LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES
First Claim
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1. A method of manufacturing a microelectromechanical systems (MEMS) device comprising:
- selecting deposition conditions that comprise a deposition temperature that is less than or equal to about 250°
C.; and
depositing a sacrificial layer over an optical stack under the selected deposition conditions, wherein the sacrificial layer comprises amorphous silicon.
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Abstract
Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
41 Citations
47 Claims
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1. A method of manufacturing a microelectromechanical systems (MEMS) device comprising:
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selecting deposition conditions that comprise a deposition temperature that is less than or equal to about 250°
C.; anddepositing a sacrificial layer over an optical stack under the selected deposition conditions, wherein the sacrificial layer comprises amorphous silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. An unreleased MEMS substrate comprising:
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an optical stack; a sacrificial layer comprising amorphous silicon; and a metal layer overlaying and forming an interface with the sacrificial layer; wherein the interface of the sacrificial layer and the metal layer comprises a surface roughness that is effective to reduce stiction between the metal layer and the optical stack after removal of the sacrificial layer to form a cavity. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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Specification