Solar Cell Production Using Non-Contact Patterning And Direct-Write Metallization
First Claim
1. A method for producing a photovoltaic device, the photovoltaic device including a semiconductor wafer, one or more doped regions formed in a surface of the semiconductor wafer, and a plurality of conductive lines disposed over the surface of the semiconductor wafer and contacting said one or more doped regions, the method comprising:
- forming a blanket passivation layer on the surface of the semiconductor wafer;
utilizing a non-contact patterning apparatus to define a plurality of openings through the passivation layer, whereby each said opening exposes a corresponding one of said one or more regions on the surface of the semiconductor wafer; and
utilizing a direct-write metallization apparatus to deposit a contact portion of said conductive lines into each of the plurality of openings.
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Abstract
Photovoltaic devices (i.e., solar cells) are formed using non-contact patterning apparatus (e.g., a laser-based patterning systems) to define contact openings through a passivation layer, and direct-write metallization apparatus (e.g., an inkjet-type printing or extrusion-type deposition apparatus) to deposit metallization into the contact openings and over the passivation surface. The metallization includes two portions: a contact (e.g., silicide-producing) material is deposited into the contact openings, then a highly conductive metal is deposited on the contact material and between the contact holes. The device wafers are transported between the patterning and metallization apparatus in hard tooled registration using a conveyor mechanism. Optional sensors are utilized to align the patterning and metallization apparatus to the contact openings. An extrusion-type apparatus is used to form grid lines having a high aspect central metal line that is supported on each side by a transparent material.
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Citations
20 Claims
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1. A method for producing a photovoltaic device, the photovoltaic device including a semiconductor wafer, one or more doped regions formed in a surface of the semiconductor wafer, and a plurality of conductive lines disposed over the surface of the semiconductor wafer and contacting said one or more doped regions, the method comprising:
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forming a blanket passivation layer on the surface of the semiconductor wafer; utilizing a non-contact patterning apparatus to define a plurality of openings through the passivation layer, whereby each said opening exposes a corresponding one of said one or more regions on the surface of the semiconductor wafer; and utilizing a direct-write metallization apparatus to deposit a contact portion of said conductive lines into each of the plurality of openings. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A front surface contact-type photovoltaic device comprising a semiconductor wafer, a passivation layer formed on a surface of the semiconductor wafer, and a plurality of grid lines formed on the passivation layer and connected by contact portions extending through openings in the passivation layer to a surface of the semiconductor wafer,
wherein each grid line comprises an elongated metal structure having a relatively small width and a relatively large height extending upward from the passivation layer, and at least one support portion formed along a side edge of the metal line, and wherein the support portion comprises a transparent material.
Specification