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ATOMIC LAYER DEPOSITION OF METAL CARBIDE FILMS USING ALUMINUM HYDROCARBON COMPOUNDS

  • US 20090315093A1
  • Filed: 04/15/2009
  • Published: 12/24/2009
  • Est. Priority Date: 04/16/2008
  • Status: Abandoned Application
First Claim
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1. An atomic layer deposition process for forming a metal carbide thin film on a substrate in a reaction space, comprising:

  • alternately and sequentially contacting the substrate with vapor phase pulses of a first metal precursor and a first aluminum hydrocarbon compound, such that a metal carbide film comprising from about 6 to about 16% aluminum is formed.

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