APPARATUS AND METHOD FOR LARGE AREA MULTI-LAYER ATOMIC LAYER CHEMICAL VAPOR PROCESSING OF THIN FILMS

• US 20090304924A1
• Filed: 03/03/2006
• Published: 12/10/2009
• Est. Priority Date: 03/03/2006
• Status: Abandoned Application

• Current Assignee: Prasad Gadgil
• Original Assignee: Prasad Gadgil
• Inventors: Gadgil, Prasad
• Application Number:
  US12/281,542
• Publication Number:
  US 20090304924A1
• Time in Patent Office: Days
• US Class Current: 427/255.500
• CPC Class Codes: C23C 16/305 Sulfides, selenides, or tellurides
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes

Abstract

An apparatus and method for large area high speed atomic layer chemical vapor processing wherein continuous and alternating streams of reactive and inert gases are directed towards a co-axially mounted rotating cylindrical susceptor from a plurality of composite nozzles placed around the perimeter of the processing chamber. A flexible substrate is mounted on the cylindrical susceptor. In one embodiment, the process reactor has four composite injectors arranged substantially parallel to the axis of rotation of the cylindrical susceptor. In the other embodiment, the susceptor cross section is a polygon with a plurality of substrates mounted on its facets. The reactor can be operated to process multiple flexible or flat substrates with a single atomic layer precision as well as high-speed chemical vapor processing mode. The atomic layer chemical vapor processing system of the invention also has provisions to capture unused portion of injected reactive chemical precursors downstream.

Claims

1. A thin-film processing apparatus, comprising:

a processing chamber with an exterior wall having an outer periphery and a connected evacuation subsystem;

a plurality of injection nozzles spaced apart around the outer periphery of the exterior wall, individual ones of the injection nozzles penetrating the chamber wall to bring processing gas from outside the chamber to the inside of the chamber, and distributing injected gas substantially in a linear pattern; and

a transport subsystem within the processing chamber carrying one or more substrates to be coated in a manner that the one or more substrates pass in close proximity to the plurality of injection nozzles in a sequential order and repeat the sequential passing while the transport subsystem operates.

2. The apparatus of claim 1 wherein individual ones of the injection nozzles have dedicated evacuation apparatus associated with the individual nozzle to remove excess injected gas in the immediate vicinity of that nozzle during operation.

3. The apparatus of claim 1 wherein the plurality of injection nozzles is a multiple of four, and in the sequential order a first in a set of four nozzles injects a first reactive gas to form a chemisorbed monolayer, a second in the set of four nozzles injects a first inert gas to purge remnant of the first reactive gas, a third in the set of four nozzles injects a second reactive gas to react chemically with the chemisorbed first reactive gas to form a monolayer of a film, and a fourth in the set of four nozzles injects a second inert gas to purge remnant of the second reactive gas. a set of four nozzles coupled with the repeated passage of the substrate in the sequence performing an atomic layer deposition process building a film on the substrate with monolayer precision.

4. The apparatus of claim 3 wherein the multiple is one and the number of nozzles in the sequence is four.

5. The apparatus of claim 1 wherein the chamber is substantially round, the outer periphery is a diameter of the chamber, and the transport subsystem comprises a drum rotating within the substantially round chamber.

6. The apparatus of claim 5 wherein a substrate is a flexible panel wrapped on the drum the drum height and the panel width being substantially equal, and wherein individual ones of the plurality of nozzles in linear extent span substantially the width of the substrate, with the drum rotating to carry a point on the substrate in a direction substantially at a right angle to the linear pattern of injection.

7. The apparatus of claim 1 wherein the chamber has front and a back substantially flat wall portions, and rounded end portions, and the transport subsystem comprises two drums of substantially the same diameter rotating at a common angular velocity.

8. The apparatus of claim 7 wherein the substrate is a flexible panel passing around both drums in a continuous loop, and wherein individual ones of the plurality of nozzles in linear extent span substantially the width of the substrate, with the drum rotating to carry a point on the substrate in a direction substantially at a right angle to the linear pattern of injection.

9. The apparatus of claim 1 wherein the chamber is substantially round, the outer periphery is a diameter of the chamber, and the transport subsystem comprises a drum of polygonal cross-section rotating within the substantially round chamber.

10. The apparatus of claim 9 wherein flat portions of the drum of polygonal cross section carry individual flat substrates.

11. A method for processing a thin film, comprising steps of:

(a) mounting a plurality of injection nozzles spaced apart around the outer periphery of wall of a processing chamber connected to an evacuation subsystem, with individual ones of the injection nozzles penetrating the chamber wall to bring processing gas from outside the chamber to the inside of the chamber, and distributing injected gas substantially in a linear pattern;

(b) Arranging at least one substrate to be coated on a transport subsystem within the processing chamber in a manner that the one or more substrates pass in close proximity to the plurality of injection nozzles in a sequential order and repeat the sequential passing while the transport subsystem operates.

12. The method of claim 11 including evacuating excess injected gas by a dedicated evacuation apparatus at individual ones of the injection nozzles in the immediate vicinity of that nozzle during operation.

13. The method of claim 11 wherein the plurality of injection nozzles is a multiple of four, and in the sequential order a first in a set of four nozzles injects a first reactive gas to form a chemisorbed monolayer, a second in the set of four nozzles injects a first inert gas to purge remnant of the first reactive gas, a third in the set of four nozzles injects a second reactive gas to react chemically with the chemisorbed first reactive gas to form a monolayer of a film, and a fourth in the set of four nozzles injects a second inert gas to purge remnant of the second reactive gas. a set of four nozzles coupled with the repeated passage of the substrate in the sequence performing an atomic layer deposition process building a film on the substrate with monolayer precision.

14. The method of claim 13 wherein the multiple is one and the number of nozzles in the sequence is four.

15. The method of claim 11 wherein the chamber is substantially round, the outer periphery is a diameter of the chamber, and the transport subsystem comprises a drum rotating within the substantially round chamber.

16. The method of claim 15 wherein a substrate is a flexible panel wrapped on the drum the drum height and the panel width being substantially equal, and wherein individual ones of the plurality of nozzles in linear extent span substantially the width of the substrate, with the drum rotating to carry a point on the substrate in a direction substantially at a right angle to the linear pattern of injection.

17. The method of claim 11 wherein the chamber has front and a back substantially flat wall portions, and rounded end portions, and the transport subsystem comprises two drums of substantially the same diameter rotating at a common angular velocity.

18. The method of claim 17 wherein the substrate is a flexible panel passing around both drums in a continuous loop, and wherein individual ones of the plurality of nozzles in linear extent span substantially the width of the substrate, with the drum rotating to carry a point on the substrate in a direction substantially at a right angle to the linear pattern of injection.

19. The method of claim 11 wherein the chamber is substantially round, the outer periphery is a diameter of the chamber, and the transport subsystem comprises a drum of polygonal cross-section rotating within the substantially round chamber.

20. The method of claim 19 wherein flat portions of the drum of polygonal cross section carry individual flat substrates.