INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Accused Products
Abstract
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
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Citations
20 Claims
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1-14. -14. (canceled)
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15. An insulated-gate type semiconductor device having a longitudinal structure, comprising:
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a semiconductor main body indicative of a first conductivity type; a first semiconductor region indicative of a second conductivity type, which is formed in said semiconductor main body; a second semiconductor region indicative of the first conductivity type, which is formed in said first semiconductor region; and a trench gate which is reached from a major surface of said second semiconductor region to the region of said semiconductor main body;
wherein;a portion of a gate pillar which is made of both said trench gate and an insulating film for covering an upper surface of said trench gate exceeds and is projected from the major surface of said second semiconductor region; a side wall spacer is provided on a side wall of said projected gate pillar; and a source electrode connected to said semiconductor region is provided on a contact region defined by said side wall spacer. - View Dependent Claims (17)
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16. An insulated-gate type semiconductor device having a longitudinal structure, comprising:
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a semiconductor main body indicative of a first conductivity type; a first semiconductor region indicative of a second conductivity type, which is formed in said semiconductor main body; a second semiconductor region indicative of the first conductivity type, which is formed in said first semiconductor region; and a trench gate which is reached from a major surface of said second semiconductor region to the region of said semiconductor main body;
wherein;a portion of said trench gate exceeds and is projected from the major surface of said second semiconductor region; a side wall spacer is provided on both said projected trench gate and a side wall of an insulating film for covering an upper surface of said trench gate; and a source electrode connected to said semiconductor region is provided in a contact hole defined by said side wall spacer.
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18. A method for manufacturing an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on said major surface, comprising:
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a step of forming a first semiconductor region within said semiconductor substrate; a step of forming a trench in said semiconductor substrate in such a manner that said trench penetrates said first semiconductor forming region; a step of forming a gate insulating film on a surface of said first semiconductor region which is exposed within said trench; a step in which the trench where said gate insulating film is formed by a gate pillar made of both said gate-purpose conductive layer and a cap insulating film for capping an upper surface of said gate-purpose conductive layer, and a portion of said gate pillar is projected from the major surface of said semiconductor substrate; a step of forming a second semiconductor region within said first semiconductor region which is segmented by said trench; a step of forming a side wall spacer on both said projected conductive layer and an insulating film for covering an upper surface of said projected conductive layer; and a step of forming said source-purpose conductive layer in a source contact region defined by said side wall spacer.
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19. A method for manufacturing an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on said major surface, comprising:
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a step of forming a first semiconductor region within said semiconductor substrate; a step of forming a plurality of trenches in said semiconductor substrate in such a manner that said trenches penetrate said first semiconductor forming region; a step of forming a gate insulating film on a surface of said first semiconductor region which is exposed within each of said trenches; a step in which each of said trenches where said gate insulating film is formed is embedded, and a portion of said gate-purpose conductive layer which is projected to the major surface of the semiconductor substrate is formed; a step of forming a second semiconductor region within said first semiconductor region which is segmented by said trenches; a step of forming a side wall spacer on both said projected conductive layer and an insulating film for covering an upper surface of said projected conductive layer; a step of forming a contact hole in a source contact region defined by said side wall spacer; and a step of forming said source-purpose conductive layer in said contact hole.
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20. A method for manufacturing an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on said major surface, comprising:
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a step of forming a first semiconductor region within said semiconductor substrate; a step of forming a trench in said semiconductor substrate in such a manner that said trench penetrates said first semiconductor forming region; a step of forming a gate insulating film on a surface of said first semiconductor region which is exposed within said trench; a step in which the trench where said gate insulating film is formed by a gate pillar made of both said conductive layer for said gate and a cap insulating film for capping an upper surface of said conductive layer for said gate, and a portion of said gate pillar is projected from the major surface of said semiconductor substrate; a step of forming a second semiconductor region within said first semiconductor region which is segmented by said trench; a step of forming a side wall spacer on both said projected conductive layer and an insulating film for covering an upper surface of said projected conductive layer; a step of forming a contact hole in said second semiconductor region, while said side wall spacer is employed as a mask; a step in which after said contact hole has been formed, the side wall spacer is moved backwardly by way of an etching back operation so as to expose a surface of the semiconductor substrate of said second semiconductor region; and a step of forming said source-purpose conductive layer within both the exposed surface portion of the semiconductor substrate of said second semiconductor region and also said contact hole.
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Specification