Semiconductor Device and Method of Shielding Semiconductor Die from Inter-Device Interference
First Claim
1. A method of making a semiconductor device, comprising:
- providing a first semiconductor wafer having a plurality of semiconductor die;
creating a gap between the semiconductor die;
depositing a conductive material in a bottom portion of the gap;
depositing an insulating material in the gap and over the semiconductor die;
removing a portion of the insulating material in the gap to form a recess between each semiconductor die extending to the conductive material;
forming a shielding layer over the insulating material and in the recess to contact the conductive material, the shielding layer isolating the semiconductor die from inter-device interference;
forming a substrate with a build-up structure on the semiconductor die adjacent to the conductive material;
electrically connecting the conductive material to a ground point in the substrate; and
singulating the first semiconductor wafer through the gap to separate the semiconductor die.
5 Assignments
0 Petitions
Accused Products
Abstract
A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.
157 Citations
23 Claims
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1. A method of making a semiconductor device, comprising:
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providing a first semiconductor wafer having a plurality of semiconductor die; creating a gap between the semiconductor die; depositing a conductive material in a bottom portion of the gap; depositing an insulating material in the gap and over the semiconductor die; removing a portion of the insulating material in the gap to form a recess between each semiconductor die extending to the conductive material; forming a shielding layer over the insulating material and in the recess to contact the conductive material, the shielding layer isolating the semiconductor die from inter-device interference; forming a substrate with a build-up structure on the semiconductor die adjacent to the conductive material; electrically connecting the conductive material to a ground point in the substrate; and singulating the first semiconductor wafer through the gap to separate the semiconductor die. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a semiconductor device, comprising:
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providing a first semiconductor wafer having a plurality of semiconductor die; disposing a second semiconductor wafer having a plurality of semiconductor die over the first semiconductor wafer so that the semiconductor die in the first and second wafers are aligned; creating a gap between the semiconductor die of the first and second semiconductor wafers; depositing a conductive material in a bottom portion of the gap; depositing an insulating material in the gap and over the semiconductor die of the first and second semiconductor wafers; removing a portion of the insulating material in the gap to form a recess between each semiconductor die extending to the conductive material; forming a shielding layer over the insulating material and in the recess to contact the conductive material, the shielding layer isolating the semiconductor die from inter-device interference; and singulating the first and second semiconductor wafers through the gap to separate the semiconductor die. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of making a semiconductor device, comprising:
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creating a gap between a plurality of semiconductor die; depositing a conductive material in a bottom portion of the gap; depositing an insulating material in the gap and over the semiconductor die; removing a portion of the insulating material in the gap to form a recess between each semiconductor die extending to the conductive material; and forming a shielding layer over the insulating material and in the recess to contact the conductive material, the shielding layer isolating the semiconductor die from inter-device interference. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a semiconductor die including a conductive via formed through the semiconductor die; a stiffener ring formed around the semiconductor die; an insulating layer formed over the semiconductor die; a shielding layer formed over the insulating material to isolate the semiconductor die from inter-device interference, the shielding layer electrically connected to the stiffener ring; and a substrate attached to the semiconductor die, wherein the stiffener ring is electrically connected to a ground point in the substrate. - View Dependent Claims (21, 22, 23)
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Specification