PACKAGED MICROELECTRONIC DEVICES AND METHODS FOR MANUFACTURING PACKAGED MICROELECTRONIC DEVICES

• US 20090302484A1
• Filed: 06/10/2008
• Published: 12/10/2009
• Est. Priority Date: 06/10/2008
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Corisis, David J., Lee, Choon Kuan, Chong, Chin Hui
• Granted Patent: US 7,745,920 B2
• Time in Patent Office: Days
• US Class Current: 257/777
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/29005 Structure
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73207 Bump and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06565 the devices having the same size and there being no auxiliary carrier between the devices
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15184 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member, a first die attached to the support member, and a second die attached to the first die in a stacked configuration. The device can also include an attachment feature between the first and second dies. The attachment feature can be composed of a dielectric adhesive material. The attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.

Claims

1. A packaged microelectronic device, comprising:

a support member;

a first microelectronic die attached to the support member;

a second microelectronic die having an active side and a back side opposite the active side, wherein the second die is attached to the first die in a stacked configuration; and

an attachment feature between the first and second dies and attached to each of the first and second dies, wherein the attachment feature is composed of a dielectric adhesive material, and wherein the attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.

2. The microelectronic device of claim 1 wherein the attachment feature comprises an at least initially generally flexible film attached to the back side of the second die and having a plurality of preformed openings extending completely through the film, and wherein the interconnect structures are formed in at least a portion of the openings.

3. The microelectronic device of claim 1 wherein the attachment feature comprises a film-over-wire die attach film having a plurality of preformed apertures extending completely through the film.

4. The microelectronic device of claim 1 wherein:

the support member includes a first side, a second side opposite the first side, a plurality of support member terminals at the first side, and a plurality of contact pads at the second side and electrically coupled to corresponding support member terminals;

the first die includes a front side facing away from the support member, a back side facing the support member, a plurality of first terminals at the front side of the first die and electrically coupled to corresponding support member terminals with a plurality of wire bonds, and a plurality of second terminals at the front side of the second die and electrically coupled to corresponding interconnect structures of the attachment feature; and

the second die includes a plurality of terminals at the front side of the second die and a plurality of through-substrate interconnects in contact with corresponding terminals and electrically coupling the terminals to the corresponding interconnect structures of the attachment feature.

5. The microelectronic device of claim 4, further comprising a casing covering the first and second microelectronic dies, the attachment feature, the wire bonds, and at least a portion of the support member.

6. The microelectronic device of claim 4 wherein the wire bonds extend through at least a portion of the attachment feature.

7. The microelectronic device of claim 1 wherein the attachment feature comprises an at least initially generally flexible film curable using a heating process.

8. The microelectronic device of claim 1 wherein the first die and the second die each comprise one of a processor, a memory device, an imager, a filter, or a sensor.

9. The microelectronic device of claim 1 wherein the only electrical connection between the second die and the first die is via the interconnect structures of the attachment feature.

10. The microelectronic device of claim 1 wherein:

the second die includes a plurality of terminals proximate to the front side of the second die and a plurality of electrically conductive through-substrate interconnects in contact with the terminals and extending completely through the second die, the individual through-substrate interconnects having a back side portion accessible at the back side of the second die; and

the interconnect structures of the attachment feature are in contact with and electrically coupled to corresponding back side portions of the individual through-substrate interconnects of the second die.

11. The microelectronic device of claim 1 wherein the interconnect structures are composed of at least one of Cu, Ni, Au, palladium, solder, and a conductive polymer.

12. The microelectronic device of claim 1 wherein the interconnect structures are composed of a first conductive layer of Cu, a second conductive layer of Ni over at least a portion of the first layer, and a third layer of Au over at least a portion of the second layer.

13. The microelectronic device of claim 1 wherein the second die has a thickness of between approximately 50 to 100 microns.

14. A microelectronic device, comprising:

a semiconductor substrate including integrated circuitry and bond-pads electrically coupled to the integrated circuitry;

electrically conductive through-substrate interconnects in contact with corresponding bond-pads and having back side portions; and

a dielectric adhesive film at the back side of the semiconductor substrate, wherein the film includes a plurality of preformed apertures at least partially aligned with the back side portions of the through-substrate interconnects, and wherein the film further includes conductive couplers in at least a portion of the apertures and in contact with the corresponding back side portions of the through-substrate interconnects.

15. The microelectronic device of claim 14 wherein the conductive couplers are positioned to electrically couple the through-substrate interconnects to one or more external contacts within the footprint of the semiconductor substrate.

16. The microelectronic device of claim 14 wherein the conductive couplers are composed of one or more layers of a conductive material deposited onto the corresponding back side portions of the through-substrate interconnects, and wherein the conductive material includes at least one of Cu, Ni, Au, palladium, solder, and a conductive polymer.

17. The microelectronic device of claim 14 wherein the film has a first side in contact with the back side of the semiconductor substrate and a second side opposite the first side, and wherein external surfaces of the conductive couplers are at least approximately co-planar with the second side of the film.

18. A system, comprising:

at least one of a processor and a memory device, wherein at least one of the processor and the memory device includes a semiconductor component comprising

an interposer substrate;

a first microelectronic die attached and electrically coupled to the interposer substrate, the first die having an active side, a back side opposite the active side and facing the interposer substrate, integrated circuitry, and a plurality of terminals at the active side and electrically coupled to the integrated circuitry;

a second microelectronic die attached to the first die in a stacked arrangement, the second die having an active side, a back side opposite the active side and facing the first die, integrated circuitry, a plurality of terminals electrically coupled to the integrated circuitry, and a plurality of electrically conductive through-substrate interconnects electrically coupled to the corresponding terminals; and

a connection structure composed of a dielectric adhesive material between the first and second dies, wherein the connection structure is attached to the active side of the first die and the back side of the second die, and wherein the connection structure covers at least approximately all of the back side of the second die and includes a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.

19. The system of claim 18 wherein the connection structure has a thickness less than the first die, the second die, and the support member.

20. The system of claim 18 wherein the first microelectronic die includes a plurality of wire bonds electrically coupling the terminals to the corresponding contacts on the interposer substrate, and wherein connection structure covers at least a portion of the wire bonds.

21-32. -32. (canceled)