Method for Manufacturing Memory Element

• US 20090317968A1
• Filed: 06/16/2009
• Published: 12/24/2009
• Est. Priority Date: 06/20/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nagata, Takaaki
• Granted Patent: US 8,067,316 B2
• Time in Patent Office: Days
• US Class Current: 438/600
• CPC Class Codes: H01L 27/101 including resistors or capacitors only
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing

Abstract

A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.

Claims

1. A method for manufacturing a memory element, comprising the steps of:

forming a first conductor;

placing a conductive paste over the first conductor, the conductive paste comprising conductive particles each of which has a size of greater than or equal to 0.1 μ

m and less than or equal to 10 μ

m, a resin, and a solvent; and

vaporizing the solvent to form a second conductor, the second conductor comprising the conductive particles and a memory layer including the resin between the first conductor and the conductive particles.

2. The method for manufacturing a memory element according to claim 1,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

3. The method for manufacturing a memory element according to claim 1,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

4. The method for manufacturing a memory element according to claim 1,

wherein the conductive particles are silver particles.

5. The method for manufacturing a memory element according to claim 1,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, a urea resin, an acrylic resin or a cellulose resin.

6. The method for manufacturing a memory element according to claim 1 further comprising the step of forming an insulating layer over the first conductor before placing the conductive paste.

7. The method for manufacturing a memory element according to claim 6,

wherein the insulating layer is formed using an insulating inorganic compound or an insulating organic compound.

8. The method for manufacturing a memory element according to claim 6,

wherein the insulating layer is formed using an insulating organic compound by a printing method, a spin coating method or a droplet discharge method.

9. The method for manufacturing a memory element according to claim 1 further comprising the step of forming an inorganic semiconductor layer over the first conductor before placing the conductive paste.

10. A method for manufacturing a memory element, comprising the steps of:

placing a conductive paste so as to fill up a space between a first conductor and a second conductor, the conductive paste comprising conductive particles each of which has a size of greater than or equal to 0.1 μ

m and less than or equal to 10 μ

m, a resin, and a solvent; and

vaporizing the solvent to form a memory layer including the resin between the first conductor and the second conductor.

11. The method for manufacturing a memory element according to claim 10,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

12. The method for manufacturing a memory element according to claim 10,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

13. The method for manufacturing a memory element according to claim 10,

wherein the conductive particles are silver particles.

14. The method for manufacturing a memory element according to claim 10,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, a urea resin, an acrylic resin or a cellulose resin.

15. A method for manufacturing a memory element, comprising the steps of:

forming a first conductor;

placing a conductive paste so as to be in contact with a portion of the first conductor, the conductive paste comprising conductive particles each of which has a size of greater than or equal to 0.1 μ

m and less than or equal to 10 μ

m, a resin, and a solvent; and

vaporizing the solvent to form a second conductor so as to overlap with the portion of the first conductor, the second conductor comprising the conductive particles and a memory layer including the resin between the first conductor and the conductive particles.

16. The method for manufacturing a memory element according to claim 15,

wherein the conductive paste is placed by a droplet discharge method or a printing method.

17. The method for manufacturing a memory element according to claim 15,

wherein the solvent is vaporized at a temperature higher than or equal to 10°

C. and less than or equal to 280°

C.

18. The method for manufacturing a memory element according to claim 15,

wherein the conductive particles are silver particles.

19. The method for manufacturing a memory element according to claim 15,

wherein the resin is a phenol resin, an epoxy resin, a polyester resin, a silicone resin, a urea resin, an acrylic resin or a cellulose resin.