MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20090317978A1
• Filed: 06/19/2009
• Published: 12/24/2009
• Est. Priority Date: 06/19/2008
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HIGASHI, Kazuyuki
• Application Number:
  US12/487,979
• Publication Number:
  US 20090317978A1
• Time in Patent Office: Days
• US Class Current: 438/703
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/31144 using masks

Abstract

In one aspect of the present invention, a method of manufacturing semiconductor device may include forming a second core on a member to be processed, and a first core on the second core, the second core located below the first core and having a width larger than that of the first core, forming a coating film on a top surface and side surfaces of the first core, and a top surface and side surfaces of the second core, processing the coating film into sidewall masks by partially removing the coating film in a manner that portions of the coating film, which are located on the side surfaces of the first and second cores, are left remaining, etching the first and second cores by using the sidewall masks as a mask so as to remove the first core and portions of the second core which are not covered with the sidewall masks from above, so that an etching mask including the sidewall masks and portions of the second core which remain directly below the sidewall masks is formed, and etching the member by using the etching mask as a mask, so that the member is patterned.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming a second core on a member to be processed, and a first core on the second core, the second core located below the first core and having a width larger than that of the first core;

forming a coating film on a top surface and side surfaces of the first core, and a top surface and side surfaces of the second core;

processing the coating film into sidewall masks by partially removing the coating film in a manner that portions of the coating film, which are located on the side surfaces of the first and second cores, are left remaining;

etching the first and second cores by using the sidewall masks as a mask so as to remove the first core and portions of the second core which are not covered with the sidewall masks from above, so that an etching mask including the sidewall masks and portions of the second core which remain directly below the sidewall masks is formed; and

etching the member by using the etching mask as a mask, so that the member is patterned.

2. The method of claim 1, wherein

the forming the first and second cores includes:

forming a sacrificial layer and a resist on the member, the sacrificial layer made of a first layer and a second layer located below the first layer, the resist located above the sacrificial layer and having a predetermined pattern;

etching the first layer and the second layer by using the resist as a mask, so that the first and second layers are processed respectively into the first and second cores; and

reducing the width of the first core by performing one of a slimming process on the first core and an etching process on the first core by using as a mask the resist subjected to a slimming process.

3. The method of claim 1, wherein

the forming the first and second cores includes:

stacking a second sacrificial film, a third sacrificial film, a first sacrificial film, and a resist having a predetermined pattern sequentially on the member;

etching the first sacrificial film by using the resist as a mask, so that the first sacrificial film is processed into the first core;

processing the third sacrificial film into a tapered shape having slopes on both sides of the first core; and

etching the second sacrificial film by using as a mask the resist and the third sacrificial film having the tapered shape, so that the second sacrificial film is processed into the second core.

4. The method of claim 1, wherein

the forming the first and second cores includes directly embossing material films for the first and second cores by using a template having a three-dimensional concave and convex pattern corresponding to shapes of the first and second cores.

5. The method of claim 1, wherein

the forming the first and second cores includes embossing a resist film formed on the material films by using the template, and then, transferring a resultant shape of the resist film to the material films by etching.

6. A method for manufacturing a semiconductor device, comprising:

forming a plurality of m cores (m is a positive integer) at an arrangement pitch P sequentially on a member to be processed, the m cores having successively increasing widths from the uppermost core;

forming a coating film, so that side surfaces of the respective m cores are covered with the coating film;

processing the coating film into sidewall masks by partially removing the coating film in a manner that portions of the coating film, which are located respectively on the side surfaces of the m cores, are left remaining;

etching the m cores by using the sidewall masks as a mask so as to remove the first core at the top among the m cores and to remove portions, which are not covered with the sidewall masks from above, of the second to m-th cores from the top, thereby forming an etching mask including the sidewall masks and portions, which remain directly below the sidewall masks, of the second to the m-th cores; and

etching the member by using the etching mask as a mask, so that the member is patterned, wherein

the m cores are formed so that the width of the n-th core (n is an integer between 1 and m inclusive) from the top becomes approximately (4n−

3)P/(4m), and

each of the sidewall masks is formed to have a width of approximately P/(4m).

7. The method of claim 6, wherein

the forming the plurality of m cores includes:

forming a sacrificial layer and a resist on the member, the sacrificial layer made of a first layer and a second layer located below the first layer, the resist located above the sacrificial layer and having a predetermined pattern;

etching the first layer and the second layer by using the resist as a mask, so that the first and second layers are processed respectively into the m cores; and

reducing the width of a first core which is provided in top of the m cores, by performing one of a slimming process on the first core and an etching process on the first core by using as a mask the resist subjected to a slimming process.

8. The method of claim 6, wherein

the forming the plurality of m cores includes:

stacking a second sacrificial film, a third sacrificial film, a first sacrificial film, and a resist having a predetermined pattern sequentially on the member;

etching the first sacrificial film by using the resist as a mask, so that the first sacrificial film is processed into a first core which is provided in top of the m cores;

processing the third sacrificial film into a tapered shape having slopes on both sides of the first core; and

etching the second sacrificial film by using as a mask the resist and the third sacrificial film having the tapered shape, so that the second sacrificial film is processed into a second core, which is provided under the first core in the m cores.

9. The method of claim 6, wherein

the forming the plurality of m cores includes directly embossing material films for the m cores by using a template having a three-dimensional concave and convex pattern corresponding to shapes of the m cores.

10. The method of claim 6, wherein

the forming the plurality of m cores includes embossing a resist film formed on the material films by using the template, and then, transferring a resultant shape of the resist film to the material films by etching.