Arrangement for reflection of heat radiation, process of making same and uses of same

• US 20090320824A1
• Filed: 06/29/2009
• Published: 12/31/2009
• Est. Priority Date: 06/30/2008
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Gabelmann, Torsten, Schmidbauer, Wolfgang, Henn, Christian
• Granted Patent: US 8,573,194 B2
• Time in Patent Office: Days
• US Class Current: 126/500
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 17/3435 comprising a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/366 Low-emissivity or solar control coatings
• CPC Class Codes: C03C 17/3686 the multilayer coating being used for ovens

Abstract

The heat reflecting arrangement with an improved high heat resistance, e.g. 100 hours at 500° C., includes a substrate, a heat reflecting layer (A) on at least one side of the substrate, which contains indium tin oxide (ITO), and a barrier layer (B) that covers the heat reflecting layer (A), which contains a metal oxide and/or a metal nitride. A fireplace or baking oven with a viewing window having this layer system with the heat reflecting layer is also described. In addition a process for providing the heat reflecting arrangement is described.

Claims

1. A heat reflecting arrangement with a high heat resistance up to 500°

C., said heat;

reflecting arrangement comprising

a substrate;

a heat reflecting layer (A) on at least one side of the substrate, which contains indium tin oxide (ITO); and

a barrier layer (B) that covers the heat-reflecting layer (A), which contains at least one metal oxide and/or at least one metal nitride.

2. The heat reflecting arrangement as defined in claim 1, wherein the heat reflecting layer (A) has a thickness of from 100 to 800 nm.

3. The heat reflecting arrangement as defined in claim 1, wherein the heat reflecting layer (A) has a charge density of from 1.0×

10²¹ to 1.7×

10²¹ electrons cm<sup>−

3</sup>.

4. The heat reflecting arrangement as defined in claim 1, which is transparent and wherein the substrate is transparent.

5. The heat reflecting arrangement as defined in claim 1, wherein the heat reflecting layer (A) has a transmission of at least 70% in a visible range.

6. The heat reflecting arrangement as defined in claim 1, wherein electrons in the heat reflecting layer (A) have a mobility of from 25 to 50 cm²/Vs at a temperature of 20°

C.

7. The heat reflecting arrangement as defined in claim 1, wherein the substrate is transparent and is glass and/or glass ceramic.

8. The heat reflecting arrangement as defined in claim 1, wherein the barrier layer (B) comprises silicon dioxide (SiO₂), silicon nitride (Si₃N₄), aluminum oxide (Al₂O₃), TiO₂, SiO_xN_y, ZrO₂, MoO₂ and Nb₂O₅.

9. The heat reflecting arrangement as defined in claim 1, wherein the barrier layer (B) has a thickness in a range of from 50 nm to 400 nm.

10. The heat reflecting arrangement as defined in claim 1, wherein a separating layer (C) is arranged between the substrate and the heat reflecting layer (A) and said separating layer (C) comprises at least one oxide selected from the group consisting of silicon dioxide (SiO₂), silicon nitride (Si₃N₄) and aluminum oxide (Al₂O₃).

11. The heat reflecting arrangement as defined in claim 10, wherein said separating layer (C) has a thickness in a range of from 10 nm to 200 nm.

12. The heat reflecting arrangement as defined in claim 11, wherein said thickness of said separating layer (C) is in a range of from 80 nm to 120 nm.

13. The heat reflecting arrangement as defined in claim 11, wherein said thickness of said separating layer (C) is 100 nm.

18. A fireplace comprising the arrangement as defined in claim 1.

19. A baking oven comprising the arrangement as defined in claim 1.

14. A process for making a heat reflecting arrangement, wherein said heat reflecting arrangement comprises a substrate, a heat reflecting layer (A) on at least one side of the substrate, which contains indium tin oxide (ITO), and a barrier layer (B) that covers the heat-reflecting layer (A), said barrier layer (B) containing at least one metal oxide and/or at least one metal nitride, said process comprising the steps of:

a) applying the heat reflecting layer (A) on the substrate by means of a sputtering process; and

b) after applying the heat reflecting layer (A), applying the barrier layer (B) over the heat reflecting layer.

15. The process as defined in claim 14, wherein the applying of the heat reflecting layer (A) takes place with a target power density of at least 4 to 5 W/cm².

16. The process as defined in claim 14, further comprising applying a separating layer (C) to said substrate prior to applying the heat reflecting layer, and wherein at least one of the barrier layer (B) and the separating layer (C) is applied by means of at least one method selected from the group consisting of sputtering processes, sol-gel processes, vacuum vapor deposition processes, electron beam evaporation processes, ion plating processes and pyrolysis processes.

17. The process as defined in claim 16, wherein the vacuum vapor deposition processes include chemical vapor deposition and physical vapor deposition.