SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF
First Claim
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1. A manufacturing method of a surface emitting laser comprising the steps of:
- forming a lower Bragg reflector by forming a plurality of semiconductor layers on top of a semiconductor substrate comprising alternately stacked layers of a first semiconductor and layers of a second semiconductor and an uppermost layer formed of a third semiconductor;
forming a resonator by performing the steps of forming a lower semiconductor layer on top of the lower Bragg reflector, forming an active layer on top of the lower semiconductor layer, and forming an upper semiconductor layer on top of the active layer;
forming an upper Bragg reflector by forming a plurality of semiconductor layers comprising a lowermost layer formed of the third semiconductor and alternately stacked layers of the first semiconductor and layers of the second semiconductor;
forming etching grooves reaching the uppermost layer of the plurality of semiconductor layers of the lower Bragg reflector by etching at least the plurality of semiconductor layers in the upper Bragg reflector, the upper semiconductor layer, the active layer, and the lower semiconductor layer; and
forming air gaps in the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector and in the lowermost layer among the plurality of semiconductor layers of the upper Bragg reflector, respectively, by etching the uppermost and lowermost layers in a lateral direction from the etching grooves; and
forming insulating layers having apertures, which are smaller than the respective air gaps, by selectively oxidizing at least parts of the respective upper and lower semiconductor layers.
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Abstract
A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.
4 Citations
8 Claims
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1. A manufacturing method of a surface emitting laser comprising the steps of:
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forming a lower Bragg reflector by forming a plurality of semiconductor layers on top of a semiconductor substrate comprising alternately stacked layers of a first semiconductor and layers of a second semiconductor and an uppermost layer formed of a third semiconductor; forming a resonator by performing the steps of forming a lower semiconductor layer on top of the lower Bragg reflector, forming an active layer on top of the lower semiconductor layer, and forming an upper semiconductor layer on top of the active layer; forming an upper Bragg reflector by forming a plurality of semiconductor layers comprising a lowermost layer formed of the third semiconductor and alternately stacked layers of the first semiconductor and layers of the second semiconductor; forming etching grooves reaching the uppermost layer of the plurality of semiconductor layers of the lower Bragg reflector by etching at least the plurality of semiconductor layers in the upper Bragg reflector, the upper semiconductor layer, the active layer, and the lower semiconductor layer; and forming air gaps in the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector and in the lowermost layer among the plurality of semiconductor layers of the upper Bragg reflector, respectively, by etching the uppermost and lowermost layers in a lateral direction from the etching grooves; and forming insulating layers having apertures, which are smaller than the respective air gaps, by selectively oxidizing at least parts of the respective upper and lower semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Current AssigneeInternational Business Machines Corporation
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Original AssigneeInternational Business Machines Corporation
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InventorsNakagawa, Shigeru
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/29
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CPC Class CodesB82Y 20/00 Nanooptics, e.g. quantum op...H01S 2301/163 Single longitudinal modeH01S 5/18311 using selective oxidationH01S 5/18316 Airgap confinedH01S 5/1833 with more than one structureH01S 5/18347 Mesa comprising active layerH01S 5/18363 comprising air layersH01S 5/2081 using special etching techn...H01S 5/3432 the whole junction comprisi...
