PLASMA REACTOR WITH HIGH SPEED PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF DIFFERENT UNMATCHED FREQUENCY SOURCES

• US 20090295295A1
• Filed: 05/29/2008
• Published: 12/03/2009
• Est. Priority Date: 05/29/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hoffman, Daniel J., Shannon, Steven C., Ramaswamy, Kartik, Miller, Matthew L., Collins, Kenneth S.
• Granted Patent: US 8,018,164 B2
• Time in Patent Office: Days
• US Class Current: 315/111.21
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H05H 1/36 Circuit arrangements H05H1/38, H05H1/40 take precedence
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.

Claims

1. A plasma reactor including a chamber for processing a workpiece, comprising:

plural impedance matches and plural RF plasma power generators coupled to deliver respective RF plasma powers into said chamber through respective ones of said impedance matches;

a first stabilization RF power generator operatively connected to deliver RF stabilization power of a first frequency into said chamber;

a controller programmed to;

(a) determine changes in load impedance from RF parameters sensed at one of said generators and resolve said changes in load impedance into different components thereof; and

(b) change the output power delivered by said first stabilization RF power generator into said chamber in response to a first component of said changes in load impedance.

2. The reactor of claim 1 further comprising:

a second stabilization RF power generator operatively connected to deliver RF stabilization power of a second frequency into said chamber;

wherein said controller is further programmed to;

(c) change the output power delivered by said second stabilization RF power generator into said chamber in response to a second component of said changes in load impedance.

3. The reactor of claim 2 wherein:

said first component is a reactive component and said first frequency is in an LF frequency range or below;

said second component is a resistive component and said second frequency is in or above an HF frequency range.

4. The reactor of claim 2 wherein:

said first component is a reactive component and said first frequency is in an LF frequency range or below;

said second component is a resistive component and said second frequency is in or above an HF frequency range.

5. The reactor of claim 2 further comprising first and second modulators at outputs of said first and second stabilization RF power generators, respectively, said modulators being responsive to said controller.

6. The reactor of claim 1 further comprising a workpiece support electrode in said chamber and wherein said first stabilization power generator is coupled to said support electrode.

7. The reactor of claim 1 further comprising a plasma source power applicator, said first generator being coupled to said plasma source power applicator through the corresponding impedance match, wherein said stabilization power generator is coupled to said RF plasma source power applicator.

8. The reactor of claim 7 wherein said source power applicator comprises an electrode in said ceiling.

9. The reactor of claim 7 wherein said source power applicator comprises an inductive coil antenna overlying said ceiling.

10. The reactor of claim 1 wherein said chamber comprises a ceiling electrode, and wherein said first stabilization power generator is coupled through said follower modulator to said ceiling electrode.

11. The reactor of claim 1 wherein said stabilization RF power generator is coupled to deliver RF power without an impedance match element at its output.

12. The reactor of claim 1 wherein:

one of said generators provides a signal representing a measured level of RF power reflected back to the generator, said signal being coupled to said controller;

said controller being programmed to adjust the level of said stabilization RF power generator to minimize said measured level of RF power reflected back to said generator.

13. The reactor of claim 2 wherein said reactor comprises a workpiece support electrode in said chamber and an RF plasma source power applicator, and wherein said second stabilization RF power generator is coupled to one of:

(a) said support electrode, (b) said RF plasma source power applicator.

15. A plasma reactor including a chamber for processing a workpiece, comprising:

an RF impedance match and an RF plasma power generator coupled to deliver RF plasma power into said chamber through said RF impedance match;

a first stabilization RF power generator operatively connected to deliver RF stabilization power into said chamber, and a first modulator coupled to modulate the output of said first stabilization RF power generator;

a controller programmed to;

(a) determine changes in load impedance from RF parameters sensed at said impedance match and resolve said changes in load impedance into first and second components thereof; and

(b) change the output power delivered by said stabilization RF power generator into said chamber as a function of the first component of said changes in load impedance.

14. The reactor of claim 15 wherein said reactor comprises a ceiling electrode, and wherein said stabilization RF power generator is coupled to said ceiling electrode.

16. The reactor of claim 15 further comprising:

a second stabilization RF power generator operatively connected to deliver RF stabilization power into said chamber, and a second modulator coupled to modulate the output of said stabilization RF power generator;

wherein said controller is further programmed to;

(c) change the output power delivered by said second stabilization RF power generator into said chamber as a function of the second component of said changes in load impedance.

17. The reactor of claim 16 wherein:

said first component is a reactive component and said first frequency is in an LF frequency range or below whereby a majority of said first stabilization RF power affects to plasma capacitance;

said second component is a resistive component and said second frequency is in or above an HF frequency range.

19. The reactor of claim 16 wherein:

said respective frequencies affect respective ones of said respective components of the change in load impedance.

18. A plasma reactor including a chamber for processing a workpiece, comprising:

an RF impedance match and an RF plasma power generator coupled to deliver RF plasma power into said chamber through said RF impedance match;

an array of stabilization RF power generators operatively connected to deliver RF stabilization power of different respective frequencies into said chamber, and an array of modulator coupled to modulate the outputs of respective ones of said stabilization RF power generators;

a controller programmed to;

(a) determine changes in load impedance from RF parameters sensed at said impedance match and resolve said changes in load impedance into plural components thereof; and

(b) make respective changes by the respective ones of said modulators in the output power delivered by respective ones of said stabilization RF power generators into said chamber as a function of the respective components of said changes in load impedance.