Edge Termination for Semiconductor Devices
First Claim
1. A high-voltage termination structure, comprising:
- a peripheral voltage-spreading network, comprising one or more trench structures connected at least partly in series between first and second voltages;
said trench structures respectively comprising current-limiting structures connected in series with a semiconductor material, and which include permanent charge in a trench-wall dielectric,whereby said current-limiting structures, in combination with said semiconductor material, provide a voltage distribution of the difference between said first and second voltages.
2 Assignments
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Accused Products
Abstract
A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.
28 Citations
27 Claims
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1. A high-voltage termination structure, comprising:
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a peripheral voltage-spreading network, comprising one or more trench structures connected at least partly in series between first and second voltages; said trench structures respectively comprising current-limiting structures connected in series with a semiconductor material, and which include permanent charge in a trench-wall dielectric, whereby said current-limiting structures, in combination with said semiconductor material, provide a voltage distribution of the difference between said first and second voltages. - View Dependent Claims (2, 3, 4, 5, 6, 8, 10)
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7. (canceled)
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9. (canceled)
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11-13. -13. (canceled)
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14. A high-voltage device termination structure, comprising:
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a patterned combination of at least one first structure which conducts lateral current with one or more second structures which do not conduct lateral current; said first structure being laterally confined, by said second structures, to define a continuous path from a core portion to an edge portion, which is more than three times as long as the direct distance from said core portion to said edge portion; whereby the conductivity of said first structure defines a voltage distribution between said core portion and said edge portion. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a core portion which controls passage of current between at least two terminals; and an edge portion which includes a peripheral voltage-spreading network, comprising one or more trench structures connected at least partly in series between first and second terminals; said trench structures respectively comprising current-limiting structures connected in series with a semiconductor material whose that includes permanent charge in a trench-wall dielectric, whereby said current-limiting structures, in combination with said semiconductor material, provide a voltage distribution between said core portion and said edge portion. - View Dependent Claims (21, 22, 23, 24, 26)
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25. (canceled)
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27-38. -38. (canceled)
Specification