SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a substrate;
a source region formed on the surface portion of the substrate,a first insulating layer formed on the substrate;
a gate electrode formed on the first insulating layer;
a second insulating layer formed on the gate electrode;
a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void;
a gate insulating film surrounding the body section, and formed between the body section and the gate electrode; and
a drain region connected with the body section.
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Abstract
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.
73 Citations
17 Claims
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1. A semiconductor device comprising:
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a substrate; a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate; a gate electrode formed on the first insulating layer; a second insulating layer formed on the gate electrode; a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void; a gate insulating film surrounding the body section, and formed between the body section and the gate electrode; and a drain region connected with the body section. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a source region surrounded by a first insulating film; a second insulating film formed on the first insulating film and the source region; a plurality of third insulating films and gate electrodes alternately laminated on the second insulating film; a body section connected with the source region, penetrating through the plurality of third insulating films, gate electrodes and the second insulating film, and containing a void; a fourth insulating film surrounding the body section, having a charge accumulating ability formed between the body section and the gate electrode; and a drain region formed on the body section. - View Dependent Claims (9, 10, 11)
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12. A semiconductor device comprising:
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a substrate; a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate; a gate electrode formed on the first insulating layer; a second insulating layer formed on the gate electrode; a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a third insulating layer; a gate insulating film surrounding the body section, and formed between the body section and the gate electrode; and a drain region connected with the body section. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification