RESIN SEALED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
First Claim
1. A resin sealed semiconductor device comprising:
- a first semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof;
a first emitter terminal bonded to said emitter of said first semiconductor switching device;
a first collector terminal bonded at a first surface thereof to said collector of said first semiconductor switching device;
a second semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof;
a second emitter terminal bonded to said emitter of said second semiconductor switching device;
a second collector terminal bonded at a first surface thereof to said collector of said second semiconductor switching device;
a first heat sink directly or indirectly bonded at a first surface thereof to a second surface of said first collector terminal, said second surface of said first collector terminal being opposite said first surface of said first collector terminal;
a second heat sink directly or indirectly bonded at a first surface thereof to a second surface of said second collector terminal, said second surface of said second collector terminal being opposite said first surface of said second collector terminal; and
a molding resin integrally covering said first and second semiconductor switching devices;
wherein a second surface of said first heat sink is exposed from said molding resin, said second surface of said first heat sink being opposite said first surface of said first heat sink;
wherein a second surface of said second heat sink is exposed from said molding resin, said second surface of said second heat sink being opposite said first surface of said second heat sink;
wherein said emitter of said first semiconductor switching device faces said emitter of said second semiconductor switching device; and
wherein said first emitter terminal is spaced apart from said second emitter terminal.
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Accused Products
Abstract
A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.
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Citations
12 Claims
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1. A resin sealed semiconductor device comprising:
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a first semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof; a first emitter terminal bonded to said emitter of said first semiconductor switching device; a first collector terminal bonded at a first surface thereof to said collector of said first semiconductor switching device; a second semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof; a second emitter terminal bonded to said emitter of said second semiconductor switching device; a second collector terminal bonded at a first surface thereof to said collector of said second semiconductor switching device; a first heat sink directly or indirectly bonded at a first surface thereof to a second surface of said first collector terminal, said second surface of said first collector terminal being opposite said first surface of said first collector terminal; a second heat sink directly or indirectly bonded at a first surface thereof to a second surface of said second collector terminal, said second surface of said second collector terminal being opposite said first surface of said second collector terminal; and a molding resin integrally covering said first and second semiconductor switching devices; wherein a second surface of said first heat sink is exposed from said molding resin, said second surface of said first heat sink being opposite said first surface of said first heat sink; wherein a second surface of said second heat sink is exposed from said molding resin, said second surface of said second heat sink being opposite said first surface of said second heat sink; wherein said emitter of said first semiconductor switching device faces said emitter of said second semiconductor switching device; and wherein said first emitter terminal is spaced apart from said second emitter terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A resin sealed semiconductor device comprising:
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a first semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof; a second semiconductor switching device having an emitter in a top surface thereof and a collector in a bottom surface thereof; a main electrode output terminal sandwiched between said top surface of said first semiconductor switching device and said bottom surface of said second semiconductor switching device; a first collector terminal bonded at a first surface thereof to said collector of said first semiconductor switching device; a second emitter terminal bonded at a first surface thereof to said emitter of said second semiconductor switching device; a first high heat dissipation insulator of an organic composition directly or indirectly bonded at a first surface thereof to a second surface of said first collector terminal, said second surface of said first collector terminal being opposite said first surface of said first collector terminal; a second high heat dissipation insulator of an organic composition directly or indirectly bonded at a first surface thereof to a second surface of said second emitter terminal, said second surface of said second emitter terminal being opposite said first surface of said second emitter terminal; a first heat sink bonded at a first surface thereof to a second surface of said first high heat dissipation insulator, said second surface of said first high heat dissipation insulator being opposite said first surface of said first high heat dissipation insulator; a second heat sink bonded at a first surface thereof to a second surface of said second high heat dissipation insulator, said second surface of said second high heat dissipation insulator being opposite said first surface of said second high heat dissipation insulator; and a molding resin integrally covering said first and second semiconductor switching devices; wherein a second surface of said first heat sink is exposed from said molding resin, said second surface of said first heat sink being opposite said first surface of said first heat sink; wherein a second surface of said second heat sink is exposed from said molding resin, said second surface of said second heat sink being opposite said first surface of said second heat sink; and wherein said first and second high heat dissipation insulators have a glass transition temperature lower than the temperature at which said molding resin softens.
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9. A method for manufacturing a resin sealed semiconductor device, comprising the steps of:
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bonding a first emitter terminal to an emitter formed in a top surface of a first semiconductor switching device; bonding a first surface of a first collector terminal to a collector formed in a bottom surface of said first semiconductor switching device; directly or indirectly bonding a first surface of a first heat sink to a second surface of said first collector terminal, said second surface of said first collector terminal being opposite said first surface of said first collector terminal; bonding a second emitter terminal to an emitter formed in a top surface of a second semiconductor switching device; bonding a first surface of a second collector terminal to a collector formed in a bottom surface of said second semiconductor switching device; directly or indirectly bonding a first surface of a second heat sink to a second surface of said second collector terminal, said second surface of said second collector terminal being opposite said first surface of said second collector terminal; placing said first and second semiconductor switching devices, said first and second emitter terminals, said first and second collector terminals, and said first and second heat sinks together in position within a cavity formed by an upper die and a lower die; and injecting a molding resin into said cavity to integrally cover said first and second semiconductor switching devices; wherein said placing step and said injecting step are performed such that; a second surface of said first heat sink is in contact with an inner bottom surface of said lower die, said second surface of said first heat sink being opposite said first surface of said first heat sink; a second surface of said second heat sink is in contact with an inner top surface of said upper die, said second surface of said second heat sink being opposite said first surface of said second heat sink; said emitter of said first semiconductor switching device faces said emitter of said second semiconductor switching device; and said first emitter terminal is spaced apart from said second emitter terminal. - View Dependent Claims (10, 11)
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12. A method for manufacturing a resin sealed semiconductor device, comprising the steps of:
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bonding a first surface of a first collector terminal to a collector of a first semiconductor switching device, said first semiconductor switching device having an emitter in a top surface thereof and said collector in a bottom surface thereof; directly or indirectly bonding a first surface of a first high heat dissipation insulator of an organic composition to a second surface of said first collector terminal, said second surface of said first collector terminal being opposite said first surface of said first collector terminal; bonding a first surface of a first heat sink to a second surface of said first high heat dissipation insulator, said second surface of said first high heat dissipation insulator being opposite said first surface of said first high heat dissipation insulator; bonding a first surface of a second emitter terminal to an emitter of a second semiconductor switching device, said second semiconductor switching device having said emitter in a top surface thereof and a collector in a bottom surface thereof; directly or indirectly bonding a first surface of a second high heat dissipation insulator of an organic composition to a second surface of said second emitter terminal, said second surface of said second emitter terminal being opposite said first surface of said second emitter terminal; bonding a first surface of a second heat sink to a second surface of said second high heat dissipation insulator, said second surface of said second high heat dissipation insulator being opposite said first surface of said second high heat dissipation insulator; bonding and sandwiching a main electrode output terminal between said top surface of said first semiconductor switching device and said bottom surface of said second semiconductor switching device; placing said first and second semiconductor switching devices, said first collector terminal, said second emitter terminal, said first and second high heat dissipation insulators, said first and second heat sinks, and said main electrode output terminal together in position within a cavity formed by an upper die and a lower die; and injecting a molding resin into said cavity to integrally cover said first and second semiconductor switching devices; wherein said first and second high heat dissipation insulators have a glass transition temperature lower than the temperature at which said molding resin softens; and wherein said placing step and said injecting step are performed such that; a second surface of said first heat sink is in contact with an inner bottom surface of said lower die, said second surface of said first heat sink being opposite said first surface of said first heat sink; and a second surface of said second heat sink is in contact with an inner top surface of said upper die, said second surface of said second heat sink being opposite said first surface of said second heat sink.
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Specification