Semiconductor Device And Manufacturing Method Thereof
0 Assignments
0 Petitions
Accused Products
Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
743 Citations
96 Claims
-
1-38. -38. (canceled)
-
39. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a protective film comprising silicon oxide over the gate electrode with the oxide semiconductor film therebetween; forming a second insulating film by sputtering over the oxide semiconductor film and the protective film, the second insulating film comprising silicon and nitrogen. - View Dependent Claims (40, 41, 42, 43, 44)
-
-
45. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a protective film over the gate electrode with the oxide semiconductor film therebetween; forming a second insulating film by sputtering over the oxide semiconductor film and the protective film, the second insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride. - View Dependent Claims (46, 47, 48, 49, 50)
-
-
51. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a source electrode and a drain electrode in contact with the oxide semiconductor film; forming a protective film over the gate electrode with the oxide semiconductor film therebetween; forming a second insulating film by sputtering over the oxide semiconductor film, the protective film, the source electrode and the drain electrode, the second insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59, 60)
-
-
61. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a conductive film on the oxide semiconductor film; etching a portion of the conductive film to form a source electrode and a drain electrode; and forming a second insulating film by sputtering over the oxide semiconductor film, the second insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride, wherein the second insulating film is in contact with a surface of the oxide semiconductor film in a region between the source electrode and the drain electrode. - View Dependent Claims (62, 63, 64, 65)
-
-
66. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a conductive film on the oxide semiconductor film; etching a portion of the conductive film to form a source electrode and a drain electrode; and forming a second insulating film comprising silicon oxide by sputtering over the oxide semiconductor film wherein the second insulating film is in contact with a surface of the oxide semiconductor film in a region between the source electrode and the drain electrode. - View Dependent Claims (67, 68, 69, 70)
-
-
71. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a conductive film on the oxide semiconductor film; etching a portion of the conductive film to form a source electrode and a drain electrode; and forming a second insulating film by sputtering over the oxide semiconductor film, the second insulating film comprising a first film and a second film on the first film, each of the first film and the second film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride, wherein the first film is in contact with a surface of the oxide semiconductor film in a region between the source electrode and the drain electrode. - View Dependent Claims (72, 73, 74, 75, 76)
-
-
77. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; and forming a second insulating film by sputtering over the oxide semiconductor film, the second insulating film comprising silicon oxide and being in contact with at least a portion of the oxide semiconductor film. - View Dependent Claims (78, 79, 80)
-
-
81. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; and forming a second insulating film by sputtering over the oxide semiconductor film, the second insulating film comprising silicon nitride and being in contact with at least a portion of the oxide semiconductor film. - View Dependent Claims (82, 83, 84)
-
-
85. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; and forming a second insulating film by sputtering over the oxide semiconductor film, the second insulating film comprising a material selected from the group consisting of silicon nitride, silicon oxide, silicon nitride oxide, and silicon oxynitride and being in contact with at least a portion of the oxide semiconductor film. - View Dependent Claims (86, 87, 88, 89)
-
-
90. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; and forming a second insulating film by sputtering over the oxide semiconductor film, the second insulating film being in contact with at least a portion of the oxide semiconductor film. - View Dependent Claims (91, 92, 93, 94, 95, 96)
-
Specification