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RESIN SEALED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

  • US 20090302444A1
  • Filed: 08/22/2008
  • Published: 12/10/2009
  • Est. Priority Date: 06/05/2008
  • Status: Active Grant
First Claim
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1. A resin sealed semiconductor device comprising:

  • a first semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof;

    a first emitter terminal bonded to said emitter of said first semiconductor switching device;

    a first collector terminal bonded at a first surface thereof to said collector of said first semiconductor switching device;

    a second semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof;

    a second emitter terminal bonded to said emitter of said second semiconductor switching device;

    a second collector terminal bonded at a first surface thereof to said collector of said second semiconductor switching device;

    a first heat sink directly or indirectly bonded at a first surface thereof to a second surface of said first collector terminal, said second surface of said first collector terminal being opposite said first surface of said first collector terminal;

    a second heat sink directly or indirectly bonded at a first surface thereof to a second surface of said second collector terminal, said second surface of said second collector terminal being opposite said first surface of said second collector terminal; and

    a molding resin integrally covering said first and second semiconductor switching devices;

    wherein a second surface of said first heat sink is exposed from said molding resin, said second surface of said first heat sink being opposite said first surface of said first heat sink;

    wherein a second surface of said second heat sink is exposed from said molding resin, said second surface of said second heat sink being opposite said first surface of said second heat sink;

    wherein said emitter of said first semiconductor switching device faces said emitter of said second semiconductor switching device; and

    wherein said first emitter terminal is spaced apart from said second emitter terminal.

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