 to modify their internal properties, e.g. to produce internal imperfections
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0332 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03614 by chemical means only
• CPC Class Codes: H01L 2224/0362 Photolithography
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05552 : in top view
• CPC Class Codes: H01L 2224/05553 : being rectangular
• CPC Class Codes: H01L 2224/05554 : being square
• CPC Class Codes: H01L 2224/05555 : being circular or elliptic
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/08225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/80 : Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 2224/80006 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/80121 : Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
• CPC Class Codes: H01L 2224/80862 : Heat curing
• CPC Class Codes: H01L 2224/80895 : between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83121 : Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83193 : wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/9202 : Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/95 : at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/02 : Containers; Seals H01L23/12, H01L23/34, H01L23/48, H01L23/552, H01L23/66 take precedence; for memories G11C
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/80 : Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 27/1285 : using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 : using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/04 : characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/06 : characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/0665 : the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 : oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 : oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/068 : comprising a junction
• CPC Class Codes: H01L 29/12 : characterised by the materials of which they are formed
• CPC Class Codes: H01L 29/76 : Unipolar devices , e.g. field effect transistors
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78681 : having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15159 : Side view
• CPC Class Codes: H01L 2924/15162 : Top view
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/1579 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 31/0392 : including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 31/03926 : comprising a flexible substrate
• CPC Class Codes: H01L 31/1804 : comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1864 : Annealing
• CPC Class Codes: H01L 31/1896 : for thin-film semiconductors
• CPC Class Codes: H01L 33/007 : comprising nitride compounds
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 977/707 : having different types of nanoscale structures or devices on a common substrate
• CPC Class Codes: Y10S 977/724 : Devices having flexible or movable element

Abstract

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Claims

1. An electrical device comprising:

a first electrode;

a second electrode; and

a printable semiconductor element positioned in electrical contact with said first and second electrodes, said printable semiconductor element comprising a unitary inorganic semiconductor structure and wherein said printable semiconductor element provides a fill factor between said first and second electrodes greater than or equal to about 20%.

2. The electrical device of claim 1 wherein said printable semiconductor element provides a fill factor between said first and second electrodes greater than or equal to about 50%.

3. The electrical device of claim 1 wherein said printable semiconductor element comprises a microstructured printable semiconductor element or a nanostructured printable semiconductor element.

4. The electrical device of claim 1 wherein said printable semiconductor element has a shape selected from the group consisting of

a ribbon;

a platelet;

a column;

a cylinder;

a disc; and

a block.

5. The electrical device of claim 1 further comprising at least one additional printable semiconductor element, wherein additional printable semiconductor elements are in electrical contact with said first and second electrodes.

6. An electrical device comprising:

a first electrode;

a second electrode; and

a printable semiconductor element positioned in electrical contact with said first and second electrodes, said printable semiconductor element comprising a unitary inorganic semiconductor structure having at least one cross sectional dimension greater than or equal to about 500 nanometers.

7. The electrical device of claim 6 wherein said unitary inorganic semiconductor structure has thickness greater than or equal to about 10 nanometers, a width greater than or equal to about 100 nanometers and a length greater than or equal to about 1 micron.

8. The electrical device of claim 6 wherein said unitary inorganic semiconductor structure has a thickness selected from the range of about 10 nanometers to about 100 microns, a width selected from the range of about 100 nanometers to about 1 millimeter and a length selected from the range of about 1 micron to about 1 millimeter.

9. The electrical device of claim 6 wherein said unitary inorganic semiconductor structure has a ratio of length to width equal to or less than about 10.

10. The electrical device of claim 6 wherein said unitary inorganic semiconductor structure has a ratio of length to width equal to or less than about 1.5.

11. The electrical device of claim 6 wherein said unitary inorganic semiconductor structure has a ratio of thickness to width equal to or less than about 0.1.

12. The electrical device of claim 6 wherein said printable semiconductor element comprises a microstructured printable semiconductor element or a nanostructured printable semiconductor element.

13. The electrical device of claim 6 wherein said printable semiconductor element has a shape selected from the group consisting of

a ribbon;

a platelet;

a column;

a cylinder;

a disc; and

a block.

14. The electrical device of claim 6 further comprising at least one additional printable semiconductor element, wherein additional printable semiconductor elements are in electrical contact with said first and second electrodes.

15. An electrical device comprising:

a first electrode;

a second electrode; and

a printable semiconductor element positioned in electrical contact with said first and second electrodes, said printable semiconductor element comprising a unitary inorganic semiconductor structure, wherein the concentration of heavy metal impurities in said inorganic semiconductor structure is less than or equal to 1 part per million atoms.

16. The electrical device of claim 15 wherein the concentration of heavy metal impurities in said inorganic semiconductor structure is less than or equal to 100 parts per billion atoms.

17. The electrical device of claim 15 wherein said inorganic semiconductor structure comprises a single crystalline semiconductor material, a polycrystalline semiconductor material.

18. The electrical device of claim 15 wherein said inorganic semiconductor structure comprises a doped crystalline semiconductor material.

19. The electrical device of claim 15 further comprising at least one additional printable semiconductor element, wherein additional printable semiconductor elements are in electrical contact with said first and second electrodes.

20. An electrical device comprising:

a first electrode;

a second electrode; and

a printable semiconductor element positioned in electrical contact with said first and second electrodes, wherein the position of said printable semiconductor element relative to said first electrode, said second electrode or both is selected to within about 50 microns.

21. The electrical device of claim 20 wherein the position of said printable semiconductor element relative to said first electrode, said second electrode or both is selected to within about 20 microns.

22. The electrical device of claim 20 wherein the position of said printable semiconductor element relative to said first electrode, said second electrode or both is selected to within about 5 microns.

23. The electrical device of claim 20 wherein said printable semiconductor element extends a length which terminates at first and second ends, wherein said first end of said printable semiconductor element is positioned within 5 microns of said first electrode, and wherein said second end of said printable semiconductor element is positioned within 5 microns of said second electrode.

24. The electrical device of claim 20 wherein said first and second electrodes are separated by a distance that is greater than 50% of the length of said printable semiconductor element.

25. The electrical device of claim 20 further comprising at least one additional printable semiconductor element, wherein additional printable semiconductor elements are in electrical contact with said first and second electrodes.

26. The electrical device of claim 20 comprising a device selected from the group consisting of:

a transistor;

a solar cell;

a photodiode;

a light emitting diode;

a microelectromechanical device;

a nanoelectromechanical device;

a laser;

a P-N junction;

a sensor;

a memory device; and

a complementary logic circuit.

27. An array of electrical devices comprising:

a first electrode;

a second electrode; and

a plurality of printable semiconductor elements, wherein each of said printable semiconductor elements are positioned in electrical contact with said first and second electrodes, wherein each of said printable semiconductor elements comprises a unitary inorganic semiconductor structure, and wherein said printable semiconductor elements provide a fill factor between said first and second electrodes greater than or equal to about 20%.

28. An array of electrical devices comprising:

a first electrode;

a second electrode; and

a plurality of printable semiconductor elements, wherein each of said printable semiconductor elements are positioned in electrical contact with said first and second electrodes, wherein each of said printable semiconductor elements comprises a unitary inorganic semiconductor structure having at least one cross sectional dimension greater than or equal to about 500 nanometers.

29. An array of electrical devices comprising:

a first electrode;

a second electrode; and

a plurality of printable semiconductor elements, wherein each of said printable semiconductor elements are positioned in electrical contact with said first and second electrodes, wherein each of said printable semiconductor elements comprises a unitary inorganic semiconductor structure, and wherein the concentration of heavy metal impurities in each of said inorganic semiconductor structures is less than or equal to 1 parts per million atoms.

30. An array of electrical devices comprising:

a first electrode;

a second electrode; and

a plurality of printable semiconductor elements, wherein each of said printable semiconductor elements are positioned in electrical contact with said first and second electrodes, and wherein the position of each of said printable semiconductor elements relative to said first electrode, said second electrode or both is selected to within about 50 microns.

31. The array of electrical devices of claim 30 wherein said printable semiconductor elements are substantially longitudinally oriented with respect to a selected alignment axis.

32. The array of electrical devices of claim 31 wherein said selected alignment axis extends along an axis which connects the closest points of said first and second electrical contacts.

33. The array of electrical devices of claim 30 wherein the positions of each of said printable semiconductor elements relative to said first electrode, said second electrode or both are selected to within about 5 microns.

34. The array of electrical devices of claim 30 wherein each of said printable semiconductor elements extends a length which terminates in first and second ends, wherein each of said first ends of said printable semiconductor elements are positioned within 5 microns of said first electrode, and wherein each of said second ends of said printable semiconductor elements are positioned within 5 microns of said second electrode.

35. The array of electrical devices of claim 30 wherein the positions of each of said printable semiconductor elements relative to each other is selected to within about 5 microns.

36. A method for assembling a printable semiconductor element on a receiving surface of a substrate, said method comprising the steps of:

providing said printable semiconductor element comprising a unitary inorganic semiconductor structure;

contacting said printable semiconductor element with a conformable transfer device having a contact surface, wherein contact between said contact surface and said printable semiconductor element binds said printable semiconductor element to said contact surface, thereby forming said contact surface having said printable semiconductor element disposed thereon;

contacting said printable semiconductor element disposed on said contact surface with said receiving surface of said substrate; and

separating said contact surface of said conformable transfer device and said printable semiconductor element, wherein said printable semiconductor element is transferred onto said receiving surface, thereby assembling said printable semiconductor element on said receiving surface of said substrate.

37. The method of claim 36 wherein conformal contact is established between the contact surface of said conformable transfer device and an external surface of said printable semiconductor element.

38. The method of claim 36 wherein conformal contact is established between said contact surface having said printable semiconductor element disposed thereon and said receiving surface of said substrate.

39. The method of claim 36 wherein said semiconductor element disposed on said contact surface is contacted with a selected region of said receiving surface with a placement accuracy greater than or equal to about 25 microns over a receiving surface area equal to about 5 cm².

40. The method of claim 36 wherein an adhesive layer is provided on said receiving surface, wherein said printable semiconductor element is contacted with said adhesive layer during transfer of said printable semiconductor element to said receiving surface of said substrate.

41. The method of claim 36 wherein said receiving surface of said substrate is a curved surface having a radius of curvature selected over the range of about 10 microns to about 10 meters.

42. The method of claim 36 wherein said conformable transfer device comprises an elastomeric stamp.

43. The method of claim 36 wherein said steps of:

contacting said printable semiconductor element with a conformable transfer device, contacting said printable semiconductor element disposed on said contact surface with said receiving surface of said substrate; and

separating said contact surface of said conformable transfer device and said printable semiconductor element comprise dry transfer printing said printable semiconductor element onto said receiving surface.

44. The method of claim 36 wherein said step of providing said printable semiconductor element comprises providing said semiconductor element in a selected orientation on a mother substrate, wherein said selected orientation of said semiconductor element is maintained during contact with said contact surface by an alignment maintaining element which couples said mother substrate and said printable semiconductor element.

45. The method of claim 44 wherein said step of contacting said printable semiconductor element disposed on said contact surface with said receiving surface of said substrate device disengages said alignment maintaining element, thereby releasing said printable semiconductor element from said mother substrate.

46. The method of claim 36 further comprising the steps of:

providing additional printable semiconductor elements each of which comprising a unitary inorganic semiconductor structure;

contacting said printable semiconductor elements with a conformable transfer device having a contact surface, wherein contact between said contact surface and said printable semiconductor element binds said printable semiconductor elements to said contact surface and generates said contact surface having said printable semiconductor elements disposed thereon in relative orientations comprising a selected pattern of said printable semiconductor elements;

contacting said printable semiconductor elements disposed on said contact surface with said receiving surface of said substrate; and

separating said contact surface of said conformable transfer device and said printable semiconductor elements, wherein said printable semiconductor elements are transferred onto said receiving surface in said relative orientations comprising said selected pattern.

47. The method of claim 46 wherein said printable semiconductors are provided on a mother substrate in said relative orientations comprising said selected pattern, and wherein said relative orientations are preserved during transfer to said receiving surface.

48. The method of claim 46 wherein said conformable transfer device establishes conformal contact between the contact surface and selected printable semiconductor elements but not all of said printable semiconductor elements, thereby generating said contact surface having said printable semiconductor element disposed thereon in said relative orientations comprising said selected pattern, and wherein said relative orientations are preserved during transfer to said receiving surface.

49. The method of claim 46 wherein a pattern of adhesive material is provided on the contact surface of said conformable transfer device, wherein said pattern of adhesive material at least partially corresponds to said selected pattern of printable semiconductor elements.

50. The method of claim 46 wherein said selected pattern of semiconductor elements is generated on said receiving surface of said substrate with good fidelity.

51. The method of claim 46 wherein said conformable transfer device has a plurality of contact surfaces having relative positions corresponding to said selected pattern.

52. The method of claim 36 wherein said substrate is a plastic substrate.

53. The method of claim 36 comprising a method for fabricating an electrical device selected from the group consisting of:

a transistor;

a solar cell;

a photodiode;

a light emitting diode;

a microelectromechanical device;

a nanoelectromechanical device;

a laser;

a P-N junction; and

a complementary logic circuit.

54. A method for assembling a printable semiconductor element on a receiving surface of a substrate, said method comprising the steps of:

providing said printable semiconductor element comprising a unitary inorganic semiconductor structure, wherein said printable semiconductor element has at least one cross sectional dimension greater than or equal to about 500 nanometers;

dispersing said semiconductor element in a solvent, thereby generating a suspension comprising said semiconductor element in said solvent; and

delivering said semiconductor element to said substrate by solution printing said suspension onto said receiving surface thereby assembling said semiconductor element onto said receiving surface.

55. The method of claim 54 wherein said step of delivering said semiconductor element to said substrate by solution printing said suspension onto said receiving surface uses a printing technique selected from the group consisting of:

ink jet printing;

thermal transfer printing;

capillary action printing; and

screen printing.

56. The method of claim 54 further comprising the step of directing said semiconductor element onto a selected region of said receiving surface and in a selected orientation.

57. The method of claim 56 wherein said semiconductor element is directed onto said selected region of said receiving surface and in a selected orientation using electrostatic forces, magnetostatic forces or acoustic waves.

58. The method of claim 54 further comprising the steps of:

providing additional printable semiconductor elements, wherein each of said additional printable semiconductor elements has at least one cross sectional dimension greater than or equal to about 500 nanometers;

dispersing said semiconductor elements in said solvent, thereby generating a suspension comprising said semiconductor elements in said solvent; and

delivering said semiconductor elements to said substrate by solution printing said suspension onto said receiving surface, thereby assembling said semiconductor elements onto said receiving surface.

59. The method of claim 54 further comprising the steps of:

providing a binding region of said receiving surface that binds to said semiconductor element, and

binding said semiconductor element to said binding region of said receiving surface.

60. The method of claim 59 wherein said binding region is hydrophilic or hydrophobic.

61. The method of claim 54 wherein said substrate is a plastic substrate.

62. The method of claim 54 comprising a method for fabricating an electrical device selected from the group consisting of:

a transistor;

a solar cell;

a photodiode;

a light emitting diode;

a microelectromechanical device;

a nanoelectromechanical device;

a laser;

a P-N junction; and

a complementary logic circuit.

63. The method of claim 54 wherein said printable semiconductor element further comprises a handle element, said method further comprising directing said semiconductor element onto a selected region of said receiving surface and in a selected orientation using said handle element.

64. A method for fabricating a printable semiconductor element, said method comprising the steps of:

providing a wafer having an external surface, said wafer comprising an inorganic semiconductor material;

masking a selected region of said external surface by applying a mask;

etching said external surface of said wafer, thereby generating a relief structure and at least one exposed surface of said wafer, wherein said relief structure has a masked side and one or more unmasked sides;

applying a mask to at least a portion of said unmasked sides of said relief structure; and

at least partially etching said exposed surfaces of said wafer, thereby fabricating said printable semiconductor element.

65. The method of claim 64 wherein said printable semiconductor element is connected to said wafer via an alignment maintaining element.

66. The method of claim 64 further comprising the step of depositing a dielectric layer onto said external surface, wherein said semiconductor element comprises an inorganic semiconductor structure in contact with a dielectric.

67. The method of claim 64 further comprising the steps of:

depositing a dielectric layer on said external surface, wherein said dielectric layer has an internal side opposite an external side, wherein said external side of said dielectric layer is in contact with said external surface of said wafer; and

depositing a conducting layer onto said external side of said dielectric layer;

wherein said semiconductor element comprises a inorganic semiconductor structure, a dielectric and an electrode, wherein said dielectric is positioned between said crystalline semiconductor structure and said electrode.

68. A method for fabricating a printable semiconductor element connected to a mother wafer via one or more alignment maintaining elements, said method comprising the steps of:

providing said mother wafer having an external surface, said wafer comprising an inorganic semiconductor material;

masking a selected region of said external surface by applying a mask;

etching said external surface of said wafer, thereby generating a relief structure and at least one exposed surface of said wafer, wherein said relief structure has a masked side and one or more unmasked sides;

etching said exposed surfaces of said wafer; and

stopping etching of said exposed surfaces so that complete release of said relief structure is prevented, thereby fabricating said printable semiconductor element connected to a mother wafer via one or more alignment maintaining elements.

69. The method of claim 68 wherein said printable semiconductor element has a peanut shape with a first end and a second end, wherein said alignment maintaining elements connect said first and second ends of said printable semiconductor element to said mother wafer.

70. The method of claim 68 wherein said printable semiconductor element has a ribbon shape with a first end and a second end, wherein said alignment maintaining elements connect said first and second ends of said printable semiconductor element to said mother wafer.

71. A method for fabricating a printable semiconductor element, said method comprising the steps of:

providing a wafer having an external surface, said wafer comprising an inorganic semiconductor;

masking selected regions of said external surface by applying a first mask;

etching said external surface of said wafer, thereby generating a plurality of relief structures;

annealing said wafer, thereby generating an annealed external surface;

masking selected regions of said annealed external surface by applying a second mask; and

etching said annealed external surface, thereby generating said printable semiconductor element.

72. The method of claim 71 wherein said printable semiconductor element is connected to said wafer via an alignment maintaining element.

73. A method for fabricating a printable semiconductor element, said method comprising the steps of:

providing an ultra thin wafer having an external surface, said wafer comprising an inorganic semiconductor and having a selected thickness along an axis orthogonal to said external surface;

masking selected regions of said external surface by applying a mask;

etching said external surface of said wafer, wherein said wafer is etched throughout said thickness along said axis orthogonal to said external surface, thereby generating said printable semiconductor element.

74. A printable semiconductor element comprising:

a unitary crystalline inorganic semiconductor structure; and

at least one handle element connected to said crystalline inorganic semiconductor structure.

75. The printable semiconductor element of claim 74 wherein said handle element is responsive to a magnetic field, an electric field or both.

76. The printable semiconductor element of claim 74 wherein said handle element comprises a ferromagnetic material.

77. The printable semiconductor element of claim 74 comprising two handle elements.

78. The printable semiconductor element of claim 74 wherein said unitary crystalline inorganic semiconductor structure is a ribbon extending along a central axis and terminating along said central axis at a first end and a second end, wherein said handles elements are provided at said first and second ends of said ribbon.

79. A method for assembling a printable semiconductor element on a receiving surface of a substrate, said method comprising the steps of:

providing said semiconductor element comprising a unitary crystalline inorganic semiconductor structure and a handle element;

dispersing said semiconductor element in a solvent, thereby generating a suspension comprising said semiconductor element in said solvent;

delivering said semiconductor element to said substrate by dispersing said suspension onto said receiving surface;

aligning said semiconductor element on said receiving surface by providing a magnetic field, electric field or both, wherein said magnetic field, electric field or both interacts with said handle element, thereby generating a force which moves said semiconductor element into a selected position and orientation, thereby assembling said semiconductor element onto said receiving surface.

80. A printable P-N junction comprising a unitary crystalline inorganic semiconductor structure having at least one cross section dimension greater than or equal to about 500 nanometers, wherein said crystalline inorganic semiconductor structure comprises a P-doped region in electrical contact with a N-doped region.

81. A transistor supported by a plastic substrate comprising:

a source electrode in electrical contact with a printable semiconductor element, said printable semiconductor element comprising a unitary crystalline inorganic semiconductor structure;

a drain electrode in electrical contact with said printable semiconductor element; and

a gate electrode separated from said source and drain electrodes, wherein applying an electric potential to said gate electrode affects the flow of electrons between source and drain electrodes through said printable semiconductor element;

wherein said transistor has a device field effect mobility equal to or greater than 100 cm² V<sup>−

1</sup>s<sup>−

1</sup>.

82. An array of electrical devices comprising:

a first electrode;

a second electrode; and

a plurality of printable semiconductor elements, wherein each of said printable semiconductor elements are positioned in electrical contact with said first and second electrodes, wherein at least one physical dimension of said printable semiconductor elements varies by less than about 10%.

83. The array of electrical devices of claim 82 wherein the average lengths of said printable semiconductor elements vary by less than about 10%.

84. The array of electrical devices of claim 82 wherein the average widths of said printable semiconductor elements vary by less than about 10%.

85. The array of electrical devices of claim 82 wherein the average thicknesses of said printable semiconductor elements vary by less than about 10%.

86. The array of electrical devices of claim 82 comprising more than 20 printable semiconductor elements.

87. The array of electrical devices of claim 82 comprising more than 50 printable semiconductor elements.