FORMATION OF SOLAR CELL-SELECTIVE EMITTER USING IMPLANT AND ANNEAL METHOD
First Claim
1. A method of forming a solar cell, the method comprising:
- providing a semiconducting wafer having a pre-doped region;
performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and
performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation,wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, andwherein the first and second ion implantations are performed independently of one another.
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Accused Products
Abstract
A method of forming a solar cell, the method comprising: providing a semiconducting wafer having a pre-doped region; performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation, wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, and wherein the first and second ion implantations are performed independently of one another.
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Citations
36 Claims
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1. A method of forming a solar cell, the method comprising:
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providing a semiconducting wafer having a pre-doped region; performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation, wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, and wherein the first and second ion implantations are performed independently of one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a solar cell, the method comprising:
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providing a semiconducting wafer having a pre-doped region; forming a homogeneously doped region in the semiconducting wafer over the pre-doped region by performing a first ion implantation of a dopant into the semiconducting wafer, wherein a p-n junction is formed between the pre-doped region and the homogeneously doped region and the homogeneously doped region is configured to generate electron-hole pairs upon receiving light; and forming a plurality of selectively doped regions in the semiconducting wafer over the homogeneously doped region by performing a second ion implantation of a dopant into the semiconducting wafer, wherein the first and second ion implantations are performed independently of one another, and wherein the selectively doped regions have a higher concentration of dopant than the homogeneously doped region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A solar cell comprising:
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a semiconducting wafer having a background doped region; a homogeneously doped region formed in the semiconducting wafer over the background doped region, wherein the homogeneously doped region has a sheet resistance of between approximately 80 Ohms/square and approximately 160 Ohms/square and is formed by ion implanting a dopant into the semiconducting wafer; a p-n junction formed between the homogeneously doped region and the background doped region; a plurality of selectively doped regions formed in the semiconducting wafer over the homogeneously doped region, wherein each one of the selectively doped regions has a sheet resistance of between approximately 10 Ohms/square and approximately 40 Ohms/square and is formed by ion implanting a dopant into the semiconducting wafer; and a plurality of metal contacts disposed on the surface of the semiconducting wafer and aligned over the plurality of selectively doped regions, wherein the plurality of metal contacts is configured to conduct electrical charge from the plurality of selectively doped regions. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification