FILM FORMING SYSTEM AND METHOD FOR FORMING FILM

• US 20090297706A1
• Filed: 03/10/2006
• Published: 12/03/2009
• Est. Priority Date: 03/16/2005
• Status: Abandoned Application

• Current Assignee: Doshisha Company Limited, Horiba Limited
• Original Assignee: Doshisha Company Limited, Horiba Limited
• Inventors: Tominaga, Koji, Ishida, Kozo, Oshima, Motohiro, Senda, Jiro
• Application Number:
  US11/908,437
• Publication Number:
  US 20090297706A1
• Time in Patent Office: Days
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31637 Deposition of Tantalum oxides, e.g. Ta2O5

Abstract

An obstruct of this invention is to make it possible to form a metal-oxide film or a metal-nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well.

The film forming system in accordance with this invention comprises a chamber 3 inside of which a substrate 2 is held and an injection valve 4 that directly injects the liquid precursor into the chamber 3, wherein the liquid precursor is a mixed solution composed of a metallic compound and a low boiling point organic compound, and a pressure in the chamber 3 is made to be both larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.

Claims

1. A film forming system that forms a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate, comprising

a chamber inside of which the substrate is held and an injection valve that directly injects the liquid precursor into the chamber, wherein

the liquid precursor is a mixed solution composed of a metallic compound and a low boiling point organic compound, and

a pressure in the chamber is made to be larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.

2. The film forming system described in claim 1, wherein

the metallic compound is an organic tantalum compound or an organic niobium compound.

3. The film forming system described in claim 2, wherein

a vapor pressure of the organic tantalum compound or the organic niobium compound is smaller than or equal to 1 Torr even though a temperature is more than or equal to 100 degrees centigrade in an atmospheric pressure.

4. The film forming system described in claim 2, wherein

the organic tantalum compound or the organic niobium compound is liquid at a temperature lower than or equal to 40 degrees centigrade in an atmospheric pressure.

5. The film forming system described in claim 2, wherein the organic tantalum compound or the organic niobium compound is an alcoxide compound, an amine compound, a β

diketone complex, a phenyl compound or a 5 member ring compound.

6. The film forming system described in claim 1, wherein

a vapor pressure of the low boiling point organic compound in an atmospheric pressure is larger than or equal to 1 Torr even though a temperature is lower than or equal to 20 degrees centigrade.

7. The film forming system described in claim 1, wherein

the low boiling point organic compound is a compound that can be shown by C_XH_2X+2 (5≦

X≦

7).

8. The film forming system described in claim 1, wherein the low boiling point organic compound is a compound that can be shown by C_XH_2X+1OH (1≦

X≦

4).

9. A film forming method for forming a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate, wherein

a mixed solution as the liquid precursor composed of a metallic compound and a low boiling point organic compound is directly injected into a chamber inside of which the substrate is held, and a pressure in the chamber is made to be larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.

10. The film forming method for forming a film described in claim 9, wherein

the metallic compound is an organic tantalum compound or an organic niobium compound.