MICROWAVE PLASMA PROCESSING APPARATUS

• US 20090320756A1
• Filed: 06/19/2009
• Published: 12/31/2009
• Est. Priority Date: 06/25/2008
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: TANAKA, KOUJI
• Application Number:
  US12/487,719
• Publication Number:
  US 20090320756A1
• Time in Patent Office: Days
• US Class Current: 118/723.0MW
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32697 Electrostatic control

Abstract

A disclosed microwave plasma processing apparatus includes a process chamber whose inside may be maintained at a reduced pressure; a susceptor that is provided in the process chamber and holds a substrate; a gas supplying portion configured to supply a gas to the process chamber; a microwave generating portion that generates microwaves; a plasma introducing portion that is arranged to oppose the susceptor and introduces the microwaves generated by the microwave generating portion to the process chamber; and a mesh member arranged between the plasma introducing portion and the susceptor.

Claims

1. A microwave plasma processing apparatus comprising:

a process chamber whose inside may be maintained at a reduced pressure;

a susceptor that is provided in the process chamber and holds a substrate;

a gas supplying portion configured to supply a gas to the process chamber;

a microwave generating portion that generates microwaves;

a plasma introducing portion that is arranged to oppose the susceptor and introduces the microwaves generated by the microwave generating portion to the process chamber; and

a mesh member arranged between the plasma introducing portion and the susceptor.

2. The microwave plasma processing apparatus as recited in claim 1, further comprising a temperature adjusting portion that adjusts a temperature of the mesh member.

3. The microwave plasma processing apparatus as recited in claim 1, further comprising an electric power source that applies a voltage to the mesh member.

4. The microwave plasma processing apparatus as recited in claim 1, wherein the gas supplying portion includes

a first gas passage formed inside the gas supplying portion;

plural first gas discharging holes that are in communication with the first gas passage and open in a first direction;

a second gas passage formed inside the gas supplying portion, the second gas passage being separated from the first gas passage; and

plural second gas discharging holes that are in communication with the second gas passage and open in a second direction different from the first direction.

5. The microwave plasma processing apparatus as recited in claim 1, wherein the mesh member is arranged between the gas supplying portion and the susceptor.

6. The microwave plasma processing apparatus as recited in claim 1, wherein the mesh member is arranged between the plasma introducing portion and the gas supplying portion.

7. The microwave plasma processing apparatus as recited in claim 1, wherein the gas supplying portion comprises a first member and a second member,

wherein the first member includes

a first gas passage formed inside the first member;

and

plural first gas discharging holes that are in communication with the first gas passage and open in a first direction, and

wherein the second member includes

a second gas passage formed inside the second member; and

plural second gas discharging holes that are in communication with the second gas passage and open in a second direction different from the first direction.

8. The microwave plasma processing apparatus as recited in claim 7, wherein the first member, the mesh member, and the second member are arranged in this written order in a direction from the plasma introducing portion to the susceptor between the plasma introducing portion and the susceptor.

9. The microwave plasma processing apparatus as recited in claim 7, wherein the mesh member, the first member, and the second member are arranged in this written order in a direction from the plasma introducing portion to the susceptor between the plasma introducing portion and the susceptor.

10. The microwave plasma processing apparatus as recited in claim 7, wherein the first member, the second member, and the mesh member are arranged in this written order in a direction from the plasma introducing portion to the susceptor between the plasma introducing portion and the susceptor.

11. The microwave plasma processing apparatus as recited in claim 1, wherein the mesh member is placed on the susceptor so that the mesh member does not contact the substrate placed on the susceptor.