Nitride Micro Light Emitting Diode With High Brightness and Method For Manufacturing the Same

• US 20090309107A1
• Filed: 08/21/2009
• Published: 12/17/2009
• Est. Priority Date: 08/08/2003
• Status: Active Grant

• Current Assignee: Sang-Kyu Kang
• Original Assignee: Sang-Kyu Kang
• Inventors: Kang, Sang-Kyu
• Granted Patent: US 7,906,787 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO₂, Si₃N₄, DBR(ZrO₂/SiO₂HfO₂/SiO₂), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Claims

1. A nitride micro LED with high brightness which is mounted through a flip-chip method, comprising:

a sapphire substrate;

a plurality of micro-sized luminous pillars having an n-type GaN layer grown on the sapphire substrate, an active layer formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer;

a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars;

a metal electrode formed on a top surface of the gap filling material and the luminous pillars;

a p-type electrode formed on the metal electrode; and

an n-type electrode electrically connected to the n-type GaN layer,

wherein an array of the luminous pillars is driven at the same time.