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SEMICONDUCTOR MEMORY APPARATUS HAVING A SUB-WORD LINE DRIVER FOR INCREASING AN AREA MARGIN IN THE MEMORY CORE AREA

  • US 20090316513A1
  • Filed: 12/29/2008
  • Published: 12/24/2009
  • Est. Priority Date: 06/24/2008
  • Status: Active Grant
First Claim
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1. A semiconductor memory apparatus comprising:

  • a sub-word line driver configured to operate in response to an activation of a main word line and in response to positive and negative sub-word line enable signals,wherein the sub-word line driver includes;

    a pull-up driver configured to pull-up drive a first sub-word line to a potential level of the positive sub-word line enable signal in response to the activation of the main word line; and

    a pull-down driver configured to pull-down drive the first sub-word line in response to the negative sub-word line enable signal.

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