SEMICONDUCTOR PROCESSING APPARATUS WITH IMPROVED THERMAL CHARACTERISTICS AND METHOD FOR PROVIDING THE SAME

• US 20090308315A1
• Filed: 06/13/2008
• Published: 12/17/2009
• Est. Priority Date: 06/13/2008
• Status: Abandoned Application

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: De Ridder, Christianus Gerardus Maria
• Application Number:
  US12/138,909
• Publication Number:
  US 20090308315A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C09D 1/00 Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• CPC Class Codes: C09D 5/004 Reflecting paints; Signal paints
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A semiconductor processing apparatus is disclosed, comprising a process chamber configured to contain a heated, gaseous atmosphere, the apparatus further comprising a number of mechanical parts, at least one of which parts is provided at least partly with a heat reflective, amorphous SiO₂ powder coating. Also disclosed is a method for treating a component of a semiconductor processing apparatus, comprising at least partly providing a surface of the component with an amorphous SiO₂ powder coating, and optionally sealing a surface of the applied coating.

Claims

4-1. Part according to claim 1, wherein a surface of the heat reflective coating has been sealed, for example by means of flame polishing.

13. Method for treating a component of a semiconductor processing apparatus, said apparatus utilizing heated process gases and said component—

during operation—

being exposed to the heated process gases, comprising;

at least partly providing a surface of the component with a coating made of amorphous SiO₂ powder.

14. Method according to claim 13, wherein the surface of the reflective coating is sealed by means of flame polishing.

15. Method according to claim 13, wherein an applied coating has an average reflectivity ≧

0.95 for electromagnetic wave lengths between 250 nm and 2650 nm.

16. Method according to any one of claims 13 to 15, wherein the amorphous SiO₂ powder coating is Quartz-Coat™

850 of Aremco, or Hereus Reflective Coating of Hereus.