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DEVICE ISOLATION TECHNOLOGY ON SEMICONDUCTOR SUBSTRATE

  • US 20090298257A1
  • Filed: 05/30/2008
  • Published: 12/03/2009
  • Est. Priority Date: 05/30/2008
  • Status: Active Grant
First Claim
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1. A method of forming a conformal and/or gap-filling insulative layer on a semiconductor substrate having at least one trench, comprising:

  • providing a silicon-containing gas, a nitrogen-containing gas, and a carbon-containing gas as a process gas, said process gas being capable of filling the trench by forming a flowable, insulative material by plasma reaction at first flow rates of the silicon-containing gas, the nitrogen-containing gas, and the carbon-containing gas;

    decreasing a ratio of the first flow rate of the carbon-containing gas to the first flow rate of the silicon-containing gas and/or a ratio of the first flow rate of the carbon-containing gas to the first flow rate of the nitrogen-containing gas; and

    forming a conformal/flowable, insulative material by plasma reaction at the decreased flow rate(s), thereby forming a conformal coating in the trench as a result of the step of decreasing the ratio(s).

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