ATOMIC LAYER DEPOSITION FOR FUNCTIONALIZING COLLOIDAL AND SEMICONDUCTOR PARTICLES

• US 20090315016A1
• Filed: 06/16/2009
• Published: 12/24/2009
• Est. Priority Date: 06/17/2008
• Status: Active Grant

• Current Assignee: UChicago Argonne LLC (University of Chicago)
• Original Assignee: UChicago Argonne LLC (University of Chicago)
• Inventors: ELAM, Jeffrey W., Guyot-Sionnest, Philippe
• Granted Patent: US 8,012,860 B2
• Time in Patent Office: Days
• US Class Current: 257/15
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02557 Sulfides
• CPC Class Codes: H01L 21/0256 Selenides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/22 including, apart from doping materials or other impurities, only AIIBVI compounds
• CPC Class Codes: H01L 29/2203 Cd X compounds being one element of the 6th group of the Periodic Table H01L29/2206 takes precedence
• CPC Class Codes: H01L 29/225 in different semiconductor regions , e.g. heterojunctions

Abstract

A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.

Claims

1. A method for preparing a functionalized nanocomposite, comprising:

providing an atomic layer deposition (ALD) system;

providing a colloidal quantum dot array comprising a semiconductor material;

providing a first precursor reactive with the semiconductor material, the first precursor comprising at least one of a metal and a metal compound, and the first precursor selected to modify at least one of an electrical and an optical property of the colloidal quantum dot array; and

exposing the colloidal quantum dot array to the first precursor within the ALD system for a first period, thereby depositing a monolayer of the first precursor over at least a portion of the semiconductor material to form a nanocomposite comprising an inorganic surface disposed over at least a portion of the semiconductor material.

2. The method of claim 1, further comprising:

providing a second precursor;

reacting the second precursor with the first precursor deposited over at least a portion of the semiconductor material for a second period; and

repeating alternating exposures of the colloidal quantum dot array to the first precursor and reaction of the second precursor with the first precursor to obtain a desired thickness of the inorganic surface disposed over at least a portion of the semiconductor material.

3. The method of claim 2, wherein the second precursor is selected from the group consisting of:

H₂O and H₂S

4. The method of claim 1, wherein the metal is selected from the group consisting of:

Al, Cd, Pb and Zn.

5. The method of claim 1, wherein the semiconductor comprises CdSe.

6. The method of claim 1, wherein the electrical property is selected from the group consisting of:

dark current, photocurrent and photoconductivity.

7. The method of claim 6, wherein the nanocomposite is characterized by a photoconductivity of at least 50×

the photoconductivity of the semiconductor material.

10. The method of claim 1, further comprising treating the colloidal quantum dot array with ammonium hydroxide to remove at least a portion of hydrocarbon material disposed within the interstices of the colloidal quantum dot array.

8. The method of 1, wherein the electrical property is selected from the group consisting of:

photoresponse, photoluminescence and index of refraction.

9. The method of claim 8, wherein the nanocomposite is characterized by a photoresponse time at least 1000×

faster than the photoresponse time of the semiconductor material.

11. A functionalized nanocomposite having enhanced electro-optical properties comprising:

a semiconductor nanocrystal substrate and an inorganic conformal film deposited over at least a portion of the substrate via monolayer deposition, the inorganic film comprising a metal, wherein the nanocomposite is characterized by an enhancement of at least one of an electrical property and an optical property relative to the respective electrical property and optical property of the semiconductor nanocrystal substrate.

12. The functionalized nanocomposite of claim 11, wherein the semiconductor nanocrystal substrate comprises CdSe.

13. The functionalized nanocomposite of claim 11, wherein the metal is selected from the group consisting of:

Al, Cd, Pb and Zn.

14. The functionalized nanocomposite of claim 13, wherein the inorganic film comprises at least one of a metal oxide and a metal sulfide.

15. The functionalized nanocomposite of claim 11, wherein the nanocomposite is characterized by a photoconductivity at least 50×

the photoconductivity of the semiconductor nanocrystal.

16. The functionalized nanocomposite of claim 11, wherein the nanocomposite is characterized by a photoresponse time at least 1000×

faster than the photoresponse time of the semiconductor nanocrystal.

17. A method for enhancing an electro-optical property of a nanocrystal semiconductor, comprising:

providing a nanocrystal semiconductor substantially free of interstitial contaminates;

providing a first precursor, the first precursor comprising at least one of a gas-phase metal and a metal compound;

providing a second precursor, the second. precursor selected to be reactive with the first precursor;

depositing a substantially conforming layer comprising the first precursor onto the nanocrystal semiconductor;

reacting the second precursor with the first precursor of the substantially conforming layer to form a nanocomposite structure comprising a nanocrystal semiconductor having an inorganic surface layer.

18. The method of claim 17, further comprising heating the nanocomposite structure to affect a reversible alteration of at least one of an electrical and an optical property of the nanocomposite structure.

19. The method of claim 17, wherein the inorganic surface layer comprises at least one of a metal oxide, a metal sulfide, a mixed metal compound, and combinations thereof.

20. The method of claim 19, wherein the metal oxide comprises ZnO, and wherein the nanocrystal semiconductor comprises CdSe.