SOLAR CELL FABRICATION USING IMPLANTATION
First Claim
1. A solar cell device comprising:
- a silicon substrate including a preexisting dopant included therein;
a homogeneous lightly doped region formed on a surface of the silicon substrate over the preexisting dopant, thereby forming a junction between the preexisting dopant and the lightly doped region;
a heavily doped selectively implanted region on the surface of the silicon substrate within the lightly doped region;
a seed layer formed over the heavily doped region; and
a metal contact formed over the seed layer.
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Accused Products
Abstract
A solar cell device and method of making are provided. The device includes a silicon substrate including a preexisting dopant. A homogeneous lightly doped region is formed on a surface of the silicon substrate to form a junction between the preexisting dopant and the lightly doped region. A heavily doped region is selectively implanted on the surface of the silicon substrate. A seed layer is formed over the heavily doped region. A metal contact is formed over the seed layer. The device can include an anti-reflective coating. In one embodiment, the heavily doped region forms a parabolic shape. The heavily doped regions can each be a width on the silicon substrate a distance in the range 50 to 200 microns. Also, the heavily doped regions can be laterally spaced on the silicon substrate a distance in the range 1 to 3 mm from each other. The seed layer can be a silicide. The silicon substrate can include fiducial markers configured for aligning the placement of the heavily doped regions during an ion implantation process.
174 Citations
45 Claims
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1. A solar cell device comprising:
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a silicon substrate including a preexisting dopant included therein; a homogeneous lightly doped region formed on a surface of the silicon substrate over the preexisting dopant, thereby forming a junction between the preexisting dopant and the lightly doped region; a heavily doped selectively implanted region on the surface of the silicon substrate within the lightly doped region; a seed layer formed over the heavily doped region; and a metal contact formed over the seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a solar cell device comprising the steps of:
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providing a silicon substrate including a preexisting dopant included therein; using an ion implantation process to form a homogeneous lightly doped region on a surface of the silicon substrate over the preexisting dopant, thereby forming a junction between the preexisting dopant and the lightly doped region; using a selective ion implantation process to form a heavily doped region implanted on the surface of the silicon substrate within the lightly doped region, the heavily doped region being implanted at predetermined locations on the silicon substrate surface; using the selective ion implantation process to form a seed layer over the heavily doped region; and using the selective ion implantation process to form a metal contact over the seed layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A solar cell device comprising:
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a silicon substrate including a preexisting dopant included therein; a homogeneous lightly doped region formed on a surface of the silicon substrate over the preexisting dopant, thereby forming a junction between the preexisting dopant and the lightly doped region; a heavily doped region selectively implanted on the surface of the silicon substrate within the lightly doped region, the heavily doped region being as a function of distance from the surface of the silicon substrate; and a metal contact formed over the heavily doped region. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification