METHOD AND SYSTEM FOR DIRECTIONAL GROWTH USING A GAS CLUSTER ION BEAM

• US 20090314954A1
• Filed: 06/24/2008
• Published: 12/24/2009
• Est. Priority Date: 06/24/2008
• Status: Active Grant

• Current Assignee: TEL Manufacturing and Engineering of America, Inc. (Tokyo Electron Limited)
• Original Assignee: TEL Epion Inc. (Tokyo Electron Limited)
• Inventors: Hautala, John J., Tabat, Martin D.
• Granted Patent: US 7,905,199 B2
• Time in Patent Office: Days
• US Class Current: 250/424
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: H01J 2237/0812 Ionized cluster beam [ICB] sources

Abstract

A method for growing material on a substrate is described. The method comprises directionally growing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor for the thin film, wherein the growth occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and growth is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.

Claims

1. A method for growing material on a substrate having a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane and one or more second surfaces lying substantially perpendicular to said first plane, the method comprising:

directing a gas cluster ion beam (GCIB) formed from a source of precursor for a thin film toward said substrate with a direction of incidence; and

orienting said substrate relative to said direction of incidence such that said first plane is substantially perpendicular to said direction of incidence to directionally grow said thin film on said one or more first surfaces oriented substantially perpendicular to said direction of incidence, while substantially avoiding growth of said thin film on said one or more second surfaces oriented substantially parallel to said direction of incidence,

wherein said growth of said thin film comprises constituents from said source of precursor and constituents from said substrate.

2. The method of claim 1, wherein said directing said GCIB further comprises:

generating said GCIB in a reduced-pressure environment from a pressurized gas mixture having said source of precursor;

selecting a beam acceleration potential;

selecting a beam dose;

accelerating said GCIB according to said beam acceleration potential; and

irradiating said accelerated GCIB onto said substrate according to said beam dose.

3. The method of claim 2, further comprising:

modifying said beam acceleration potential to alter an amount of said thin film grown on said one or more first surfaces.

4. The method of claim 2, further comprising:

filtering said GCIB to substantially reduce the number of clusters having 100 or less atoms or molecules or both.

5. The method of claim 2, further comprising:

modifying a beam energy distribution to change a thickness of said thin film, or a surface roughness of said thin film, or both.

6. The method of claim 5, wherein said modifying said beam energy distribution comprises broadening said beam energy distribution to decrease said surface roughness of said thin film, or narrowing said beam energy distribution to increase said surface roughness of said thin film.

7. The method of claim 2, further comprising:

wherein a thickness of said thin film that is formed on said one or more first surfaces is achieved by selecting a GCIB dose.

8. The method of claim 2, further comprising:

adjusting the orientation of said substrate relative to said direction of incidence to directionally grow said thin film on one or more of said plurality of surfaces different than said one or more first surfaces.

9. The method of claim 2, further comprising:

directing another gas cluster ion beam (GCIB) formed from another source of precursor for another thin film with said direction of incidence to directionally grow said another thin film on said one or more first surfaces of said substrate, wherein the material composition of said another thin film is different than the material composition of said thin film.

10. The method of claim 2, wherein said pressurized gas mixture comprises O₂, N₂, NO, NO₂, N₂O, CO, or CO₂, or any combination of two or more thereof.

11. The method of claim 1, further comprising:

annealing said thin film.

12. The method of claim 1, further comprising:

directionally growing said thin film within a trench or a via formed on said substrate.

13. The method of claim 1, further comprising:

directionally growing said thin film on one of said one or more first surfaces that abuts a film stack.

14. The method of claim 1, further comprising:

directionally growing said thin film on said one or more first surfaces by oxidizing at least one of said one or more first surfaces.

16. The method of claim 1, further comprising:

directionally growing said thin film on said one or more first surfaces by nitriding at least one of said one or more first surfaces.

18. The method of claim 1, further comprising:

directionally growing said thin film on said one or more first surfaces by forming an oxynitride of at least one of said one or more first surfaces.

19. The method of claim 18, wherein said source of precursor for said thin film comprises O₂, N₂, NO, NO₂, or N₂O, or any combination of two or more thereof.

20. The method of claim 1, further comprising:

directionally growing said thin film on said one or more first surfaces by forming a germanide of at least one of said one or more first surfaces.

21. The method of claim 1, further comprising:

directionally growing said thin film on an electronic device selected from the group consisting of an interconnect structure, a transistor, or a capacitor.

22. The method of claim 1, further comprising:

directionally growing said thin film on a micro-electromechanical device or a nano-electromechanical device.

15. (canceled)

17. (canceled)