METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20090305467A1
• Filed: 05/28/2009
• Published: 12/10/2009
• Est. Priority Date: 06/06/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: GOTO, Yuugo, FUJII, Teruyuki
• Granted Patent: US 8,053,253 B2
• Time in Patent Office: Days
• US Class Current: 438/125
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/19043 being a resistor
• CPC Class Codes: H01L 2924/30105 Capacitance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

An object is to provide a highly reliable semiconductor device that is reduced in thickness and size and has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield covering a semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit and an antenna electrically connected to the semiconductor integrated circuit;

sandwiching the semiconductor integrated circuit and the antenna between a first insulator and a second insulator which are provided to face each other; and

forming, by a wet plating method, at least two conductive shields electrically connected to each other on surfaces of the first insulator and the second insulator, on the surfaces of which the semiconductor integrated circuit is not formed.

2. The method for manufacturing the semiconductor device according to claim 1, wherein nickel alloy films or copper films are formed as the conductive shields.

3. The method for manufacturing the semiconductor device according to claim 1, wherein a structure body in which a fibrous body is impregnated with an organic resin is used for at least one of the first insulator and the second insulator.

4. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit and an antenna electrically connected to the semiconductor integrated circuit;

sandwiching the semiconductor integrated circuit and the antenna between a first insulator and a second insulator which are provided to face each other; and

immersing a stack of the semiconductor integrated circuit, the antenna, the first insulator, and the second insulator in a plating solution including a conductive material to form a conductive shield covering surfaces of the stack.

5. The method for manufacturing the semiconductor device according to claim 4, wherein a nickel alloy film or a copper film is formed as the conductive shield.

6. The method for manufacturing the semiconductor device according to claim 4, wherein a structure body in which a fibrous body is impregnated with an organic resin is used for at least one of the first insulator and the second insulator.

7. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit and an antenna electrically connected to the semiconductor integrated circuit;

sandwiching the semiconductor integrated circuit and the antenna between a first insulator and a second insulator which are provided to face each other;

immersing a stack of the semiconductor integrated circuit, the antenna, the first insulator, and the second insulator in a solution including a catalyst material, and making the catalyst material adsorbed on surfaces of the stack; and

immersing the stack to which the catalyst material is adsorbed in a plating solution including a conductive material to form a conductive shield covering the surfaces of the stack to which the catalyst material is adsorbed.

8. The method for manufacturing the semiconductor device according to claim 7, wherein palladium is used as the catalyst material.

9. The method for manufacturing the semiconductor device according to claim 7, wherein a nickel alloy film or a copper film is formed as the conductive shield.

10. The method for manufacturing the semiconductor device according to claim 7, wherein a structure body in which a fibrous body is impregnated with an organic resin is used for at least one of the first insulator and the second insulator.

11. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit and an antenna electrically connected to the semiconductor integrated circuit;

sandwiching the semiconductor integrated circuit and the antenna between a first surface of first insulator and a first surface of a second insulator so that a second surface of the first insulator and a second surface of the second insulator are outside; and

forming a first conductive shield on the second surface of the first insulator and a second conductive shield on the second surface of the second insulator by a wet plating method,

wherein the first conductive shield and the second conductive shield are electrically connected to each other.

12. The method for manufacturing the semiconductor device according to claim 11, wherein nickel alloy films or copper films are formed as the conductive shields.

13. The method for manufacturing the semiconductor device according to claim 11, wherein a structure body in which a fibrous body is impregnated with an organic resin is used for at least one of the first insulator and the second insulator.