PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GaN-BASED LIGHT EMITTING DIODES
First Claim
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1. A light emitting diode (LED), comprising:
- (a) a p-type III-nitride layer having a surface which is roughened for extracting light emitted by the LED;
(b) an n-type III-nitride layer; and
(c) an active layer for emitting the light, between the p-type III-nitride layer and the n-type III-nitride layers.
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Abstract
A method for photoelectrochemical (PEC) etching of a p-type gallium nitride (GaN) layer of a heterostructure, comprising using an internal bias in a semiconductor structure to prevent electrons from reaching a surface of the p-type layer, and to promote holes reaching the surface of the p-type layer, wherein the semiconductor structure includes the p-type layer, an active layer for absorbing PEC illumination, and an n-type layer.
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Citations
22 Claims
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1. A light emitting diode (LED), comprising:
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(a) a p-type III-nitride layer having a surface which is roughened for extracting light emitted by the LED; (b) an n-type III-nitride layer; and (c) an active layer for emitting the light, between the p-type III-nitride layer and the n-type III-nitride layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for fabricating a III-nitride based light emitting diode (LED), comprising:
roughening a p-type surface of the III-nitride based light emitting LED, wherein the roughening comprises photoelectrochemically etching the p-type surface and the roughening is suitable to extract light from the LED.
- 20. A light emitting diode (LED), comprising a roughened surface of a p-type layer, wherein the roughened surface scatters light incident on the roughened surface into an external medium, wherein the light is incident from a light-emitting active layer of the LED.
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22. A method for extracting light from a light emitting diode, comprising extracting the light from a roughened surface of a p-type III-nitride layer.
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