SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A semiconductor device, comprising:
- a first insulating film formed over a semiconductor substrate;
a plurality of interconnects formed in the first insulating film, where a void is selectively formed between adjacent ones of the plurality of interconnects in the first insulating film; and
a second insulating film formed in a region located over the void and between the interconnects, whereinrespective widths of a lower end and an upper end of the void are substantially the same as a gap between the interconnects located adjacent to the void, andthe lower end of the void is located lower than lower ends of the interconnects located adjacent to the void.
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Abstract
A semiconductor device includes a first interlayer insulating film, and a plurality of first interconnects formed in the first interlayer insulating film. A void is selectively formed between adjacent ones of the plurality of first interconnects in the first interlayer insulating film, and a cap insulating film is formed in a region located over the void and between the interconnects. Respective widths of a lower end and an upper end of the void are substantially the same as a gap between the interconnects located adjacent to the void, and the lower end of the void is located lower than lower ends of the first interconnects located adjacent to the void.
52 Citations
16 Claims
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1. A semiconductor device, comprising:
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a first insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first insulating film, where a void is selectively formed between adjacent ones of the plurality of interconnects in the first insulating film; and a second insulating film formed in a region located over the void and between the interconnects, wherein respective widths of a lower end and an upper end of the void are substantially the same as a gap between the interconnects located adjacent to the void, and the lower end of the void is located lower than lower ends of the interconnects located adjacent to the void. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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(a) forming a first insulating film over a semiconductor substrate; (b) forming a plurality of interconnect formation grooves in the first insulating film; (c) embedding a conductive film in the interconnect formation grooves to form a plurality of interconnects; (d) selectively forming a void formation groove between the interconnects in the first interlayer insulating film; (e) forming a sacrificial film in the void formation groove; (f) removing an upper part of the sacrificial film to form a recess in the upper part of the sacrificial film; (g) forming a second insulating film in the recess; and (h) after the step (g), removing the sacrificial film from the void formation groove to form a void between the interconnects in the first insulating film. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification