SHOWER PLATE AND MANUFACTURING METHOD THEREOF, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE

• US 20090311869A1
• Filed: 07/18/2007
• Published: 12/17/2009
• Est. Priority Date: 07/20/2006
• Status: Abandoned Application

• Current Assignee: National University Corporation Chiba University, Tokyo Electron Limited
• Original Assignee: National University Corporation Chiba University, Tokyo Electron Limited
• Inventors: Ohmi, Tadahiro, Goto, Tetsuya, Ishibashi, Kiyotaka, Okesaku, Masahiro
• Application Number:
  US12/374,405
• Publication Number:
  US 20090311869A1
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.

Claims

1. A shower plate disposed in a plasma processing apparatus and provided with a plurality of gas discharge holes for discharging a plasma excitation gas to generate plasma in the apparatus,

wherein at least one gas discharge hole is provided in ceramics members, each being installed in each of a multiplicity of vertical holes opened in the shower plate, and an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20.

2. The shower plate of claim 1, wherein the diameter of the gas discharge hole is equal to or less than twice a sheath thickness of the plasma generated directly under the shower plate, and the length of the gas discharge hole is longer than a mean free path of electrons in a processing chamber.

3. The shower plate of claim 1, wherein end portions at a gas introducing side of the vertical hole is chamfered.

4. The shower plate of claim 1, wherein the vertical hole has different diameters in a length direction thereof.

5. The shower plate of claim 4, wherein a diameter of a gas introducing side of the vertical hole is larger than a diameter of a gas discharging side thereof.

6. The shower plate of claim 4, wherein a diameter of a gas introducing side of the vertical hole is smaller than a diameter of a gas discharging side thereof.

7. The shower plate of claim 4, wherein the ceramics member is installed at both a large-diameter portion and a small-diameter portion of the vertical hole.

8. The shower plate of claim 1, wherein an end surface of a gas discharging side of the ceramics member is approximately on the same plane as a surface of a gas discharging side of the shower plate.

9. The shower plate of claim 8, wherein an end surface of a gas introducing side of the ceramics member is in the inside of the vertical hole.

10. The shower plate of claim 9, wherein a porous ceramics member is installed at a gas introducing side from the end surface of the gas introducing side of the ceramics member and in the inside the vertical hole.

11. The shower plate of claim 1, wherein a number of gas discharge holes is provided in each ceramics member.

12. The shower plate of claim 6, wherein a first ceramics member is installed in a small-diameter portion of the gas introducing side of the vertical hole;

a second ceramics member is installed in a large-diameter portion of the gas discharging side of the vertical hole;

a recess is provided at a gas introducing side of the second ceramics member;

the plasma excitation gas discharged from gas discharge holes of the first ceramics member is diffused into and filled in the recess and then is discharged into the plasma processing apparatus from gas discharge holes of the second ceramics member; and

the number of the gas discharge holes of the second ceramics member is larger than the number of the gas discharge holes of the first ceramics member.

14. A plasma processing apparatus including a shower plate as claimed in claim 1.

15. A plasma processing method comprising:

supplying a plasma excitation gas into a plasma processing apparatus by using a shower plate as claimed in claim 1;

generating plasma by exciting the supplied plasma excitation gas by microwave; and

performing oxidation, nitridation, oxynitridation, CVD, etching or plasma irradiation on a substrate by using the plasma.

16. An electronic device manufacturing method comprising a process for processing a substrate by a plasma processing method as claimed in claim 15.

13. A manufacturing method for a shower plate comprising:

inserting a green body, a debound body, a tentatively sintered body or a sintered body of a ceramics member having one or more gas discharge holes into a vertical hole of a green body, a debound body or a tentatively sintered body of a shower plate having the vertical hole formed by molding raw material powder, and then sintering them at the same time.