Doped Metal Oxide Films and Systems for Fabricating the Same

• US 20090298225A1
• Filed: 11/18/2005
• Published: 12/03/2009
• Est. Priority Date: 11/19/2004
• Status: Abandoned Application

• Current Assignee: Agency For Science Technology and Research (Government of Singapore), National University of Singapore
• Original Assignee: National University of Singapore
• Inventors: Gong, Hao, Yu, Zhi Gen, Wu, Ping
• Application Number:
  US11/719,741
• Publication Number:
  US 20090298225A1
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/548 Controlling the composition
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02403 Oxides
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 31/186 Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of fabricating a doped metal oxide film comprising the steps of: (a) providing a semiconductor substrate in a vacuum chamber; (b) generating plasma comprising at least metal (M) , oxygen (O) and dopant ions within said chamber in the presence of an inert carrier gas; (c) forming a doped metal oxide (MO) film on said substrate from said plasma; and (d) controlling, during step (c) , the amount of O ions relative to said dopant ions within said plasma to form at least one of an n-type MO film and a p-type MO film on said substrate. A system for fabricating the doped metal oxide is also disclosed.

Claims

1. A method of fabricating a doped metal oxide film comprising the steps of:

(a) providing a semiconductor substrate in a vacuum chamber;

(b) generating plasma comprising at least metal (M), oxygen (O), and dopant ions within said chamber in the presence of an inert carrier gas;

(c) forming a doped metal oxide (MO) film on said substrate from said plasma;

(d) controlling, during step (c), the amount of O ions relative to said metal ions within said plasma to form at least one of an n-type MO film and a p-type MO film on said substrate; and

(e) selecting said dopant that comprises phosphorous (P).

2. A method as claimed in claim 1, wherein said selecting step (e) comprises:

(e1) selecting the dopant that consists essentially of phosphorous (P).

3. A method as claimed in claim 1, further comprising the step of:

(f) selecting said metal ions from Groups IIB or Group III of the Periodic Table of Elements.

4. A method as claimed in claim 3, wherein said selecting step (f) comprises:

(f1) selecting zinc (2n) ions as said metal ions.

5. A method as claimed in claim 1, wherein said controlling step (d) comprises the step of:

(d1) regulating the flow of oxygen gas into said chamber.

6. A method as claimed in claim 1, comprising the step of:

(g) providing a target material within said chamber to generate said at least M, O and dopant ions within said plasma.

7. A method as claimed in claim 6, wherein said providing step (g) comprises the step of:

(g1) selecting a target from at least one of M, MO and dopant material.

8. A method as claimed in claim 6, where said providing step (g) comprises the step of:

(g2) providing one or more target materials within said chamber having a higher molar ratio of M atoms relative to O atoms.

9. A method as claimed in claim 8, where said providing step (g2) comprises selecting the ratio of M atoms relative to O atoms in said target material from the group consisting of:

about 1.01;

1, about 1.05;

1, about 1.1;

1, about 1.2;

1, about 1.5;

1, about 2;

1, about 3;

1, about 2.01;

3, about 2.05;

3, about 2.1;

3, about 2.2;

3, about 2.5;

3, about 3;

3 and about 4;

3.

10. A method as claimed in claim 5, wherein said regulating step (d1) comprises:

(d2) selecting the amount of oxygen gas by volume in the chamber in the range selected from the group consisting of 0% to less than 7%, 0% to 3%, 0% to 2%, 0% to 1%, 3% to 6%, 3% to 5%, and 3% to 4%.

11. A method as claimed in claim 5, wherein said regulating step (d1) comprises:

(d3) maintaining the amount of amount of oxygen within said chamber in the range of 0% to 3% by volume to form the n-type MO film.

12. A method as claimed in claim 5, wherein said regulating step (d1) comprises:

(d4) maintaining the amount of oxygen within said chamber in the range between 3% to less than 7% by volume to form the p-type MO film.

13. A method as claimed in claim 1, comprising the step of maintaining, during step (c), the pressure within said vacuum chamber within the group consisting of:

100 mPa to 7,000 mPa, 100 mPa to 5,000 mPa, 100 mPa to 4,000 mPa, 100 mPa to 3,000 mPa, 100 mPa to 2,000 mPa, 500 mPa to 7,000 mPa, 1000 mPa to 7,000 mPa, 2000 mPa to 7,000 mPa, and 3000 mPa to 7,000 mPa.

14. A method as claimed in claim 1, comprising maintaining the substrate, during step (c), at a temperature in the range selected from the group consisting of:

200°

C. to 500°

C.;

300°

C. to 500°

C., 400°

C. to 500°

C., 200°

C. to 400°

C., 200°

C. to 300°

C.

15. A method as claimed in claim 5, wherein the volume ratio of oxygen gas to inert carrier gas in the chamber is in the range selected from the group consisting of:

5;

95 to 20;

80, 5;

95 to 15;

85, 5;

95 to 10;

90, 10;

90 to 20;

80, and 15;

85 to 20;

80.

16. A system for fabricating a doped-metal oxide (MO) film comprising:

a vacuum chamber having a mount for mounting a semi-conductor substrate therein;

a plasma generator capable of generating plasma from one or more targets, said plasma comprising at least metal (M), oxygen (O) and dopant ions, wherein said dopant comprises phosphorous;

at least one gas conduit for supplying gas into said chamber;

a controller for controlling the supply of said gas to said chamber and for controlling said plasma generator;

wherein in use, a semi-conductor substrate is mounted on said mount and an inert carrier gas is supplied to said chamber via said gas conduit, and wherein said controller operates said plasma generator to form plasma comprising at least metal (M), oxygen (O) and dopant ions to form a doped MO film layer on said mounted substrate, and wherein the amount of O ions relative to M ions within said plasma is controlled to form at least one of an n-type MO film and a p-type MO film on said substrate.

17. A system as claimed in claim 16, wherein said metal ions are metal ions selected from Groups IIB and III of the Periodic Table of Elements.

18. A system as claimed in claim 17, wherein said metal is zinc (Zn).

19. A system as claimed in claim 16, wherein said dopant consists essentially of phosphorous (P).

20. A system as claimed in claim 16, wherein in use, said controller regulates the flow of oxygen gas into said chamber.

21. A system as claimed in claim 20, wherein the controller comprises a mass flow controller to control said supply of gas into said chamber.

22. A system as claimed in claim 16, wherein said one or more targets comprises at least one of M, dopant and MO.

23. A system as claimed in claim 16, wherein said one or more targets have a higher molar ratio of M atoms relative to O atoms.

24. A system as claimed in claim 16, wherein said one or more targets comprises M atoms relative to O atoms in a ratio selected from the group consisting of:

about 1.01;

1, about 1.05;

1, about 1.1;

1, about 1.2;

1, about 1.5;

1, about 2;

1, about 3;

1, about 2.01;

3, about 2.05;

3, about 2.1;

3, about 2.2;

3, about 2.5;

3, about 3;

3 and about 4;

3.

25. A system as claimed in claim 17, wherein the amount of oxygen gas by volume in the chamber is in the range selected from the group consisting of 0% to less than 7%, 0%, to 3%, 0% to 2%, 0% to 1%, 3% to 6%, 3% to 56%, and 3% to 4%.

26. A system as claimed in claim 17, wherein the amount of amount of oxygen gas by volume within said chamber is maintained in the range of 0% to 3% by volume to form the n-type MO film.

27. A system as claimed in claim 17, wherein the amount of amount of oxygen gas by volume within said chamber is maintained in the range of 3% to less than 7% by volume to form the p-type MO film.

28. A system as claimed in claim 16, wherein pressure within said vacuum chamber is in the range selected from the group consisting of:

100 mPa to 7,000 mPa, 100 mPa to 5,000 mPa, 100 mPa to 4,000 mPa, 100 mPa to 3,000 mPa, 100 mPa to 2,000 mPa, 500 mPa to 7,000 mPa, 1000 mPa to 7,000 mPa, 2000 mPa to 7,000 mPa, and 3000 mPa to 7,000 mPa.

29. A system as claimed in claim 16, wherein temperature within said vacuum chamber is in the range selected from the group consisting of:

200°

C. to 500°

C., 300°

C. to 500°

C., 400°

C. to 500°

C., 200°

C. to 400°

C., 200°

C. to 300°

C.

30. A system as claimed in claim 16, wherein the volume ratio of oxygen gas to inert carrier gas in the chamber is in the range selected from the group consisting of:

5;

95 to 20;

80, 5;

95 to 15;

85, 5;

95 to 10;

90, 10;

90 to 20;

80, and 15;

85 to 20;

80.

31. A method of fabricating a phosphorous-doped zinc oxide (ZnO) film comprising the steps of:

(a) providing a semiconductor substrate in a vacuum chamber;

(b) generating plasma comprising at least zinc (Zn), oxygen (O) and phosphorous (P) ions within said chamber in the presence of an inert carrier gas;

(c) forming a phosphorous doped ZnO film layer on said substrate from said plasma; and

(d) controlling, during step (c), the amount of O ions relative to Zn ions within said plasma to form at least one of an n-type ZnO film and a p-type ZnO film on said substrate.

32. A method as claimed in claim 31, wherein said controlling step (d) comprises the step of:

(d1) regulating the flow of oxygen gas into said chamber.

33. a method as claimed in claim 31, comprising the step of:

(e) providing a target material within said chamber to generate said at least Zn, O and P ions within said plasma.

34. A method as claimed in claim 33 wherein said providing step (e) comprises the step of:

(e1) selecting a target from at least one of Zn, P, ZnO, P₂O₅, and Zn₃P₂.

35. A method as claimed in claim 33 wherein said providing step (e) comprises the step of:

(e2) providing one or more target materials within said chamber having a higher molar ratio of Zn atoms relative to O atoms.

36. A method as claimed in claim 35 where said providing step (e2) comprises selecting the ratio of Zn atoms relative to O atoms in said target material from the group consisting of:

about 1.01;

1, about 1.05;

1, about 1.1;

1, about 1.2;

1, about 1.5;

1, about 2;

1 and about 3;

1.

37. A method as claimed in claim 32 wherein said regulating step (d1) comprises:

(d2) selecting the amount of oxygen gas by volume in the chamber in the range selected from the group consisting of 0% to less than 7%, 0% to 3%, 0% to 2%, 0% to 1%, 3% to 6%, 3% to 5%, and 3% to 4%.

38. A method as claimed in claim 32 wherein said regulating step (d1) comprises:

(d3) maintaining the amount of amount of oxygen within said chamber in the range of 0% to 3% by volume to form the n-type ZnO film.

39. A method as claimed in claim 32, wherein said regulating step (d1) comprises:

(d4) maintaining the amount of amount of oxygen within said chamber in the range between 3% to less than 7% by volume to form the p-type ZnO film.

40. A method as claimed in claim 31, comprising the step of maintaining, during step (c), the pressure within said vacuum chamber within the group consisting of:

100 mPa to 7,000 mPa, 100 mPa to 5,000 mPa, 100 mPa to 4,000 mPa, 100 mPa to 3,000 mPa, 100 mPa to 2,000 mPa, 500 mPa to 7,000 mPa, 1000 mPa to 7,000 mPa, 2000 mPa to 7,000 mPa, and 3000 mPa to 7,000 mPa.

41. A method as claimed in claim 31 comprising maintaining the substrate, during step (c), at a temperature in the range selected from the group consisting of:

200°

C. to 500°

C., 300°

C. to 500°

C., 400°

C. to 500°

C., 200°

C. to 400°

C., 200°

C. to 300°

C.

42. A method as claimed in claim 32 wherein the volume ratio of oxygen gas to inert carrier gas in the chamber is in the range selected from the group consisting of:

5;

95 to 20;

80, 5;

95 to 15;

85, 5;

95 to 10;

90, 10;

90 to 20;

80, and 15;

85 to 20;

80.

43. A system for fabricating a phosphorous doped zinc oxide (ZnO) film comprising:

a vacuum chamber having a mount for mounting a semi-conductor substrate therein;

a plasma generator capable of generating plasma from one or more targets, said plasma comprising at least zinc (Zn), oxygen (O) and phosphorous (P) ions;

at least one gas conduit for supplying gas into said chamber;

a controller for controlling the supply of said gas to said chamber and for controlling said plasma generator;

wherein in use, a semi-conductor substrate is mounted on said mount and an inert carrier gas is supplied to said chamber via said gas conduit, and wherein said controller operates said plasma generator to form plasma comprising at least zinc (Zn), oxygen (O) and phosphorous (P) ions to form a phosphorous doped ZnO film layer on said mounted substrate, and wherein the amount of O ions relative to Zn ions within said plasma is controlled to form at least one of an n-type ZnO film and a p-type ZnO film on said substrate.

44. A system as claimed in claim 43 wherein in use, said controller regulates the flow of oxygen gas into said chamber.

45. A system as claimed in claim 44 wherein the controller comprises a mass flow controller to control said supply of gas into said chamber.

46. A system as claimed in claim 43 wherein said one or more targets comprises at least one of Zn, P, ZnO, P₂O₅, and Zn₃P₂.

47. A system as claimed in claim 43 wherein said one or more targets have a higher molar ratio of Zn atoms relative to O atoms.

48. A system as claimed in claim 43 wherein said one or more targets comprises Zn atoms relative to O atoms in a ratio selected from the group consisting of:

about 1.01;

1, about 1.05;

1, about 1.1;

1, about 1.2;

1, about 1.5;

1, about 2;

1 and about 3;

1.

49. A system as claimed in claim 44 wherein the amount of oxygen gas by volume in the chamber is in the range selected from the group consisting of 0% to less than 7%, 0% to 3%, 0% to 2%, 0% to 1%, 3% to 6%, 3% to 5%, and 3% to 4%.

50. A system as claimed in claim 44, wherein the amount of amount of oxygen gas by volume within said chamber is maintained in the range of 0% to 3% by volume to form the n-type ZnO film.

51. A system as claimed in claim 44, wherein the amount of amount of oxygen gas by volume within said chamber is maintained in the range of 3% to less than 7% by volume to form the p-type ZnO film.

52. A system as claimed in claim 43 wherein pressure within said vacuum chamber is in the range selected from the group consisting of:

100 mPa to 7,000 mPa, 100 mPa to 5,000 mPa, 100 mPa to 4,000 mPa, 100 mPa to 3,000 mPa, 100 mPa to 2,000 mPa, 500 mPa to 7,000 mPa, 1000 mPa to 7,000 mPa, 2000 mPa to 7,000 mPa, and 3000 mPa to 7,000 mPa.

53. A system as claimed in claim 43 wherein temperature within said vacuum chamber is in the range selected from the group consisting of:

200°

C. to 500°

C., 300°

C. to 500°

C., 400°

C. to 500°

C., 200°

C., to 400°

C., 200°

C. to 300°

C.

54. A system as claimed in claim 43, wherein the volume ratio of oxygen gas to inert carrier gas in the chamber is in the range selected from the group consisting of:

5;

95 to 20;

80, 5;

95 to 15;

85, 5;

95 to 10;

90, 10;

90 to 20;

80, and 15;

85 to 20;

80.