SELF-COOLED VERTICAL ELECTRONIC COMPONENT

• US 20090314008A1
• Filed: 08/31/2009
• Published: 12/24/2009
• Est. Priority Date: 11/18/2004
• Status: Active Grant

• Current Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Inventors: MORAND, JEAN-LUC
• Granted Patent: US 8,166,769 B2
• Time in Patent Office: Days
• US Class Current: 62/3.200
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device

Abstract

A self-cooled electronic component comprising a vertical monolithic circuit, in which the vertical monolithic circuit is electrically connected in series with a Peltier cooler so that the D.C. current flowing through the circuit supplies the cooler and in which the circuit and the cooler are placed against each other so that the cold surface of the cooler is in thermal contact with the circuit.

Claims

1. A self-cooled electronic component comprising:

a Peltier cooler; and

a vertical monolithic circuit formed in a first semiconductor substrate, the circuit comprising a one-way component, and the circuit being electrically connected in series with the Peltier cooler such that a D.C. current flowing through the circuit supplies the cooler, wherein the circuit and the cooler are placed against each other so that a cold surface of the cooler is in thermal contact with the circuit;

wherein the Peltier cooler comprises an odd number of concentric regions of a second thermoelectric semiconductor material, of alternating conductivity types, laterally isolated, and electrically connected in series, a surface of a central region corresponding to a first terminal, and an opposite surface of an external region corresponding to a second terminal.

2. The self-cooled electronic component of claim 1, wherein the one-way component comprises a high-voltage one-way component.

3. The self-cooled electronic component of claim 1, wherein the central, ring-shaped, and peripheral regions are the same depth.

4. The self-cooled electronic component of claim 1, wherein the cooler comprises three concentric regions:

(1) the central region being of a first conductivity type;

(2) a ring-shaped region of a second conductivity type extending around the central region and electrically and thermally laterally isolated from the central region; and

(3) the external region, the external region comprising a peripheral region of the first conductivity type extending around the ring-shaped region and electrically and thermally laterally isolated from the ring-shaped region;

the central, ring-shaped, and peripheral regions being of substantially the same depth;

the central and ring-shaped regions being thermally and electrically interconnected by a metal plate on a first hot or cold surface of the cooler; and

the ring-shaped and peripheral regions being thermally and electrically interconnected by a ring-shaped metal plate on a second cold or hot side of the cooler.

5. The self-cooled electronic component of claim 4, wherein the central region is integral with a first current input/output metallization;

and wherein the peripheral region is integral with a second current input/output metallization, the first and second current input/output metallizations being formed on opposite surfaces of the cooler, and being electrically isolated from the nearest of the metal plate that interconnects the central region to the ring-shaped region and the metal plate that interconnects the ring-shaped region to the peripheral region.

6. The self-cooled electronic component of claim 5, wherein current coming from the circuit enters the cooler through the first metallization and comes out through the second metallization, the first conductivity type being type P and the second conductivity type being type N.

7. The self-cooled electronic component of claim 5, wherein the second current input/output metallization comprises a full-plate metallization extending over the entire surface of the metal plate that interconnects the central region to the ring-shaped region, and wherein the full-plate metallization is electrically isolated form said metal interconnection plate.

8. The self-cooled electronic component of claim 4, wherein the metal plate is a central metal plate.

9. A Peltier cooler in combination with a vertical monolithic circuit, the combination comprising;

a vertical monolithic circuit formed in first semiconductor substrate material, the vertical monolithic circuit comprising a one-way component; and

a Peltier cooler comprising an odd number of concentric regions of alternating conductive types of a second thermoelectric semiconductor material, the regions being laterally isolated and electrically connected in series, a surface of a central region corresponding to a first terminal, the first terminal being in direct contact with a portion of the vertical monolithic circuit, and an opposite surface of an external region corresponding to a second terminal;

wherein the vertical monolithic circuit supplies a current to the Peltier cooler.

10. The combination of claim 9, wherein the one-way component comprises a high-voltage one-way component.

11. A Peltier cooler in combination with a vertical monolithic circuit, the combination comprising:

a vertical monolithic circuit formed in a first semiconductor substrate material, the vertical monolithic circuit comprising a one-way component; and

a Peltier cooler comprising;

a central region of a first conductivity type of a thermoelectric semiconductor material which is separate from the first semiconductor material, the central region being adapted to being placed against at least a portion of a main surface of a vertical monolithic circuit;

a ring-shaped region of a second conductivity type of a thermoelectric semiconductor material which is separate from the first semiconductor material, the ring-shaped region extending around the central region and being laterally electrically and thermally isolated from the central region; and

a peripheral region of the first conductivity type of a thermoelectric semiconductor material which is separate from the first semiconductor material, the peripheral region extending around the ring-shaped region and being electrically and thermally laterally isolated from the ring-shaped region;

the central, ring-shaped, and peripheral regions being of substantially the same depth;

the central and ring-shaped regions being thermally and electrically interconnected by a central metal plate on a first hot or cold side of the cooler; and

the ring-shaped and peripheral regions being thermally and electrically interconnected by a ring-shaped metal plate on a second cold or hot side of the cooler;

wherein the vertical monolithic circuit supplies a current to the Peltier cooler.

12. The combination of claim 11 wherein the one-way component comprises a high-voltage one-way component.

13. The Peltier cooler of claim 11, wherein a surface of the central region corresponds to a first terminal, and a surface of the peripheral region corresponds to a second terminal.

14. The Peltier cooler of claim 11, wherein the central region, the ring-shaped region and the peripheral region comprise concentric regions.

15. A method of cooling a vertical monolithic circuit comprising:

placing a cooling surface of a Peltier cooler into thermal contact with a vertical monolithic circuit which has been formed separately from the Peltier cooler, the vertical monolithic circuit comprising a one-way component;

supplying a current from the circuit to the cooler by;

running the current from a first surface metallization of the circuit, through a front central electrically and thermally conductive plate of the cooler, through a central region having a first conductivity type, and to a rear electronically and thermally conductive plate;

further running the current from the rear plate, through a ring-shaped region having a second conductivity type, the ring-shaped region being laterally isolated, both thermally and electrically, from the central region, and into a ring-shaped electrically and thermally conductive plate;

further running the current from the ring-shaped plate, through a second ring-shaped region having the first conductivity type, the ring-shaped region being peripheral to the ring-shaped plate, and into a second surface metallization;

wherein the current path results in a removal of heat energy from the front central plate.

16. The method of claim 15, wherein the first conductivity type is P-type and the second conductivity type is N-type.

17. The method of claim 16, wherein the current is run through a central p-type region, a ring-shaped n-type region, and a ring-shaped p-type region having substantially the same depth.

18. The method of claim 15, wherein the one-way component comprises a high-voltage one-way component.