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METHOD TO FORM ULTRA HIGH QUALITY SILICON-CONTAINING COMPOUND LAYERS

  • US 20090311857A1
  • Filed: 08/24/2009
  • Published: 12/17/2009
  • Est. Priority Date: 07/19/2002
  • Status: Active Grant
First Claim
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1. A method for semiconductor processing, comprising:

  • providing a substrate in a deposition chamber;

    depositing a film of an insulating silicon compound on the substrate by performing a plurality of chemical vapor deposition cycles, each cycle comprising;

    pyrollizing a silicon source with a substrate to form a silicon film, wherein the silicon source pyrollizes upon contact with the substrate, and wherein the silicon source for forming a first silicon film on the substrate, in a first performance of a cycle of the plurality of cycles, is trisilane; and

    subsequently reacting the silicon film to form the insulating silicon compound,wherein the film of the insulating silicon compound formed by performing the plurality of deposition cycles has a thickness non-uniformity of about 5% or less and a step coverage of about 80% or greater.

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