METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20090302456A1
• Filed: 06/02/2009
• Published: 12/10/2009
• Est. Priority Date: 06/06/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: OIKAWA, Yoshiaki, EGUCHI, Shingo, SHOJI, Hironobu
• Granted Patent: US 8,609,464 B2
• Time in Patent Office: Days
• US Class Current: 257/701
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

Claims

1. A method for manufacturing a semiconductor device comprising:

sealing a plurality of element layers each containing a semiconductor integrated circuit and an antenna between a first insulator and a second insulator;

forming a layered structure containing a first conductive layer on a surface of the first insulator, the first insulator, the plurality of element layers, the second insulator, and a second conductive layer on a surface of the second insulator; and

melting the first insulator and the second insulator, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first conductive layer and the second conductive layer are electrically connected to each other by the dividing step.

3. The method for manufacturing a semiconductor device according to claim 1, wherein a resistance between the first conductive layer and the second conductive layer is reduced to 1 GΩ

or less by the dividing step.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the first conductive layer or the second conductive layer has a multi-layer structure.

5. The method for manufacturing a semiconductor device according to claim 1, wherein at least one of the first insulator and the second insulator has a thickness of 5 μ

m to 50 μ

m.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the first insulator or the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device further comprises a booster antenna electromagnetically coupled to the antenna.

8. A method for manufacturing a semiconductor device comprising:

sealing a plurality of element layers each containing a semiconductor integrated circuit and an antenna between a first insulator and a second insulator;

forming a layered structure containing a first conductive layer on a surface of the first insulator, the first insulator, the plurality of element layers, the second insulator, and a second conductive layer on a surface of the second insulator; and

irradiating the layered structure with laser light, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the first conductive layer and the second conductive layer are electrically connected to each other by the dividing step.

10. The method for manufacturing a semiconductor device according to claim 8, wherein a resistance between the first conductive layer and the second conductive layer is reduced to 1 GΩ

or less by the dividing step.

11. The method for manufacturing a semiconductor device according to claim 8, wherein the first conductive layer or the second conductive layer has a multi-layer structure.

12. The method for manufacturing a semiconductor device according to claim 8, wherein at least one of the first insulator and the second insulator has a thickness of 5 μ

m to 50 μ

m.

13. The method for manufacturing a semiconductor device according to claim 8, wherein the first insulator or the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

14. The method for manufacturing a semiconductor device according to claim 8, wherein the semiconductor device further comprises a booster antenna electromagnetically coupled to the antenna.

15. A method for manufacturing a semiconductor device comprising:

forming a plurality of element layers each containing a semiconductor integrated circuit and an antenna over a substrate;

forming a first insulator over the plurality of element layers;

forming a first conductive layer over the first insulator;

separating the plurality of element layers from the substrate;

forming a second insulator at an opposite side of the first insulator;

forming a second conductive layer over the second insulator; and

melting the first insulator and the second insulator, whereby the plurality of element layers are divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

16. The method for manufacturing a semiconductor device according to claim 15, wherein the first conductive layer and the second conductive layer are electrically connected to each other by the dividing step.

17. The method for manufacturing a semiconductor device according to claim 15, wherein a resistance between the first conductive layer and the second conductive layer is reduced to 1 GΩ

or less by the dividing step.

18. The method for manufacturing a semiconductor device according to claim 15, wherein the first conductive layer or the second conductive layer has a multi-layer structure.

19. The method for manufacturing a semiconductor device according to claim 15, wherein at least one of the first insulator and the second insulator has a thickness of 5 μ

m to 50 μ

m.

20. The method for manufacturing a semiconductor device according to claim 15, wherein the first insulator or the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

21. The method for manufacturing a semiconductor device according to claim 15, wherein the semiconductor device further comprises a booster antenna electromagnetically coupled to the antenna.

22. A method for manufacturing a semiconductor device comprising:

forming a plurality of element layers each containing a semiconductor integrated circuit and an antenna over a substrate;

forming a first insulator over the plurality of element layers;

forming a first conductive layer over the first insulator;

separating the plurality of element layers from the substrate;

forming a second insulator at an opposite side of the first insulator;

forming a second conductive layer over the second insulator; and

irradiating the first insulator and the second insulator with laser light, whereby the plurality of element layers are divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

23. The method for manufacturing a semiconductor device according to claim 22, wherein the first conductive layer and the second conductive layer are electrically connected to each other by the dividing step.

24. The method for manufacturing a semiconductor device according to claim 22, wherein a resistance between the first conductive layer and the second conductive layer is reduced to 1 GΩ

or less by the dividing step.

25. The method for manufacturing a semiconductor device according to claim 22, wherein the first conductive layer or the second conductive layer has a multi-layer structure.

26. The method for manufacturing a semiconductor device according to claim 22, wherein at least one of the first insulator and the second insulator has a thickness of 5 μ

m to 50 μ

m.

27. The method for manufacturing a semiconductor device according to claim 22, wherein the first insulator or the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

28. The method for manufacturing a semiconductor device according to claim 22, wherein the semiconductor device further comprises a booster antenna electromagnetically coupled to the antenna.

29. A semiconductor device comprising:

a first conductive layer;

a first insulator over the first conductive layer;

a second insulator over the first insulator;

a second conductive layer over the second insulator; and

an element layer sealed between the first insulator and the second insulator,

wherein each of the first insulator and the second insulator has a cut surface formed by melting, and the first conductive layer and the second conductive layer are electrically connected to each other through the cut surfaces.

30. The semiconductor device according to claim 29, wherein the first conductive layer or the second conductive layer has a multi-layer structure.

31. The semiconductor device according to claim 29, wherein at least one of the first insulator and the second insulator has a thickness of 5 μ

m to 50 μ

m.

32. The semiconductor device according to claim 29, wherein the first insulator or the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

33. The semiconductor device according to claim 29, wherein the semiconductor device further comprises a booster antenna electromagnetically coupled to the antenna.

34. The semiconductor device according to claim 29, wherein the semiconductor device is a semiconductor integrated circuit chip.

35. A semiconductor device comprising:

a first conductive layer;

a first insulator over the first conductive layer;

a second insulator over the first insulator;

a second conductive layer over the second insulator; and

an element layer sealed between the first insulator and the second insulator,

wherein each of the first insulator and the second insulator has a cut surface formed by laser light irradiation; and

wherein the first conductive layer and the second conductive layer are electrically connected to each other through the cut surfaces.

36. The semiconductor device according to claim 35, wherein the first conductive layer or the second conductive layer has a multi-layer structure.

37. The semiconductor device according to claim 35, wherein at least one of the first insulator and the second insulator has a thickness of 5 μ

m to 50 μ

m.

38. The semiconductor device according to claim 35, wherein the first insulator or the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

39. The semiconductor device according to claim 35, wherein the semiconductor device further comprises a booster antenna electromagnetically coupled to the antenna.

40. The semiconductor device according to claim 35, wherein the semiconductor device is a semiconductor integrated circuit chip.