SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
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1. A method for fabricating a semiconductor device, comprising:
- forming a first electrode over a first region of a substrate;
forming a dielectric layer over the substrate, wherein the dielectric layer covers the first electrode;
forming a plurality of openings in the dielectric layer on the first region;
forming a conductive layer over the substrate, wherein the conductive layer covers the dielectric layer and the openings;
removing the conductive layer at bottoms of the openings over the first region to form a second electrode; and
removing the dielectric layer between the second electrode and the first electrode.
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Abstract
A method of fabricating a semiconductor device is provided. First, a first electrode is formed over a first region of a substrate. Then, a dielectric layer covering the first electrode is formed over the substrate. After that, a plurality of openings is formed on the first region of the substrate. Thereafter, a conductive layer covering the dielectric layer and the openings is formed over the substrate. Then, the conductive layer in the bottom of the openings is removed to form second electrodes. After that, the dielectric layer between the second electrode and the first electrode is removed.
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Citations
24 Claims
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1. A method for fabricating a semiconductor device, comprising:
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forming a first electrode over a first region of a substrate; forming a dielectric layer over the substrate, wherein the dielectric layer covers the first electrode; forming a plurality of openings in the dielectric layer on the first region; forming a conductive layer over the substrate, wherein the conductive layer covers the dielectric layer and the openings; removing the conductive layer at bottoms of the openings over the first region to form a second electrode; and removing the dielectric layer between the second electrode and the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a first electrode, disposed over a first region of a substrate; and a conductive layer, disposed over the substrate, including a second electrode disposed above the first electrode, wherein the second electrode comprises a mesh main part having a plurality of openings, and a plurality of extending parts, wherein the extending parts are connected to the mesh main part at periphery of the openings and extend toward a surface of the first electrode. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification