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Edge Termination for Semiconductor Devices

  • US 20090294892A1
  • Filed: 04/06/2009
  • Published: 12/03/2009
  • Est. Priority Date: 06/02/2008
  • Status: Active Grant
First Claim
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1. A high-voltage termination structure, comprising:

  • a peripheral voltage-spreading network, comprising one or more trench structures connected at least partly in series between first and second voltages;

    said trench structures respectively comprising current-limiting structures connected in series with a semiconductor material, and which include permanent charge in a trench-wall dielectric,whereby said current-limiting structures, in combination with said semiconductor material, provide a voltage distribution of the difference between said first and second voltages.

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