Memory device and memory programming method
First Claim
1. A memory device comprising:
- a multi-bit cell array that includes a plurality of memory cells;
a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group based on the extracted state information, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and
a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage.
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Accused Products
Abstract
Provided are memory devices and memory programming methods. A memory device may include: a multi-bit cell array that includes a plurality of memory cells; a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage.
127 Citations
21 Claims
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1. A memory device comprising:
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a multi-bit cell array that includes a plurality of memory cells; a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group based on the extracted state information, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory programming method comprising:
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setting a verify voltage of a plurality of memory cells as a first voltage level; applying a first program voltage to a gate terminal of each of the plurality of memory cells to increase a threshold voltage of each of the memory cells; dividing the plurality of memory cells into first memory cells and remaining memory cells, the first memory cells being memory cells, from among the plurality of memory cells, with threshold voltages greater than or equal to the verify voltage of the first voltage level; resetting the verify voltage of remaining memory cells, excluding the first memory cells, as a second voltage level greater than the first voltage level; and applying a second program voltage to the gate terminal of each of the memory cells. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification