FIELD EFFECT STRUCTURE AND METHOD INCLUDING SPACER SHAPED METAL GATE WITH ASYMMETRIC SOURCE AND DRAIN REGIONS
First Claim
1. A semiconductor structure comprising:
- a semiconductor substrate that includes a channel region;
a plurality of source regions and drain regions located within the semiconductor substrate and separated by the channel region; and
a metal gate that has a spacer shape located over the channel region, where the plurality of source regions and drain regions is asymmetric with respect to the metal gate.
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Accused Products
Abstract
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device, such as a field effect transistor, that includes a spacer shaped metal gate located over a channel within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. Within the semiconductor structure, the plurality of source and drain regions is asymmetric with respect to the spacer shaped metal gate. The particular semiconductor structure may be fabricated using a self aligned dummy gate method that uses a portion of a spacer as a self alignment feature when forming the spacer shaped metal gate, which may have a sub-lithographic linewidth.
14 Citations
20 Claims
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1. A semiconductor structure comprising:
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a semiconductor substrate that includes a channel region; a plurality of source regions and drain regions located within the semiconductor substrate and separated by the channel region; and a metal gate that has a spacer shape located over the channel region, where the plurality of source regions and drain regions is asymmetric with respect to the metal gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor structure comprising:
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a semiconductor substrate that includes a channel region; a plurality of source regions and drain regions located within the semiconductor substrate and separated by the channel region; a metal gate that has a spacer shape located over the channel region; and a spacer located adjacent opposite sidewalls of the metal gate, where the plurality of source regions and drain regions is asymmetric with respect to the metal gate. - View Dependent Claims (13, 14, 15)
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16. A method for fabricating a semiconductor structure comprising:
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forming a dummy gate over a semiconductor substrate; forming a spacer adjacent the dummy gate; forming a plurality of source regions and drain regions into the semiconductor substrate that are separated by a channel within the semiconductor substrate while using, at least in part, the gate and the spacer as a mask; stripping a portion of the spacer, and all of the dummy gate, from over the semiconductor substrate to leave a remaining portion of the spacer over the semiconductor substrate; and forming a spacer shaped metal gate over the channel and asymmetric with respect to the plurality of source regions and drain regions while using the remaining portion of the spacer as a self-alignment feature. - View Dependent Claims (17, 18, 19, 20)
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Specification