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INTEGRATED TRENCH MOSFET AND JUNCTION BARRIER SCHOTTKY RECTIFIER WITH TRENCH CONTACT STRUCTURES

  • US 20090315107A1
  • Filed: 06/23/2008
  • Published: 12/24/2009
  • Est. Priority Date: 06/23/2008
  • Status: Active Grant
First Claim
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1. An Integrated Circuit having a plurality of trench MOSFET and a plurality of Junction Barrier Schottky rectifier comprising:

  • a substrate of the first conductivity type;

    an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower doping than said substrate;

    a trenched MOSFET comprising a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate, wherein said trench MOSFET further comprising;

    an insulation layer covering said integrity circuit with a source-body contact trench opened there through said source and extended into body regions and filled with contact metal plug therein, wherein a gate oxide lining said trench gate and a doped polysilicon within said trenches and overlying the gate oxide. anda junction barrier Schottky rectifier extending into said epitaxial layer and having a barrier layer lined in trench contact filled with contact metal plug and between a pair of adjacent P-bodies.

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