ADHESION TYPE AREA SENSOR AND DISPLAY DEVICE HAVING ADHESION TYPE AREA SENSOR

• US 20090295769A1
• Filed: 04/23/2009
• Published: 12/03/2009
• Est. Priority Date: 01/31/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 8,456,459 B2
• Time in Patent Office: Days
• US Class Current: 345/207
• CPC Class Codes: G09G 2360/142 the light being detected by light detection means within each pixel
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 31/14 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• CPC Class Codes: H04N 25/534 depending on the spectral component
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor
• CPC Class Codes: H10K 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the-light receiving portion.

Claims

1. A semiconductor device comprising:

a pixel having a light receiving portion and a display portion, the pixel comprising a thin film transistor and a photodiode,

wherein the thin film transistor includes a semiconductor layer,

wherein the photodiode includes a photoelectric conversion layer,

wherein the semiconductor layer and the photoelectric conversion layer are formed on a same surface, and

wherein the pixel is configured to irradiate the photoelectric conversion layer with the reflected light when a light from the display portion is reflected by a subject.

2. A semiconductor device according to claim 1, wherein the semiconductor layer and the photoelectric conversion layer are crystalline silicon films.

3. A semiconductor device according to claim 1, further comprising a touch pen and a touch panel.

4. A semiconductor device according to claim 1, wherein the semiconductor device is incorporated into a scanner.

5. A semiconductor device comprising:

a driver portion having a first thin film transistor; and

a sensor portion configured to display an image by using a light emitted from a light source, the sensor portion having a second thin film transistor and a photodiode,

wherein the first thin film transistor includes a first semiconductor layer formed on a base film over a glass substrate,

wherein the second thin film transistor includes a second semiconductor layer formed on the base film over the glass substrate,

wherein the photodiode includes a third semiconductor layer formed on the base film over the glass substrate, and

wherein the sensor portion is configured to irradiate the third semiconductor layer with the reflected light when the light emitted from the light source is reflected by a subject.

6. A semiconductor device according to claim 5, wherein the light source is an EL element.

7. A semiconductor device according to claim 5, wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer are crystalline silicon films.

8. A semiconductor device according to claim 5, further comprising a touch pen and a touch panel.

9. A semiconductor device according to claim 5, wherein the semiconductor device is incorporated into a scanner.

10. A semiconductor device capable of scanning an image of a subject comprising:

a pixel having a light receiving portion and a display portion, the pixel comprising a thin film transistor and a photodiode,

wherein the thin film transistor includes a semiconductor layer,

wherein the photodiode includes a photoelectric conversion layer,

wherein the semiconductor layer and the photoelectric conversion layer are formed on a same surface, and

wherein the pixel is configured to receive a reflected light from the subject in order to scan the image of the subject.

11. A semiconductor device capable of scanning an image of a subject according to claim 10, wherein the semiconductor layer and the photoelectric conversion layer are crystalline silicon films.

12. A semiconductor device capable of scanning an image of a subject according to claim 10, further comprising a touch pen and a touch panel.

13. A semiconductor device capable of scanning an image of a subject according to claim 10, wherein the semiconductor device is incorporated into a scanner.

14. A semiconductor device capable of scanning an image of a subject comprising:

a driver portion having a first thin film transistor; and

a sensor portion configured to display an image by using a light emitted from a light source, the sensor portion having a second thin film transistor and a photodiode,

wherein the first thin film transistor includes a first semiconductor layer formed on a base film over a glass substrate,

wherein the second thin film transistor includes a second semiconductor layer formed on the base film over the glass substrate,

wherein the photodiode includes a third semiconductor layer formed on the base film over the glass substrate, and

wherein the sensor portion is configured to receive a reflected light from the subject in order to scan the image of the subject.

15. A semiconductor device capable of scanning an image of a subject according to claim 14, wherein the light source is an EL element.

16. A semiconductor device capable of scanning an image of a subject according to claim 14, wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer are crystalline silicon films.

17. A semiconductor device capable of scanning an image of a subject according to claim 14, further comprising a touch pen and a touch panel.

18. A semiconductor device capable of scanning an image of a subject according to claim 14, wherein the semiconductor device is incorporated into a scanner.