×

Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology

  • US 20090306941A1
  • Filed: 05/14/2007
  • Published: 12/10/2009
  • Est. Priority Date: 05/15/2006
  • Status: Abandoned Application
First Claim
Patent Images

1. A method comprising:

  • accessing a structure model defining a cross-sectional profile of a structure on a sample, the cross-sectional profile at least partially defined using a set of blocks, each of the blocks including a plurality of vertices, each vertex expressed using at least one algebraic relationship between a plurality of parameters corresponding to the structure;

    evaluating information from the structure model to produce expected metrology data for a scatterometry-based optical metrology;

    accessing measured metrology data, the measured metrology data determined by examining the structure on the sample using the scatterometry-based optical metrology; and

    comparing the expected metrology data and the measured metrology data in order to determine at least one of the plurality of parameters corresponding to the structure.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×