LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20090315063A1
• Filed: 10/15/2008
• Published: 12/24/2009
• Est. Priority Date: 06/19/2008
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Yoon, Yeo Jin, Kim, Chang Yeon
• Granted Patent: US 8,390,002 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Claims

1. A light emitting device, comprising:

a substrate;

an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate;

one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers;

a first insulating layer formed on sidewalls of the trenches; and

a conductive layer filled in the trenches having the first insulating layer formed therein.

2. The light emitting device as claimed in claim 1, further comprising:

a transparent electrode formed on the P-type semiconductor layer;

a first electrode electrically connected to the conductive layer and formed on the N-type semiconductor layer; and

a second electrode formed on the transparent electrode.

3. The light emitting device as claimed in claim 2, wherein at least a portion of the transparent electrode is removed so that at least a portion of the P-type semiconductor layer is exposed, and the second electrode is formed to be in contact with the exposed P-type electrode.

4. The light emitting device as claimed in claim 2, wherein the trenches are formed to have a mesh structure.

5. The light emitting device as claimed in claim 2, further comprising a second insulating layer formed between the conductive layer and the transparent electrode.

6. The light emitting device as claimed in claim 1, wherein the trenches have an interval wider than a width.

7. A method of manufacturing a light emitting device, comprising:

sequentially forming an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate;

etching the P-type semiconductor and active layers, thereby forming a trench of a mesh structure to expose the N-type semiconductor layer; and

forming a conductive layer to be filled in the trench.

8. The method as claimed in claim 7, wherein a hole is further formed to expose the N-type semiconductor layer together with the trench of a mesh structure.

9. The method as claimed in claim 8, further comprising forming a first electrode on the N-type semiconductor layer in the hole.

10. The method as claimed in claim 7, after forming the conductive layer, further comprising forming a second insulating layer on the conductive layer.

11. The method as claimed in claim 10, after forming the second insulating layer, further comprising:

forming a transparent electrode on the P-type semiconductor layer; and

forming a second electrode on the transparent electrode.

12. The method as claimed in claim 11, before forming the second electrode, further comprising removing at least a portion of the transparent electrode so that a portion of the P-type semiconductor layer is exposed before forming the second electrode, wherein the second electrode is formed to be in contact with the exposed P-type semiconductor layer.