Light emitting elements, light emitting devices including light emitting elements and methods of manufacturing such light emitting elements and/or devices

• US 20090315054A1
• Filed: 06/03/2009
• Published: 12/24/2009
• Est. Priority Date: 06/24/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Seung-Jae, Kim, Yu-Sik
• Granted Patent: US 8,476,666 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/10158 at the passive surface
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Abstract

An emitting device including a first electrode, a second electrode spaced apart from the first electrode, an emitting pattern including a portion between the first electrode and the second electrode, and a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.

Claims

1. An emitting device, comprising:

a first electrode;

a second electrode spaced apart from the first electrode;

an emitting pattern including a portion between the first electrode and the second electrode; and

a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.

2. The emitting device as claimed in claim 1, wherein the first electrode includes a first portion extending substantially along a first direction and a second portion extending substantially along a second direction, the first direction crossing the second direction.

3. The emitting device as claimed in claim 1, wherein the first electrode includes two protruding portions defining a cavity and an upper portion of the cavity is wider than a lower portion of the cavity.

4. The emitting device as claimed in claim 1, wherein the first electrode includes a plurality of protrusions defining a light emitting region and a non-light emitting region, and the second electrode overlaps the non-light emitting region of the emitting device.

5. The emitting device as claimed in claim 1, wherein the block pattern includes an insulating material.

6. The emitting device as claimed in claim 1, wherein the block pattern includes an oxide layer, a nitride layer, an oxide-nitride layer, an aluminum-oxide layer and/or an aluminum-nitride layer.

7. The emitting device as claimed in claim 1, wherein at least a portion of the block pattern is directly on the first electrode.

8. The emitting device as claimed in claim 1, wherein the first electrode is substantially and/or completely flat.

9. The emitting device as claimed in claim 1, wherein the block pattern includes a first block pattern and a second block pattern.

10. The emitting device as claimed in claim 9, wherein the first block pattern and the second block pattern are each one of a line pattern, a mesh pattern and a dot pattern.

11. The emitting device as claimed in claim 9, wherein the first block pattern and the second block pattern are arranged offset relative to each other such that at least a portion of the first block pattern overlaps a space defined by the second block pattern and a portion of the second block pattern overlaps a space defined by the first block pattern.

12. The emitting device as claimed in claim 9, wherein a pattern of the first block pattern is complementary to a pattern of the second block pattern.

13. The emitting device as claimed in claim 9, wherein at least a portion of the first block pattern is between the emitting pattern and the first electrode and/or on a same level as the first electrode and at least a portion of the second block pattern is between the emitting pattern and the second electrode and/or on a same level as the second electrode.

14. The emitting device as claimed in claim 1, further comprising a first conductive pattern below the emitting pattern and a second conductive pattern above the emitting pattern.

15. The emitting device as claimed in claim 14, wherein the first conductive pattern, the emitting pattern and/or the second conductive pattern each includes In_xAl_yGa_(1-x-y)N, where 0≦

x≦

1 and 0≦

y≦

1.

16. The emitting device as claimed in claim 14, wherein the first electrode is arranged such that a portion of the first conductive pattern is at a level higher than a level of the first electrode and another portion of the first conductive pattern is at a level lower than the level of the first electrode.

17. The emitting device as claimed in claim 14, wherein at least one portion of the first electrode is on a same level as a respective portion of the emitting pattern and/or the block pattern.

18. The emitting device as claimed in claim 14, wherein at least a portion of the block pattern is aligned with and/or embedded within a portion of the second conductive pattern.

19. The emitting device as claimed in claim 14, wherein at least a portion of the block pattern is aligned with and/or embedded within a portion of the first conductive pattern.

20. The emitting device as claimed in claim 1, further comprising an ohmic pattern arranged between at least one of the first electrode and the emitting pattern and/or the second electrode and the emitting pattern.

21. The emitting device as claimed in claim 20, wherein the ohmic pattern includes a pattern that is complementary to at least a portion of the block pattern and is arranged on a same level as the complementary portion of the block pattern.

22. The emitting device as claimed in claim 20, wherein the ohmic pattern includes a first ohmic pattern between the first electrode and the emitting pattern and a second ohmic pattern between the emitting pattern and the second electrode.

23. The emitting device as claimed in claim 1, wherein the block pattern includes a protrusion.

24. The emitting device as claimed in claim 1, further comprising a buffer layer between the second electrode and the block pattern.

25. The emitting device as claimed in claim 24, wherein the buffer layer includes In_xAl_yG_(1-x-y) and/or Si_xC_yN_(1-x-y), where 0≦

x≦

1 and 0≦

y≦

1.

26. The emitting device as claimed in claim 1, wherein the first electrode includes a reflective material.

27. A light emitting apparatus including the light emitting device as claimed in claim 1, the light emitting apparatus further including:

a first conductive region on a base substrate electrically connected to the first electrode; and

a second conductive region on the base substrate electrically connected to the second electrode.

28. The light emitting apparatus as claimed in claim 27, wherein the light emitting apparatus is a liquid crystal display back light unit, a projector or a lamp.

29. The light emitting apparatus as claimed in claim 27, wherein the first electrode is electrically connected to the first conductive region through a conductive substrate on which the first electrode is arranged, and the second electrode is electrically connected to the second conductive region with a wire.

30. The light emitting apparatus as claimed in claim 27, wherein the first electrode and the second electrode are electrically connected to the first conductive region and the second conductive region, respectively, with a conductive resin.

31. The light emitting apparatus as claimed in claim 27, wherein the first conductive region and the second conductive region are on a first side of the base substrate, and the light emitting apparatus further comprises:

a third conductive region on a second side of the base substrate,

a fourth conductive region on the second side of the base substrate,

at least one via connecting the first conductive region to the third conductive region, and

at least one via connecting the second conductive region to the fourth conductive region.

32. The light emitting apparatus as claimed in claim 27, further comprising a phosphor layer on the light emitting device.

33. The light emitting apparatus as claimed in claim 32, wherein the phosphor layer includes a transparent resin, wherein phosphor is dispersed within the transparent resin, on the transparent resin and/or between the transparent resin and the light emitting device.

34. The light emitting apparatus as claimed in claim 26, wherein the light emitting apparatus includes a plurality of the light emitting devices, and the phosphor layer is arranged in a line-type and/or dot-type manner on the light emitting devices.

35. An emitting device, comprising:

a first electrode on a conductive substrate;

a second electrode on the first electrode;

an emitting pattern including a portion between the first electrode and the second electrode; and

current regulating means for regulating current flow through the emitting pattern, wherein at least a portion of the current regulating means is arranged along a current path between the first electrode and the emitting pattern such that all current flowing from the first electrode to the emitting pattern passes through at least a portion of the current regulating means before reaching the emitting pattern.

36. The emitting device as claimed in claim 35, wherein the current regulating means includes a first regulating pattern arranged between the first electrode and the emitting pattern and/or on a same level as the first electrode.

37. The emitting device as claimed in claim 35, wherein the current regulating means includes an insulator.

38. The emitting device as claimed in claim 35, further comprising a conductive pattern on the emitting pattern and buffering means for protecting the current regulating means and/or for seeding a conductive pattern on the emitting pattern.

39. A method of fabricating an emitting device, comprising:

forming a block pattern on a substrate;

forming a conductive pattern on the substrate;

forming an emitting pattern on the substrate;

forming another conductive pattern on the substrate;

forming a first electrode substantially and/or completely on a first side of the emitting pattern; and

forming a second electrode substantially and/or completely on a second side of the emitting pattern, the first side being different from the second side of the emitting pattern, wherein the block pattern includes a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode.

40. The method as claimed in claim 39, further comprising:

forming another block pattern on the substrate, wherein the another block pattern includes a portion between the emitting pattern and the second electrode and/or on a same level as the second electrode.

41. The method as claimed in claim 40, wherein forming the conductive pattern at least partially occurs before forming the block pattern and the block pattern is formed on at least a portion of the conductive pattern on the substrate.

42. The method as claimed in claim 41, further comprising forming a buffer layer on at least one of the another block pattern and the another conductive pattern, and forming an ohmic layer on the buffer layer, wherein forming the second electrode includes forming the second electrode on the ohmic layer.

43. The method as claimed in claim 40, wherein forming the another block pattern occurs before forming the another conductive pattern and forming the block pattern, the another conductive pattern being formed on the another block pattern and the block pattern being formed on the emitting pattern and the another conductive pattern.

44. The method as claimed in claim 43, wherein the substrate is a temporary substrate and the method further includes connecting, electrically, the first electrode to a conductive substrate and removing the temporary substrate, and wherein forming the second electrode occurs after removing the temporary substrate and includes forming the second electrode on the another conductive pattern, the second electrode being formed on a side of the another conductive pattern that faced the temporary substrate before it was removed.

45. The method as claimed in claim 44, further comprising:

successively forming a sacrificial layer and a buffer layer on the temporary substrate before forming the another block pattern; and

after removing the temporary substrate and the sacrificial layer, forming an ohmic layer on the buffer layer and forming the second electrode on the another ohmic layer.

46. The method as claimed in claim 43, wherein forming the another conductive pattern, forming the emitting pattern and forming the conductive pattern include:

successively forming an another conductive layer, an emitting layer and a conductive layer on the another block pattern, and

selectively etching the conductive layer, the emitting layer and the another conductive layer to respectively form the conductive pattern, the emitting pattern and the another conductive, wherein the conductive pattern, the emitting pattern and the another conductive pattern form an emitting structure of an intermediate structure.

47. The method as claimed in claim 46, wherein forming the block pattern includes forming a block layer on exposed portions of the emitting structure and selectively patterning the block layer to form the block pattern to expose portions of the conductive pattern and the method further includes forming an ohmic pattern at least on exposed portions of the conductive pattern.

48. The method as claimed in claim 46, wherein forming the emitting structure includes removing respective portions of the conductive layer, the another conductive layer and the emitting layer to form trenches in the intermediate structure.

49. The method as claimed in claim 40, wherein forming the block pattern and forming the another block pattern include forming and patterning a blocking insulating layer and another blocking insulating layer, respectively, in a line-type, dot-type and/or mesh-type manner.