INTEGRATED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
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Abstract
An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source, exhibiting excellent in-plane uniformity in an emission intensity is provided. The light-emitting-device comprising a plurality of light-emitting-units formed over a substrate, wherein the light-emitting-unit has a compound semiconductor thin-film crystal layer 24, 25, 26 a first and a second-conductivity-type-side electrode 27, 28; a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrode are formed on the opposite side to the light-extraction direction; the light-emitting-units are electrically separated each other by a light-emitting-unit separation-trench which is formed by removing the thin-film crystal layer from the surface to an inside portion of the buffer layer.
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Citations
75 Claims
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1-47. -47. (canceled)
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48. An integrated compound semiconductor light-emitting-device, comprising:
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a substrate transparent to an emission wavelength and a plurality of light-emitting-units formed on the substrate, wherein the light-emitting-unit comprises a compound semiconductor thin-film crystal layer having a first-conductivity-type semiconductor layer containing a first-conductivity-type cladding layer, an active layer structure and a second-conductivity-type semiconductor layer containing a second-conductivity-type cladding layer;
a second-conductivity-type-side electrode; and
a first-conductivity-type-side electrode on the substrate;a main light-extraction direction is the side of the substrate, and the first-conductivity-type-side electrode and the second-conductivity-type-side electrode are formed on the opposite side to the main light-extraction direction; the light-emitting-device comprises a buffer layer formed between the substrate and the first-conductivity-type semiconductor layer;
the buffer layer being common to the plurality of light-emitting-units;the light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench formed between adjacent light-emitting-units and formed by removing the thin-film crystal layer from the surface to the boundary of the buffer layer or to an inside portion of the buffer layer between the adjacent light-emitting-units; and the light-emitting-unit comprises; (A) single light-emitting-point comprising the active layer structure, the second-conductivity-type semiconductor layer and the second-conductivity-type-side electrode; and
the first-conductivity-type-side electrode, or(B) a plurality of light-emitting-point comprising the active layer structure, the second-conductivity-type semiconductor layer and the second-conductivity-type-side electrode; and
at least one first-conductivity-type-side electrode;
wherein the first-conductivity-type semiconductor layer provides electrical connection in the single light-emitting-unit. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55)
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56. An integrated compound semiconductor light-emitting-device, comprising:
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a plurality of light-emitting-units, wherein the light-emitting-unit comprises a compound semiconductor thin-film crystal layer having a first-conductivity-type semiconductor layer containing a first-conductivity-type cladding layer, an active layer structure and a second-conductivity-type semiconductor layer containing a second-conductivity-type cladding layer;
a second-conductivity-type-side electrode; and
a first-conductivity-type-side electrode;a main light-extraction direction is the side of the first-conductivity-type semiconductor layer in relation to the active layer structure, and the first-conductivity-type-side electrode and the second-conductivity-type-side electrode are formed on the opposite side to the main light-extraction direction; the light-emitting-device comprises a buffer layer formed at the main light-extraction direction side of the first-conductivity-type semiconductor layer;
the buffer layer being common to the plurality of light-emitting-units; andthe light-emitting-units are electrically separated each other by a light-emitting-unit separation-trench formed between adjacent light-emitting-units and formed by removing the thin-film crystal layer from the surface to the boundary of the buffer layer or to an inside portion of the buffer layer between the adjacent light-emitting-units; and the light-emitting-unit comprises; (A) single light-emitting-point comprising the active layer structure, the second-conductivity-type semiconductor layer and the second-conductivity-type-side electrode; and
the first-conductivity-type-side electrode, or(B) a plurality of light-emitting-point comprising the active layer structure, the second-conductivity-type semiconductor layer and the second-conductivity-type-side electrode; and
at least one first-conductivity-type-side electrode;
wherein the first-conductivity-type semiconductor layer provides electrical connection in the single light-emitting-unit. - View Dependent Claims (57, 58, 59, 60, 61, 62, 63)
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64. A process for manufacturing an integrated compound semiconductor light-emitting-device having a plurality of light-emitting-units on a substrate, the process comprising:
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depositing a buffer layer on a substrate transparent to an emission wavelength; depositing a thin-film crystal layer having at least a first-conductivity-type semiconductor layer containing a first-conductivity-type cladding layer, an active layer structure and a second-conductivity-type semiconductor layer containing a second-conductivity-type cladding layer; forming a second-conductivity-type-side electrode on the surface of the second-conductivity-type semiconductor layer; a first etching exposing a part of the first-conductivity-type semiconductor layer;
wherein;(A) the first etching is also for formation of single light-emitting-point which comprises the active layer structure, the second-conductivity-type semiconductor layer and the second-conductivity-type-side electrode in each light-emitting-unit, or (B) the first etching comprises also dividing the active layer structure and the second-conductivity-type semiconductor layer into a plurality of regions, for formation of the plurality of light-emitting-point in each light-emitting-unit; forming a first-conductivity-type-side electrode on the surface of the first-conductivity-type semiconductor layer exposed by the first etching; a second etching of removing the thin-film crystal layer from the surface to the boundary of the buffer layer or from the surface to an inside portion of the buffer layer for forming a light-emitting-unit separation-trench to separate electrically the light-emitting-unit from each other; and a third etching of removing at least the first-conductivity-type semiconductor layer, the active layer structure and the second-conductivity-type semiconductor layer for forming a light-emitting-device separation-trench to separate into a plurality of light-emitting-devices. - View Dependent Claims (65, 66, 67, 68, 69)
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70. A process for manufacturing an integrated compound semiconductor light-emitting-device having a plurality of light-emitting-units on a support, the process comprising:
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depositing a buffer layer on a substrate; depositing a thin-film crystal layer having at least a first-conductivity-type semiconductor layer containing a first-conductivity-type cladding layer, an active layer structure and a second-conductivity-type semiconductor layer containing a second-conductivity-type cladding layer; forming a second-conductivity-type-side electrode on the surface of the second-conductivity-type semiconductor layer; a first etching exposing a part of the first-conductivity-type semiconductor layer;
wherein;(A) the first etching is also for formation of single light-emitting-point which comprises the active layer structure, the second-conductivity-type semiconductor layer and the second-conductivity-type-side electrode in each light-emitting-unit, or (B) the first etching comprises also dividing the active layer structure and the second-conductivity-type semiconductor layer into a plurality of regions, for formation of the plurality of light-emitting-point in each light-emitting-unit; forming a first-conductivity-type-side electrode on the surface of the first-conductivity-type semiconductor layer exposed by the first etching; a second etching of removing the thin-film crystal layer from the surface to the boundary of the buffer layer or from the surface to an inside portion of the buffer layer for forming a light-emitting-unit separation-trench to separate electrically the light-emitting-unit from each other; a third etching of removing at least the first-conductivity-type semiconductor layer, the active layer structure and the second-conductivity-type semiconductor layer for forming a light-emitting-device separation-trench to separate into a plurality of light-emitting-devices; and removing the substrate. - View Dependent Claims (71, 72, 73, 74, 75)
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Specification