THERMAL PROCESSING APPARATUS AND THERMAL PROCESSING METHOD FOR OBJECT TO BE PROCESSED

• US 20090311807A1
• Filed: 06/10/2009
• Published: 12/17/2009
• Est. Priority Date: 06/11/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Wang, Wenling, Yamaga, Kenichi
• Granted Patent: US 8,080,767 B2
• Time in Patent Office: Days
• US Class Current: 438/5
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

The present invention is a thermal processing apparatus comprising: a processing vessel capable of being evacuated, the processing vessel also being capable of accommodating, in addition to a plurality of objects, an object for temperature measurement equipped with an elastic wave device; a holding unit configured to be loaded into and unloaded from the processing vessel, while the holding unit holding the plurality of objects to be processed and the object for temperature measurement; a gas introduction unit configured to introduce a gas into the processing vessel; a heating unit configured to heat the plurality of objects to be processed and the object for temperature measurement that are accommodated in the processing vessel; a first conductive member configured to function as a transmitter antenna connected to a transmitter through a radiofrequency line, for transmitting an electric wave for measurement toward the elastic wave device accommodated in the processing vessel; a second conductive member configured to function as a receiver antenna connected to a receiver through a radiofrequency line, for receiving an electric wave dependent on a temperature of the elastic wave device which is emitted from the elastic wave device accommodated in the processing vessel; a temperature analysis part configured to obtain a temperature of the object for temperature measurement based on the electric wave received by the receiver antenna; and a temperature control part configured to control the heating unit; wherein: the first conductive member is disposed as a part of a thermal processing part in the processing vessel; and the second conductive member is disposed as a part of a thermal processing part in the processing vessel.

Claims

1. A thermal processing apparatus comprising:

a processing vessel capable of being evacuated, the processing vessel also being capable of accommodating, in addition to a plurality of objects to be processed, an object for temperature measurement equipped with an elastic wave device;

a holding unit configured to be loaded into and unloaded from the processing vessel, while the holding unit holding the plurality of objects to be processed and the object for temperature measurement;

a gas introduction unit configured to introduce a gas into the processing vessel;

a heating unit configured to heat the plurality of objects to be processed and the object for temperature measurement that are accommodated in the processing vessel;

a first conductive member configured to function as a transmitter antenna connected to a transmitter through a radiofrequency line, for transmitting an electric wave for measurement toward the elastic wave device accommodated in the processing vessel;

a second conductive member configured to function as a receiver antenna connected to a receiver through a radiofrequency line, for receiving an electric wave dependent on a temperature of the elastic wave device which is emitted from the elastic wave device accommodated in the processing vessel;

a temperature analysis part configured to obtain a temperature of the object for temperature measurement based on the electric wave received by the receiver antenna; and

a temperature control part configured to control the heating unit;

wherein;

the first conductive member is disposed as a part of a thermal processing part in the processing vessel; and

the second conductive member is disposed as a part of a thermal processing part in the processing vessel.

2. The thermal processing apparatus according to claim 1, wherein

the radiofrequency line is provided with a radiofrequency filter part that transmits a radiofrequency component but cuts a low frequency component and a direct-current component.

3. The thermal processing apparatus according to claim 1, wherein

the heating unit includes a heating power source and a resistance heater connected to the heating power source through a feeder line.

4. The thermal processing apparatus according to claim 3, wherein

the resistance heater is divided into a plurality of zone heaters to which powers can be individually, controllably supplied, in order to separate an inside space of the processing vessel into a plurality of heating zones.

5. The thermal processing apparatus according to claim 4, wherein

each adjacent two zone heaters are in an electrically conductive state, and a feeder line is connected to each of the zone heaters.

6. The thermal processing apparatus according to claim 4, wherein

each adjacent two zone heaters are in an electrically insulated state, and a feeder line is connected to each of the zone heaters.

7. The thermal processing apparatus according to claim 3, wherein

the first conductive member and/or the second conductive member are/is the resistance heater.

8. The thermal processing apparatus according to claim 3, wherein

the feeder line is provided with a power filter part that transmits a heating-power component but cuts a radiofrequency component.

9. The thermal processing apparatus according to claim 8, wherein

the temperature control part is configured to deliver a heating power to be supplied to the resistance heater and a power for an electric wave for measurement to be emitted from the transmitter in a periodically divided manner.

10. The thermal processing apparatus according to claim 1, wherein:

the holding unit is made of a conductive material; and

the first conductive member and/or the second conductive member are/is the holding unit.

11. The thermal processing apparatus according to claim 1, wherein:

the gas introduction unit is made of a conductive material; and

the first conductive member and/or the second conductive member are/is the gas introduction unit.

12. The thermal processing apparatus according to claim 10, wherein

the first conductive member and/or the second conductive member are/is made of a semiconducting material.

13. The thermal processing apparatus according to claim 12, wherein:

the semiconducting material is one material that is selected from a group consisting of polysilicon, single crystal silicon, SiC, SiGe, GaN, ZnO, AlN, and GaAs.

26. The thermal processing apparatus according to claim 1, wherein:

a plurality of elastic wave devices are disposed on the object for temperature measurement; and

frequency bands of the elastic wave devices are set differently from each other.

27. The thermal processing apparatus according to claim 26, wherein

the elastic wave devices are disposed on the object for temperature measurement at least at a central portion thereof and at a peripheral portion thereof.

28. The thermal processing apparatus according to claim 4, wherein

the object for temperature measurement comprises a plurality of objects for temperature measurement that are arranged correspondingly to the respective heating zones.

29. The thermal processing apparatus according to claim 28, wherein

frequency bands of the elastic wave devices of the objects for temperature measurement are set differently from each other for the respective heating zones.

30. The thermal processing apparatus according to claim 1, wherein

the first conductive member and the second conductive member are integrated to each other, so that a function of the transmitter antenna and a function of the receiver antenna are integrated to each other as a function of a transmitter-receiver antenna.

31. The thermal processing apparatus according to claim 1, wherein:

the processing vessel is provided with a plasma generating unit configured to generate a plasma by a radiofrequency power so as to assist a thermal process to the objects to be processed; and

a frequency band of the electric wave for measurement is set differently from a frequency of the radiofrequency power.

32. The thermal processing apparatus according to claim 1, wherein:

the processing vessel is provided with a plasma generating unit configured to generate a plasma by a radiofrequency power so as to assist a thermal process to the objects to be processed; and

when the electric wave for measurement is transmitted and received, generation of plasma is temporarily suspended.

33. The thermal processing apparatus according to claim 1, wherein

the elastic wave device is selected from a surface elastic wave device, a bulk elastic wave device, and a boundary elastic wave device.

34. The thermal processing apparatus according to claim 1, wherein

the elastic wave device is a substrate device made of one material that is selected from a group consisting of lanthanum tantalic acid gallium aluminium (LTGA), quartz (SiO₂), zinc oxide (ZnO), Rochelle salt (sodium potassium tartrate:

KNaC₄H₄O₅), lead zirconate titanate (PZT;

pb(Zr, Ti)O₃), lithium niobate (LiNbO₃), lithium tantalum acid (LiTaO₃), lithium tetraborate (Li₂B₄O₇), langasite (La₃Ga₅SiO₁₄), aluminium nitride, tourmaline, and poly vinylidene fluoride (PVDF).

35. The thermal processing apparatus according to claim 1, wherein

the temperature control part controls the heating unit based on one of an output from the temperature analysis part, an output from the temperature measuring unit, and an output from a previously stored thermal model, or a combination thereof.

36. The thermal processing apparatus according to claim 1, further comprising

a storage part configured to store an output from the temperature analysis part.

37. The thermal processing apparatus according to claim 1, further comprising

a displaying part configured to display an output from the temperature analysis part.

14. A thermal processing apparatus comprising:

a processing vessel capable of being evacuated, the processing vessel also being capable of accommodating, in addition to a plurality of objects to be processed, an object for temperature measurement equipped with an elastic wave device;

a holding unit configured to be loaded into and unloaded from the processing vessel, while the holding unit holding the plurality of objects to be processed and the object for temperature measurement;

a gas introduction unit configured to introduce a gas into the processing vessel;

a heating unit configured to heat the plurality of objects to be processed and the object for temperature measurement that are accommodated in the processing vessel;

a first conductive member configured to function as a transmitter antenna connected to a transmitter through a radiofrequency line, for transmitting an electric wave for measurement toward the elastic wave device accommodated in the processing vessel;

a second conductive member configured to function as a receiver antenna connected to a receiver through a radiofrequency line, for receiving an electric wave dependent on a temperature of the elastic wave device which is emitted from the elastic wave device accommodated in the processing vessel;

a temperature analysis part configured to obtain a temperature of the object for temperature measurement based on the electric wave received by the receiver antenna;

a temperature control part configured to control the heating unit; and

a temperature measuring unit disposed in the processing vessel and/or on the heating unit;

wherein;

the first conductive member is disposed as a part of the temperature measuring unit; and

the second conductive member is disposed as a part of the temperature measuring unit.

15. The thermal processing apparatus according to claim 14, wherein

the radiofrequency line is provided with a radiofrequency filter part that transmits a radiofrequency component but cuts a low frequency component and a direct-current component.

16. The thermal processing apparatus according to claim 15, wherein

the heating unit includes a heating power source and a resistance heater connected to the heating power source through a feeder line.

17. The thermal processing apparatus according to claim 16, wherein

the resistance heater is divided into a plurality of zone heaters to which powers can be individually, controllably supplied, in order to separate an inside space of the processing vessel into a plurality of heating zones.

18. The thermal processing apparatus according to claim 17, wherein

each adjacent two zone heaters are in an electrically conductive state, and a feeder line is connected to each of the zone heaters.

19. The thermal processing apparatus according to claim 17, wherein

each adjacent two zone heaters are in an electrically insulated state, and a feeder line is connected to each of the zone heaters.

20. The thermal processing apparatus according to claim 16, wherein

the feeder line is provided with a power filter part that transmits a heating-power component but cuts a radiofrequency component.

21. The thermal processing apparatus according to claim 14, wherein:

the temperature measuring unit includes a thermocouple; and

the first conductive member and/or the second conductive member are/is the thermocouple.

22. The thermal processing apparatus according to claim 21, wherein

a thermocouple line connected to the thermocouple is provided with a direct-current filter part that transmits a direct-current component but cuts a radiofrequency component.

23. The thermal processing apparatus according to claim 21, wherein:

the temperature measuring unit includes a protective tube made of a conductive material, for accommodating the thermocouple to protect the same; and

the first conductive member and/or the second conductive member are/is the protective tube.

24. The thermal processing apparatus according to claim 23, wherein

the first conductive member and/or the second conductive member are made of a semiconducting material.

25. The thermal processing apparatus according to claim 24, wherein

the semiconducting material is one material that is selected from a group consisting of polysilicon, single crystal silicon, SiC, SiGe, GaN, ZnO, AlN, and GaAs.

38. A thermal processing method for an object to be processed in which a holding unit holding an object for temperature measurement equipped with an elastic wave device and a plurality of objects to be processed is loaded into a processing vessel, and the objects to be processed are heated by a heating unit so as to be thermally processed, the thermal processing method comprising:

transmitting an electric wave for measurement from a transmitter antenna disposed on the processing vessel to the object for temperature measurement;

receiving an electric wave emitted by the elastic wave device of the object for temperature measurement after the elastic wave device has received the electric wave for measurement, by an receiver antenna disposed on the processing vessel;

obtaining a temperature of the object for temperature measurement based on the electric wave received by the receiver antenna; and

controlling the heating unit based on the obtained temperature.

39. The thermal processing method according to claim 38, wherein:

an inside space of the processing vessel is divided into a plurality of heating zones;

the object for temperature measurement comprises a plurality of objects for temperature measurement that are arranged correspondingly to the respective heating zones; and

frequency bands of the elastic wave devices of the objects for temperature measurement are set differently from each other.

40. The thermal processing method according to claim 38, wherein:

a thermocouple for temperature measurement is disposed in the processing vessel and/or on the heating unit;

when the heating unit is controlled, the heating unit is controlled by referring not only to the measured temperature of the object for temperature measurement but also to a temperature value measured by the thermocouple.

41. The thermal processing method according to claim 38, further comprising processing the objects to be processed by a plasma generated by a radiofrequency power so as to assist the thermal process to the objects to be processed,

wherein a frequency band of the electric wave for measurement is set differently from a frequency of the radiofrequency power.

42. A storage medium storing a computer program executable on a computer, wherein

the computer program incorporates steps for performing the thermal processing method according to claim 38.