MIcro-heaters, methods for manufacturing the same, and methods for forming patterns using the micro-heaters

• US 20090304371A1
• Filed: 10/28/2008
• Published: 12/10/2009
• Est. Priority Date: 06/10/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Junhee
• Granted Patent: US 8,369,696 B2
• Time in Patent Office: Days
• US Class Current: 392/418
• CPC Class Codes: H05B 2214/04 Heating means manufactured by using nanotechnology
• CPC Class Codes: H05B 3/00 Ohmic-resistance heating
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/441 in the presence of solvent vapors, e.g. solvent vapour annealing
• CPC Class Codes: Y10T 29/49083 Heater type

Abstract

Example embodiments relate to micro-heaters, micro-heater arrays, methods for manufacturing the micro-heater, and methods for forming a pattern using the micro-heater. A micro-heater according to example embodiments may include a metal pattern formed on a substrate. A support may be formed beneath the metal pattern, the support securing the metal pattern to the substrate while spacing the metal pattern apart from the substrate. A spacer may be formed on the substrate and adjacent to the metal pattern, a first distance from the substrate to the top surface of the spacer being greater than a second distance from the substrate to the top surface of the metal pattern. The distance between the micro-heater and a target substrate positioned above the metal pattern may be controlled by the spacer, thus allowing the formation of a relatively fine pattern on the target substrate.

Claims

1. A micro-heater comprising:

a metal pattern on a substrate;

a support beneath the metal pattern, the support securing the metal pattern to the substrate while spacing the metal pattern apart from the substrate; and

a spacer on the substrate and adjacent to the metal pattern, a first distance from the substrate to a top surface of the spacer being greater than a second distance from the substrate to a top surface of the metal pattern.

2. The micro-heater according to claim 1, further comprising:

a transfer material on the metal pattern, the transfer material evaporating when the metal pattern is heated.

3. The micro-heater according to claim 2, wherein the transfer material includes an electroluminescent material or a metallic material.

4. The micro-heater according to claim 1, further comprising:

a metal layer on the spacer.

5. The micro-heater according to claim 1, wherein the metal pattern includes one or more of tungsten, molybdenum, and silicon carbide.

6. The micro-heater according to claim 1, wherein the support or the spacer includes one or more of glass and silicon oxide.

7. The micro-heater according to claim 1, further comprising:

a target substrate on the spacer and above the metal pattern.

8. The micro-heater according to claim 7, wherein the target substrate is spaced apart from the spacer.

9. A micro-heater array having two or more micro-heaters of claim 1 arranged in parallel.

16. A method for forming a pattern using the micro-heater according to claim 1, comprising:

forming a transfer material on the metal pattern;

placing a target substrate on the spacer and above the metal pattern; and

applying power to the metal pattern to selectively evaporate and transfer the transfer material from the metal pattern to the target substrate to form the pattern.

17. The method according to claim 16, wherein the target substrate is bonded to the spacer or spaced apart from the spacer.

18. The method according to claim 16, wherein the transfer material includes an electroluminescent material or a metallic material.

19. The method according to claim 16, further comprising:

repeating the method to form a plurality of patterns on the target substrate.

10. A method for manufacturing a micro-heater, comprising:

forming and patterning a heating layer on a substrate;

forming an insulating layer on the substrate, the insulating layer being thicker than the patterned heating layer; and

etching the insulating layer and a portion of the substrate to form a spacer adjacent to the patterned heating layer along with a support positioned between the patterned heating layer and the etched substrate.

11. The method according to claim 10, further comprising:

forming a sacrificial layer on the substrate before forming the heating layer,

wherein forming the spacer and the support includes etching the sacrificial layer.

12. The method according to claim 11, wherein the sacrificial layer includes silicon oxide.

13. The method according to claim 10, further comprising:

forming a metal layer on the insulating layer,

wherein forming the spacer includes etching the metal layer.

14. The method according to claim 10, wherein the heating layer includes one or more of tungsten, molybdenum, and silicon carbide.

15. The method according to claim 10, wherein the insulating layer includes silicon oxide.