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Doped Metal Oxide Films and Systems for Fabricating the Same

  • US 20090298225A1
  • Filed: 11/18/2005
  • Published: 12/03/2009
  • Est. Priority Date: 11/19/2004
  • Status: Abandoned Application
First Claim
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1. A method of fabricating a doped metal oxide film comprising the steps of:

  • (a) providing a semiconductor substrate in a vacuum chamber;

    (b) generating plasma comprising at least metal (M), oxygen (O), and dopant ions within said chamber in the presence of an inert carrier gas;

    (c) forming a doped metal oxide (MO) film on said substrate from said plasma;

    (d) controlling, during step (c), the amount of O ions relative to said metal ions within said plasma to form at least one of an n-type MO film and a p-type MO film on said substrate; and

    (e) selecting said dopant that comprises phosphorous (P).

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