SEMICONDUCTOR DEVICES INCLUDING SCHOTTKY DIODES HAVING DOPED REGIONS ARRANGED AS ISLANDS AND METHODS OF FABRICATING SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined;
a plurality of spaced apart first doped regions arranged within the active region, the plurality of first doped regions having a second conductivity type that is opposite the first conductivity type, having a first dopant concentration, and defining a plurality of exposed portions of the semiconductor layer within the active region, wherein the plurality of first doped regions are arranged as islands in the semiconductor layer; and
a second doped region in the semiconductor layer, the second doped region having the second conductivity type and having a second dopant concentration that is greater than the first dopant concentration.
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Abstract
A semiconductor device according to some embodiments includes a semiconductor layer having a first conductivity type and a surface in which an active region of the semiconductor device is defined. A plurality of spaced apart first doped regions are arranged within the active region. The plurality of first doped regions have a second conductivity type that is opposite the first conductivity type, have a first dopant concentration, and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of first doped regions are arranged as islands in the semiconductor layer. A second doped region in the semiconductor layer has the second conductivity type and has a second dopant concentration that is greater than the first dopant concentration.
109 Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined; a plurality of spaced apart first doped regions arranged within the active region, the plurality of first doped regions having a second conductivity type that is opposite the first conductivity type, having a first dopant concentration, and defining a plurality of exposed portions of the semiconductor layer within the active region, wherein the plurality of first doped regions are arranged as islands in the semiconductor layer; and a second doped region in the semiconductor layer, the second doped region having the second conductivity type and having a second dopant concentration that is greater than the first dopant concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor layer having a first conductivity type; a metal contact on the semiconductor layer and forming a Schottky junction with the semiconductor layer; a semiconductor region in the semiconductor layer and having a second conductivity type, opposite the first conductivity type, and comprising a plurality of first doped regions arranged as islands in the semiconductor layer; wherein the first doped regions and the semiconductor layer form respective p-n junctions in parallel with the Schottky junction; wherein the p-n junctions are configured to generate a depletion region in the semiconductor layer adjacent the Schottky junction when the Schottky junction is reversed biased to limit reverse leakage current through the Schottky junction; and wherein the p-n junctions are further configured such that punch-through of the p-n junctions occurs at a lower voltage than a breakdown voltage of the Schottky junction.
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15. A method of forming a semiconductor device, comprising:
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forming a plurality of first doped regions in a semiconductor layer, wherein the semiconductor layer has a first conductivity type and the first doped regions have a second conductivity type opposite the first conductivity type such that the semiconductor layer and the first doped regions form respective p-n junctions, wherein the plurality of first doped regions are arranged as islands in the semiconductor layer; and forming a metal layer on the semiconductor layer, the metal layer forming a Schottky junction with the semiconductor layer and contacting the first doped regions; wherein the first doped region have a thickness and dopant concentration such that punch-through of the p-n junctions occurs at a lower voltage than a breakdown voltage of the Schottky junction between the metal layer and the semiconductor layer when the Schottky junction is reversed biased. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification