CERAMIC DIELECTRIC OR THIN AND/OR THICK LAYERS CONTAINING AT LEAST ONE CERAMIC DIELECTRIC METHOD FOR PRODUCTION AND USE THEREOF

• US 20090297804A1
• Filed: 04/16/2007
• Published: 12/03/2009
• Est. Priority Date: 04/18/2006
• Status: Active Grant

• Current Assignee: Forschungszentrum Karlsruhe Gmbh
• Original Assignee: Forschungszentrum Karlsruhe Gmbh
• Inventors: Scheele, Patrick, Paul, Florian, Ritzhaupt-Kleissl, Hans-Joachim, Giere, Andre, Hausselt, Jürgen, Jakoby, Rolf, Binder, Joachim
• Granted Patent: US 7,910,510 B2
• Time in Patent Office: Days
• US Class Current: 428/210
• CPC Class Codes: C01G 23/006 Alkaline earth titanates
• CPC Class Codes: C04B 2111/00844 for electronic applications
• CPC Class Codes: C04B 2235/32 Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
• CPC Class Codes: C04B 2235/3206 Magnesium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3213 Strontium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3217 Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
• CPC Class Codes: C04B 2235/3224 Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
• CPC Class Codes: C04B 2235/3225 Yttrium oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3241 Chromium oxides, chromates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3251 Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3262 Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
• CPC Class Codes: C04B 2235/3272 Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
• CPC Class Codes: C04B 2235/3275 Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
• CPC Class Codes: C04B 2235/3279 Nickel oxides, nickalates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3281 Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3286 Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
• CPC Class Codes: C04B 2235/3289 Noble metal oxides
• CPC Class Codes: C04B 2235/3291 Silver oxides
• CPC Class Codes: C04B 2235/3294 Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
• CPC Class Codes: C04B 2235/441 : Alkoxides, e.g. methoxide, tert-butoxide
• CPC Class Codes: C04B 2235/445 : Fluoride containing anions, e.g. fluosilicate
• CPC Class Codes: C04B 2235/449 : Organic acids, e.g. EDTA, citrate, acetate, oxalate
• CPC Class Codes: C04B 35/10 : based on aluminium oxide
• CPC Class Codes: C04B 35/4682 : based on BaTiO3 perovskite phase
• CPC Class Codes: C04B 35/624 : Sol-gel processing
• CPC Class Codes: C04B 35/6264 : Mixing media, e.g. organic solvents
• CPC Class Codes: C04B 35/62655 : Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
• CPC Class Codes: C04B 41/009 : characterised by the material treated
• CPC Class Codes: C04B 41/4537 : by the sol-gel process
• CPC Class Codes: C04B 41/4539 : as a emulsion, dispersion or suspension
• CPC Class Codes: C04B 41/5041 : Titanium oxide or titanates
• CPC Class Codes: C04B 41/5122 : Pd or Pt
• CPC Class Codes: C04B 41/52 : Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
• CPC Class Codes: C04B 41/87 : Ceramics
• CPC Class Codes: C04B 41/90 : at least one coating being a metal
• CPC Class Codes: H01G 4/1227 : based on alkaline earth titanates
• CPC Class Codes: Y10T 428/24926 : including ceramic, glass, porcelain or quartz layer

Abstract

The present invention relates to dielectric ceramics, thin and/or thick layers produced therefrom and a method for the production thereof and the use of the dielectrics and of the thin and/or thick layers.

Claims

1. A ceramic dielectric based on the system Ba_1-xSr_xTi_1-yMe_yO_3-zF_z wherein

x=0.0001 to 1, and

y=0.0001 to 0.2, and

z=0.00001 to 3, comprising one or more of the metals selected from the group consisting of Fe, Co, Mn, Ni, Cu, Mg, Cr, Zn, Cd, Ag, Y, Sc, Al, Ga, In, As, Sb, Pt and Au as doping metal Me.

2. The ceramic dielectric as claimed in claim 1, wherein at least one of Fe, Co, Mn, Ni, Cu, Mg and Cr, is the doping metal Me.

3. The ceramic dielectric as claimed in claim 1, wherein Zr is metal Me, alternatively to said metals or additionally to said metals.

4. The ceramic dielectric as claimed in claim 1, wherein the dielectric corresponds to the formula Ba_0.6Sr_0.4Ti_0.99Fe_0.01O_3-zF_z, where z is from 0.001 to 0.2.

5. The ceramic dielectric as claimed in claim 1 for thin and/or thick layer systems, the ceramic dielectric based on the system Ba_1-xSr_xTi_1-yMe_yO_3-zF_z wherein

x=0.0001 to 1, and

y=0.0001 to 0.2, and

z=0.00001 to 3, comprising one or more of the metals selected from the group consisting of Fe, Co, Mn, Ni, Cu, Mg, Cr, Zn, Cd, Ag, Y, Sc, Al, Ga, In, As, Sb, Pt and Au as doping metal Me.

6. The ceramic dielectric as claimed in claim 1 for controllable HF/microwave applications, the ceramic dielectric based on the system Ba_1-xSr_xTi_1-yMe_yO_3-zF_z wherein

x=0.0001 to 1, and

y=0.0001 to 0.2, and

z=0.00001 to 3, comprising one or more of the metals selected from the group consisting of Fe, Co, Mn, Ni, Cu, Mg, Cr, Zn, Cd, Ag, Y, Sc, Al, Ga, In, As, Sb, Pt and Au as doping metal Me.

7. The the ceramic dielectric as claimed in claim 5 for use as electronically controllable functional layers in the frequency range from 10 kHz to 500 GHz or above, preferably from 100 MHz to 100 GHz, particularly preferably 100 MHz and 50 GHz or from 100 MHz to 40 GHz.

8. The the ceramic dielectric as claimed in claim 7, wherein said layers are screen-printed thick layers.

9. The the ceramic dielectric as claimed in claim 8, wherein the thick layers produced are finely divided with particle sizes in the range from 20 to 1000 nm.

18. The ceramic dielectric as claimed in claim 1 comprising screen-printed thin and/or thick layers, for use as electronically controllable functional layers in the telecommunications sector, in the area of high frequency technology and/or in the area of telecommunications.

19. The ceramic dielectric as claimed in claim 1 comprising screen-printed thin and/or thick layers, for use as electronically controllable functional layers in mobile radio, satellite radio, point-to-multipoint radio systems, tunable RF filters and duplexers, adaptive matching networks or phase shifters, RF sensor systems, such as, for example, RFID.

20. The ceramic dielectric as claimed in claim 1 comprising screen-printed thick layers, for use as electronically controllable functional layers in compact electronically controllable and/or non-controllable HF/microwave modules, preferably in Bluetooth, mobile radio and RFID applications, in electronically controlled HF cables and electronically tunable high frequency filters, and in antennas.

21. The ceramic dielectric as claimed in claim 1, wherein

X=0.2 to 0.6,

y=0.001 to 0.05,

z=0.001 to 0.2.

10. A method for producing screen-printed thick layers, comprising multilayer structures the method comprising,producing a sol,producing a precursor via

a1) the inverse micelle route or

a2) the sol-gel route,

b) drying of the sol,

producing a ceramic powder by calcination of the precursor,

3).1 if appropriate, ultrasonic deagglomeration or milling of the ceramic powder,

producing the screen print paste by mixing of the constituents,application of the screen print paste to a substrate by means of screen printing,sintering of the thick layers,

the screen-printed thick layers comprising at least one ceramic dielectric based on the system Ba_1-xSr_xTi_1-yMe_yO_3-zF_z wherein

x=0.0001 to 1, and

y=0.0001 to 0.2, and

z=0.00001 to 3, comprising one or more of the metals selected from the group consisting of Fe, Co, Mn, Ni, Cu, Mg, Cr, Zn, Cd, Ag, Y, Sc, Al, Ga, In, As, Sb, Pt and Au as doping metal Me.

12. The method as claimed in claim 10, wherein the thin or thick layers are thin or thick layers, for use as electronically controllable functional layers and the at least one ceramic dielectric is a ceramic dielectric based on the system Ba_1-xSr_xTi_1-yMe_yO_3-zF_z wherein

x=0.0001 to 1, and

y=0.0001 to 0.2, and

z=0.00001 to 3, comprising one or more of the metals selected from the group consisting of Fe, Co, Mn, Ni, Cu, Mg, Cr, Zn, Cd, Ag, Y, Sc, Al, Ga, In, As, Sb, Pt and Au as doping metal Me.

13. The method as claimed in claim 10, wherein the sintering is effected by high-temperature sintering or by microwave sintering or a combination of the methods.

14. The method as claimed in claim 10, wherein the substrate to be coated in step 5) is covered with a metal layer, preferably comprising aluminum, nickel, palladium, copper, gold, silver and/or platinum, in particular platinum.

15. The method as claimed in claim 10, wherein the thin or thick layers are metalized in a further step.

16. The method as claimed in claim 15, comprising metalizing the thin or thick layers with chromium and/or gold.

17. The method as claimed in claim 16, wherein the metallization is effected by

a) screen printing,

b) vapor deposition,

c) sputtering,

d) ion etching or

e) inkjet printing.

11. A method for producing CSD thin layers having comprising multilayer structures the method comprising,

1a) producing a sol,

5a) applying the sol to a substrate by of

a) dipcoating,

b) spincoating or

c) inkjet printing and

6a) drying, calcinating and/or sintering the applied layers, the thin layers comprising at least one ceramic dielectric based on the system Ba_1-xSr_xTi_1-yMe_yO_3-zF_z wherein

x=0.0001 to 1, and

y=0.0001 to 0.2, and

z=0.00001 to 3, comprising one or more of the metals selected from the group consisting of Fe, Co, Mn, Ni, Cu, Mg, Cr, Zn, Cd, Ag, Y, Sc, Al, Ga, In, As, Sb, Pt and Au as doping metal Me.