NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20090315058A1
• Filed: 08/25/2009
• Published: 12/24/2009
• Est. Priority Date: 10/27/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Song, Ho Young, LEE, Jin Bock
• Application Number:
  US12/546,896
• Publication Number:
  US 20090315058A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

There are provided a nitride semiconductor light emitting device and a method of manufacturing the same, the device including: a first conductivity type nitride semiconductor layer formed on a substrate; an active layer formed on the first conductivity type nitride semiconductor layer; a second conductivity type nitride semiconductor layer formed on the active layer; a light-transmitting low refractive index layer formed on the second conductivity type nitride semiconductor layer, the light-transmitting low refractive index layer having a plurality of openings through which the second conductivity type nitride semiconductor layer is partially exposed and formed of a material having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer; and a high conductivity ohmic contact layer formed on the light-transmitting low refractive index layer and connected to the second conductivity type nitride semiconductor layer through the openings of the light-transmitting low refractive index layer.

Claims

1-10. -10. (canceled)

11. A nitride semiconductor light emitting device comprising:

a first conductivity type nitride semiconductor layer formed on a substrate;

an active layer formed on the first conductivity type nitride semiconductor layer;

a second conductivity type nitride semiconductor layer formed on the active layer;

a high reflectivity ohmic contact layer formed on the second conductivity type nitride semiconductor layer; and

a plurality of vacant structures having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer, and formed at least one of inside the second conductivity type nitride semiconductor layer and between the high reflectivity ohmic contact layer and the second conductivity type nitride semiconductor layer.

12. The device of claim 11, wherein the plurality of vacant structures are formed in an area between the high reflectivity ohmic contact layer and the second conductivity type nitride semiconductor layer.

13. The device of claim 12, further comprising a conductive material layer formed on the second conductivity type nitride semiconductor layer, between the high reflectivity ohmic contact layer and the second conductivity type nitride semiconductor layer, and having a plurality of openings,

wherein the plurality of openings are provided as the plurality of vacant structures by the high reflectivity ohmic contact layer formed on the conductive material layer.

14. The device of claim 11, wherein the plurality of vacant structures are formed inside the second conductivity type nitride semiconductor layer.

15. The device of claim 14, wherein the plurality of vacant structures are obtained by forming a plurality of pits in a lower region of the second conductivity type nitride semiconductor layer and re-growing an upper region of the second conductivity type semiconductor layer such that the pits are retained as the vacant structures.

16. The device of claim 11, wherein the high reflectivity ohmic contact layer is formed of a material selected from a group consisting of Ag, Ni, Al, Ph, Pd, Ir, Ru, Mg, Zn, Pt, Au and a combination thereof.

17. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:

forming a first conductivity nitride semiconductor layer on a substrate;

forming an active layer on the first conductivity type nitride semiconductor layer;

forming a second conductivity type nitride semiconductor layer formed on the active layer;

forming a high reflectivity ohmic contact layer on the second conductivity nitride semiconductor layer; and

forming a plurality of vacant structures at least one of inside the second conductivity type nitride semiconductor layer and between the high reflectivity ohmic contact layer and the second conductivity type nitride semiconductor layer.

18. The method of claim 17, wherein the forming a plurality of vacant structures comprises forming the plurality of vacant structures in an area between the high reflectivity ohmic contact layer and the second conductivity type nitride semiconductor layer.

19. The method of claim 18, wherein the forming a plurality of vacant structures comprises:

forming a conductive material layer having a plurality of openings on the second conductivity type nitride semiconductor layer; and

forming the high reflectivity ohmic contact layer on the conductive material layer to retain the plurality of openings as the vacant structures.

20. The method of claim 17, wherein the forming a plurality of vacant structures comprises forming a plurality of vacant structures inside the second conductivity type nitride semiconductor layer.

21. The method of claim 20, wherein the forming a plurality of vacant structures comprises:

growing a lower region of the second conductivity type nitride semiconductor layer;

forming a plurality of pits in the lower region of the second conductivity type nitride semiconductor layer; and

re-growing an upper region of the second conductivity type nitride semiconductor layer on the lower region of the second conductivity type nitride semiconductor layer such that the pits are retained as vacant structures.

22. The method of claim 21, wherein the high reflectivity ohmic contact layer is formed of a material selected from a group consisting of Ag, Ni, Al, Ph, Pd, Ir, Ru, Mg, Zn, Pt, Au and a combination thereof.