Using a Phase Change Memory as a High Volume Memory

• US 20090300467A1
• Filed: 08/11/2009
• Published: 12/03/2009
• Est. Priority Date: 09/10/2004
• Status: Active Grant

• Current Assignee: Ovonyx Memory Technology, LLC
• Original Assignee: Ward D. Parkinson
• Inventors: Parkinson, Ward D.
• Granted Patent: US 8,566,674 B2
• Time in Patent Office: Days
• US Class Current: 714/773
• CPC Class Codes: G06F 11/106 Correcting systematically all correctable errors, i.e. scrubbing
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 2213/72 Array wherein the access device being a diode
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor

Abstract

A phase change memory may be utilized in place of more conventional, higher volume memories such as static random access memory, flash memory, or dynamic random access memory. To account for the fact that the phase change memory is not yet a high volume technology, an error correcting code may be incorporated. The error correcting code may be utilized in ways which do not severely negatively impact read access times, in some embodiments.

Claims

1. An article comprising a medium storing instructions that, if executed, enable a processor-based system to:

identify an error in data read by a phase change memory.

2. The article of claim 1 further storing instructions that, if executed, enable the processor-based system to correct an incorrect bit by writing back a correct bit.

3. The article of claim 2 further storing instructions that, if executed, enable the processor-based system to wait until a power cycle to write back a corrected bit.

4. The article of claim 1 further storing instructions that, if executed, enable the processor-based system to executed error correcting code.

5. The article of claim 4 further storing instructions that, if executed, enable the processor-based system to identify errors using a Hamming code.